A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited.

A sensor for obtaining downhole data includes a first piezoelectric layer. The sensor also includes a second piezoelectric layer having a trench extending a depth below a surface of the second piezoelectric layer. The sensor also includes an electrode positioned within the trench. The first piezoelectric layer is directly coupled to the second piezoelectric layer.

A linear or rotary step motor for moving an object comprising: one or more beam actuators; and one or more auxiliary actuators. Each beam actuator comprises: (a) a flexible beam; (b) two holders holding the flexible beam from the beam edges; and (c) an actuator for moving the said at least one holder in order to bent the beam toward the object or to pull the beam away from the object. The axillary actuators are connected to the one or more beam actuators. The beam actuators configured to grip or release the object, and the one or more beam actuators perform a movement step to the object by first grip the object by the one or more beam actuators then push the object by activating the auxiliary actuator.

A wafer level ultrasonic device includes a composite layer, a first conductive layer, a second conductive layer, a base, a first electrical connection region, and a second electrical connection region. The composite layer includes an ultrasonic element and a protective layer. The ultrasonic element includes a first electrode and a second electrode. The protective layer has a first connecting channel and a second connecting channel respectively corresponding to the first electrode and the second electrode. The first conductive layer and the second conductive layer are respectively in the first connecting channel and the second connecting channel to connect the first electrode and the second electrode. The base includes an opening forming a closed cavity with the protective layer. The first electrical connection region and the second electrical connection region are respectively filled with metal materials to electrically connect the first conductive layer and the second conductive layer.

A microelectronic device including a substrate including, in a stack, a base portion, a dielectric portion and an upper layer with a semi-conductive material base, at least one electrical connection element made of an electrically conductive material located above the upper layer and electrically insulated from the upper layer at least by a dielectric layer, the dielectric layer being in contact with the surface of the upper layer, at least one dielectric element including at least one trench forming a closed edge at the periphery or upright of at least one portion of the dielectric electrical connection element, located at least partially in the upper layer and delimiting a closed zone of said upper layer, at least one dielectric element having a portion exposed to the surface of the upper layer, device wherein the dielectric layer totally covers the exposed portion of at least one dielectric element.

A piezoelectric device includes: a base having at least one hole, a heat conductive portion disposed in the at least one hole and in contact with a wall of the at least one hole, and at least one piezoelectric sensor disposed on the base. A thermal conductivity of the heat conductive portion is greater than a thermal conductivity of the base. Each piezoelectric sensor includes: a first electrode, a piezoelectric pattern made of a piezoelectric material and a second electrode that are sequentially stacked in a thickness direction of the base.

A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

A vibration detection element (10) includes substrates (1 to 3), a support member (22), a support member (32), and an oscillator (4). The substrates (1 to 3) have a space portion (SP) having a bottom surface (21A) and a bottom surface (31A) opposed to the bottom surface (21A). The support member (22) protrudes from the bottom surface (21A) toward the bottom surface (31A) of the space portion (SP). The support member (32) protrudes from the bottom surface (31A) toward the bottom surface (21A) of the space portion. The oscillator (4) is disposed in contact with the support member (22) or the support member (32) and capable of vibrating in the space portion (SP) and has a thickness less than 10 μm. The support members (22, 32) each include multiple supports which prevent the oscillator (4) from contacting the bottom surface (21A) or the bottom surface (31A).

Embodiments of the invention include a piezo-electric mirror in an microelectronic package and methods of forming the package. According to an embodiment the microelectronic package may include an organic substrate with a cavity formed in the organic substrate. In some embodiments, an actuator is anchored to the organic substrate and extends over the cavity. For example, the actuator may include a first electrode and a piezo-electric layer formed on the first electrode. A second electrode may be formed on the piezo-electric layer. Additionally, a mirror may be formed on the actuator. Embodiments allow for the piezo-electric layer to be formed on an organic package substrate by using low temperature crystallization processes. For example, the piezo-electric layer may be deposited in an amorphous state. Thereafter, a laser annealing process that includes a pulsed laser may be used to crystallize the piezo-electric layer.

A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.