An image sensor includes a plurality of pixels. Each pixel of the plurality of pixels includes at least two photoelectric elements, at least two floating diffusion regions, a lateral overflow integration capacitor coupled with a floating diffusion region and configured to accumulate charges overflowed from a photoelectric element, a reset transistor coupling a floating diffusion region with a power supply voltage, a driving transistor having a gate coupled with a floating diffusion region and configured to operate based on a voltage of the floating diffusion region, a select transistor having a first terminal coupled with the driving transistor and a second terminal coupled with a column line, a deep trench isolation structure disposed between the at least two photoelectric elements, and a doped region doped with N type dopant disposed between a photoelectric element and a floating diffusion region.

Provided is an image sensor including a pixel including a photoelectric device configured to generate photoelectric charges, a charge storage connected to the photoelectric device and configured to store the photoelectric charges, a driving transistor configured to generate a pixel signal based on a voltage from a first node connected to the photoelectric device, a transfer transistor including a vertical transfer gate connected between the first node and a second node, a first region at a first side of the transfer transistor and doped with a first doping concentration, and a second region at a second side of the transfer transistor and doped with a second doping concentration that is different from the first doping concentration, an overflow transistor between the second node and the charge storage element, and a row driver connected to the pixel and configured to control the pixel.

A buried channel that partially covers a reset gate channel of a pixel for a light sensor is disclosed. The buried channel can lower a potential barrier between a photodiode and the reset gate so that charge can be drained from the photodiode region faster during a reset period. This may result in a shorter reset period that can increase the frame rate of a global shutter.

The present technology relates to an imaging device and an electronic apparatus each capable of expanding a dynamic range without lowering a saturation charge quantity of a photodiode. There are provided a photoelectric conversion unit that converts light into charge, multiple storage portions that temporarily store charge, multiple transfer units that transfer charge to the storage portions, and a penetration trench that separates pixels. At least one of the multiple storage portions is a capacitive element. At least one of the multiple storage portions stores charge overflowing from the photoelectric conversion unit. For example, the present technology is applicable to an imaging device for capturing images.

An image sensor includes a pixel array including pixel units and a readout circuit configured to receive a pixel signal from each of the pixel units. Each of the pixel units includes a plurality of sub-pixels separated by a deep trench isolation (DTI) structure, a plurality of floating diffusion regions, and a lateral overflow integration capacitor in which overflowed charges are accumulated, and each of the sub-pixels includes a photodiode. One of the plurality of floating diffusion regions may include partial floating diffusion regions in at least two of the plurality of sub-pixels, and the partial floating diffusion regions have the same potential. One of the plurality of sub-pixels may include a drain region connected to a power supply voltage node, a first transistor adjacent to the drain region, and a doped region between the photodiode and the drain region and doped with an N-type dopant.

The present disclosure relates to a CMOS image sensor having a doped isolation structure separating a photodiode and a pixel device, and an associated method of formation. In some embodiments, the CMOS image sensor has a vertical transfer gate extending vertically from a front-side of a substrate to a first position within the substrate and a photodiode doped region disposed under and extending laterally toward one side of the vertical transfer gate. A doped lateral isolation region disposed along a top surface of the photodiode doped region, and a doped vertical isolation region disposed along a sidewall of the vertical transfer gate. A doped pixel device well is vertically above the doped lateral isolation region and separated from the vertical transfer gate by the doped vertical isolation region. A pixel device is disposed within the doped pixel device well at the front-side of the substrate.

An imaging sensor according to an embodiment includes a pixel (100b) including a first light receiving element (20L) and a second light receiving element (20S) that generate and accumulate photocharges through photoelectric conversion according to received light, and an interpixel capacitance that accumulates photocharges overflowed from the first light receiving element and the second light receiving element during an exposure period. The second light receiving element has a sensitivity to light lower than a sensitivity to light of the first light receiving element.

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

A pixel of an image sensor includes a first photoelectric conversion region, a second photoelectric conversion region, a first floating diffusion region, a second floating diffusion region, a first transfer gate, a second transfer gate disposed, a first pixel transistor and a bridge region. The first pixel transistor includes a first source-drain region, a second source-drain region and a first pixel gate. The first pixel gate is disposed above the semiconductor substrate between the first source-drain region and the second source-drain region, and a pixel power voltage is applied to the second source-drain region. The bridge region is disposed below the second source-drain region to which the pixel power voltage is applied and forming an overflow barrier potential to discharge redundant photo-charges from the first photoelectric conversion region and the second photoelectric conversion region to the second source-drain region.

To prevent a decrease in a saturation charge when a phase difference signal is generated. A pixel includes a plurality of photoelectric conversion sections that is formed on a semiconductor substrate and performs photoelectric conversion of incident light from a subject to generate a charge. An intra-pixel separator separates the plurality of photoelectric conversion sections. An overflow path in the intra-pixel separator transfers charges overflowed in the plurality of photoelectric conversion sections to each other. An overflow gate in the pixel and adjusts a potential of the overflow path. A pixel separator is disposed at a boundary between the pixels. A charge holding section holds the generated charge. A charge transfer section is disposed one-by-one for the plurality of photoelectric conversion sections and transfers the generated charge to the charge holding section. An image signal generating section generates an image signal on the basis of the generated charge.