A semiconductor device including a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region formed on the other side of the channel region; a gate electrode formed on the channel region with a gate insulating film therebetween; and a stress-introducing layer that applies stress to the channel region, the semiconductor device having a stress distribution in which source region-side and drain region-side peaks are positioned between a pn junction boundary of the channel region and the source region and a pn junction boundary of the channel region and the drain region.

A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method includes forming a stacked structure in an active region and at least one shallow trench isolation (STI) structure adjacent to the stacked structure. The method further includes forming a semiconductor layer directly in contact with the at least one STI structure and the stacked structure. The method further includes patterning the semiconductor layer and the stacked structure to form an active device in the active region and a passive structure of the semiconductor layer directly on the at least one STI structure.

A semiconductor device includes a semiconductor-on-insulator substrate having an insulator layer, and at least one silicon germanium (SiGe) fin having a superlattice structure. The SiGe fin is formed on an upper surface of the insulator layer. A gate stack is formed on an upper surface of the at least one silicon germanium fin. The gate stack includes first and second opposing spacers defining a gate length therebetween. First and second epitaxial source/drain structures are formed on the insulator layer. The first and second epitaxial source/drain structures extend beneath the spacer to define a silicon germanium gate channel beneath the gate stack.

A semiconductor device includes a gate dielectric layer over a substrate, a metal layer over the gate dielectric layer, a capping layer over the metal layer, wherein the capping layer includes a plurality of dipole forming elements concentrated at the interface between the metal layer and the capping layer.

A structure includes a substrate and a tunnel field effect transistor (TFET). The TFET includes a source region disposed in the substrate having an overlying source contact, the source region containing first semiconductor material having a first doping type; a drain region disposed in the substrate having an overlying drain contact, the drain region containing second semiconductor material having a second, opposite doping type; and a gate structure that overlies a channel region between the source and the drain. The source region and the drain region are asymmetric with respect to one another such that one contains a larger volume of semiconductor material than the other one. A method is disclosed to fabricate a plurality of the TFETs using a plurality of spaced apart mandrels having spacers. A pair of the mandrels and the associated spacers is processed to form four adjacent TFETs without requiring intervening lithographic processes.

After forming a plurality of first semiconductor fins having a first spacing in a logic device region and a plurality of second semiconductor fins having a second spacing in a memory device region, sacrificial spacers are formed on sidewalls of the plurality of the first semiconductor fins and the plurality of the second semiconductor fins to completely fill spaces between the plurality of first semiconductor fins, but only partially fill spaces between second semiconductor fins. Next, dielectric barrier layer portions are formed in gaps between the sacrificial spacers. After removal of the sacrificial spacers, an entirety of the plurality of first semiconductor fins is laterally enclosed by a corresponding pair of neighboring dielectric barrier layers, while each of the plurality of second semiconductor fins is laterally enclosed by a corresponding pair of neighboring dielectric barrier layer portions.

A semiconductor device and manufacturing method thereof are provided in the present invention. A second opening is formed corresponding to a gate structure after a step of forming a first opening corresponding to an epitaxial layer. After the step of forming the second opening, a pre-amorphization implantation process is performed to form an amorphous region in the epitaxial layer, and the influence of the process of forming the second opening on the amorphous region may be avoided. The semiconductor device formed by the manufacturing method of the present invention includes a contact structure and an alloy layer. The contact structure is disposed in the second opening for being electrically connected to a metal gate. The alloy layer is disposed on the metal gate and disposed between the metal gate and the contact structure. The alloy layer includes an alloy of the material of the metal gate.

A method of fabricating a semiconductor device is disclosed. The method includes forming a fin structure on a substrate; forming a dummy gate over the fin structure; forming spacers on sides of the dummy gate; forming a doped region within the fin structure; replacing the dummy gate with a metal gate; replacing an upper portion of the metal gate with a first dielectric layer; forming a conductive layer directly on the doped region; replacing an upper portion of the conductive layer with a second dielectric layer; removing the first dielectric layer thereby exposing a sidewall of the spacer; removing an upper portion of the spacer to thereby expose a sidewall of the second dielectric layer; removing at least a portion of the second dielectric layer to form a trench; and forming a conductive plug in the trench.

Process of using a dummy gate as an interconnection and a method of manufacturing the same are disclosed. Embodiments include forming on a semiconductor substrate dummy gate structures at cell boundaries, each dummy gate structure including a set of sidewall spacers and a cap disposed between the sidewall spacers; removing a first sidewall spacer or at least a portion of a first cap on a first side of a first dummy gate structure and forming a first gate contact trench over the first dummy gate structure; and filling the first gate contact trench with a metal to form a first gate contact.

A three dimensional semiconductor memory device includes a vertical channel structure extending in a vertical direction on a substrate; interlayer insulating layers surrounding the vertical channel structure and being stacked in the vertical direction on the substrate, gate electrodes surrounding the vertical channel structure and being disposed between the interlayer insulating layers, corners of the gate electrodes adjacent to the vertical channel structure being rounded, and auxiliary gate insulating patterns disposed between the gate electrodes and the vertical channel structure, wherein a side surface of the auxiliary gate insulating pattern is substantially coplanar with a side surface of the interlayer insulating layer in the vertical direction on the substrate.