Substrate is produced by using a MEMS technique to form multiple diaphragms in a substrate by forming piezoelectric material layer on one surface of the substrate and thereafter by forming openings in the substrate from the other surface of the substrate; substrate and substrate on which signal detection circuit is formed are aligned to each other using at least one of multiple diaphragms as alignment diaphragm; and substrate and substrate are bonded together.

A thin-film piezoelectric actuator includes: a substrate; a lower electrode laminated on the substrate; a laminated structure configured to be laminated on the lower electrode and including a plurality of thin-film piezoelectric films alternately laminated with an intermediate electrode between; an upper electrode laminated on the laminated structure; a first protective layer configured to be provided on an upper surface of the upper electrode and made of an alloy material containing iron, cobalt, and molybdenum; and a second protective layer configured to be provided at least on an upper surface of an end portion of the intermediate electrode that is not between the thin-film piezoelectric films, and made of an alloy material containing iron, cobalt, and molybdenum. The present invention provides a thin-film piezoelectric actuator that can achieve high performance and can effectively suppress the occurrence of cracks at the end portion of the piezoelectric film in the lower layer.

A bonded body includes a supporting substrate, piezoelectric material substrate and a multilayer film, between the supporting substrate and piezoelectric material substrate. The multilayer film includes a lamination structure having a first layer, second layer, third layer and fourth layer in the order. The first layer and third layer are composed of silicon oxides, and the second layer and fourth layer are composed of metal oxides. The refractive index of the second layer is higher than the refractive index of the first layer and refractive index of the third layer. The refractive index of the second layer is different from the refractive index of the fourth layer.

An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

Energy harvesting device comprising: a first layer (1) of electrically conductive textile fabric material; a second layer (2) of electrically conductive textile fabric material; a layer of piezoelectric polymer film (3) arranged between the first (1) and the second (2) electrically conductive textile layers; wherein the piezoelectric polymer film layer (3) is laminated between the first (1) and second (2) electrically conductive textile layer.

Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.

Electromagnetically transparent conductive materials, in particular nanomaterials, are used in a sensor along with piezoelectric materials to detect the motion of a subject to provide respiratory and cardiac gating for imaging techniques such as MRI, CT scans and PET.

A piezoelectric composite substrate for SAW devices with small loss is provided. A composite substrate for a surface acoustic wave device according to one embodiment of the present invention has a piezoelectric single crystal thin film, a support substrate, and a first intervening layer between the piezoelectric single crystal thin film and the support substrate. In said composite substrate, the first intervening layer is in contact with the piezoelectric single crystal thin film, and the acoustic velocity of the transverse wave in the first intervening layer is faster than the acoustic velocity of the fast transverse wave in the piezoelectric single crystal thin film.

In a piezoelectric device, a piezoelectric driving portion includes layers and is directly or indirectly supported by a base portion. The piezoelectric driving portion includes a piezoelectric layer, an upper electrode layer, and a lower electrode layer. The upper electrode layer is disposed on the upper side of the piezoelectric layer. The lower electrode layer faces at least a portion of the upper electrode layer with the piezoelectric layer interposed therebetween. The piezoelectric driving portion includes a through groove extending through the piezoelectric driving portion in the vertical direction, so that a pair of inner side surfaces are provided. The pair of inner side surfaces each include a first small-width portion in which the width of the through groove decreases in a downward direction from an upper end surface of the piezoelectric layer.

The invention provides a micron-scale monocrystal film. The micron-scale monocrystal film includes 1) a substrate layer, and 2) a micron-scale monocrystal film layer located on the substrate layer, wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer may include a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron monocrystal film layer, wherein the transition layer may include H and an element from at least one kind of plasma gas used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer.