The present disclosure provides a field effect transistor and a method for manufacturing the same, and a display panel, relating to the field of display technologies. The field effect transistor includes a substrate, an active layer, a source, a drain, a first insulating layer and an oxygenating layer. An orthographic projection of the oxygenating layer on the substrate is overlapped with an orthographic projection of a target region of the active layer on the substrate. Therefore, when the oxygenating layer is prepared, oxygen elements in the process environment can diffuse to the target region of the active layer, to oxygenate the active layer. In this way, oxygen vacancies in the active layer can be reduced, and the uniformity and stability of the active layer is improved, thereby further improving the performance of the field effect transistor.

A semiconductor device includes gate electrodes spaced apart from each other on a lower structure in a horizontal direction parallel to an upper surface of the lower structure, an insulating layer between the gate electrodes, and an anti-oxidation layer between each of the gate electrodes and the insulating layer. The anti-oxidation layer includes a metal carbide.

Disclosed is a semiconductor device which includes a first gate that extends in a first direction, an island gate adjacent to one end of the first gate in the first direction, a second gate that is spaced apart from the first gate in a second direction perpendicular to the first direction and that extends in the first direction, and a contact plug in contact with the island gate and the second gate.