A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.

A process for transferring a useful layer to a carrier substrate including a first surface is provided, the process including the steps of: providing a donor substrate including a first surface, a weakened zone including implanted species, the useful layer, which is bounded by the weakened zone and by the first surface of the donor substrate, and an amorphous zone disposed, in the useful layer, parallel to the weakened zone; assembling, on a side of the first surface of the donor substrate and on a side of the first surface of the carrier substrate, the donor substrate with the carrier substrate by bonding, such that the amorphous zone is at least partially facing at least one cavity that is partially bounded by the first surface of the donor substrate; and splitting the donor substrate along the weakened zone so as to reveal the useful layer.

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

A composite substrate includes a supporting substrate composed of quartz, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an interface layer along a bonding interface between the supporting substrate and the piezoelectric material substrate. The interface layer has amorphous structure and contains constituent components including silicon, oxygen and at least one of tantalum and niobium. The interface layer has concentrations of hydrogen atoms, nitrogen atoms and fluorine atoms of 1×10.sup.18 atoms/cm.sup.3 or higher and 5×10.sup.21 atoms/cm.sup.3 or lower, respectively.

This application provides a piezoelectric component, a piezoelectric apparatus and a method for manufacturing the same, and relates to the field of piezoelectric technologies. In order to solve a problem of a relatively large misalignment between a piezoelectric component and a target transfer position on a glass substrate occurred after the piezoelectric component is transferred in the related transfer methods, and to improve the transfer accuracy of the piezoelectric component. The piezoelectric component includes: a component body and at least one electrode structure arranged on a side of the component body. The at least one electrode structure includes a plurality of strip-shaped electrode pins, and the plurality of electrode pins is arranged at intervals.

Aspects of the disclosure provide a method including determining a measurement configuration for one or more piezoelectric devices in an electronic apparatus. The electronic apparatus includes an electronic device mounted on a substrate block using a bonding layer. The one or more piezoelectric devices including a first subset and a second subset are attached to one of the electronic device and the bonding layer. The method includes performing, based on the measurement configuration, a defect measurement on the electronic apparatus by causing the first subset to transmit and the second subset to receive one or more acoustic signals. The method includes determining whether at least one mechanical defect is located in at least one of (i) the bonding layer, (ii) the electronic device, (iii) the substrate block, (iv) interfaces of the electronic device, the bonding layer, and the substrate block based on the received one or more acoustic signals.

A method for manufacturing an imaging module, including: providing a first substrate and bonding a first dielectric layer on the first substrate; patterning the first dielectric layer to form at least one first bump and at least one second bump which are mutually independent, wherein a region surrounded by the at least one second bump defines a location region of the moved element; providing a piezoelectric element, adhering one end of the piezoelectric element to the first bump through a first adhesion material and making the other end of the piezoelectric element at least partially located above the second bump; adhering the moved element to the second bump through a second adhesion material; and debonding to remove the first substrate.

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. It is provided that at least one of a bonding surface of the supporting substrate and a bonding surface of the piezoelectric material substrate is measured by X-ray reflectivity method and that 1 is assigned to a signal intensity in the case of total reflection. A relative intensity I of a reflected light from the bonding surface is approximated by the following formula (1) in a range of 1.0×10.sup.−4 or larger and 1.0×10.sup.−1 or smaller.

[00001]$\begin{array}{cc}I={a\left(2\theta \right)}^{-b}& \left(1\right)\end{array}$

A composite substrate of the present disclosure is a composite substrate comprising a piezoelectric substrate and a sapphire substrate which are directly bonded, wherein the ratio of the number of oxygen atoms to the number of aluminum atoms in the bonding surface region including the bonding surface of the sapphire substrate bonded to the piezoelectric substrate is less than 1.5. The piezoelectric device of the present disclosure comprises the composite substrate. A method for manufacturing the composite substrate of the present disclosure comprises a step of preparing a piezoelectric substrate and a sapphire substrate, a step of heat-treating the sapphire substrate in a reducing atmosphere or in a vacuum, and a step of directly bonding the piezoelectric substrate to the sapphire substrate.