Disclosed herein are lateral gate material arrangements for quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; and a gate above the quantum well stack, wherein the gate includes a gate electrode, the gate electrode includes a first material proximate to side faces of the gate and a second material proximate to a center of the gate, and the first material has a different material composition than the second material.

A thin film transistor 101 includes: an active layer 7 that is supported on a substrate 1 and includes a first region 7S, a second region 7D and a channel region 7C located between the first region and the second region; a gate electrode 11 that is arranged so as to overlap with at least the channel region of the active layer 7 with a gate insulating layer 9 therebetween; a source electrode 15s electrically connected to the first region 7S; and a drain electrode 15d electrically connected to the second region 7D, at least the channel region 7C of the active layer 7 having a layered structure that includes a first metal layer m1 arranged on a lower oxide semiconductor layer 71 and containing substantially no oxygen, and an upper oxide semiconductor layer 72 arranged on the first metal layer m1, wherein a thickness of the first metal layer m1 is smaller than a thickness of the lower oxide semiconductor layer 71 or the upper oxide semiconductor 72.

A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

This invention relates to the controlled realization of ordered superstructures of octapod-shaped colloidal nanocrystals, formed either in the liquid phase or on a solid substrate. These structures can be applied in many fields of technology.

A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. Also disclosed is a method of making a film including a layer comprising quantum dots, the method comprising forming a layer comprising quantum dots over a carrier substrate, fixing the layer comprising quantum dots formed over the carrier substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of preparing a device component including a layer comprising quantum dots, the method comprising forming a layer comprising quantum dots over a layer comprising a charge transport material, exposing the layer comprising quantum dots to small molecules and light flux. Devices, device components, and films are also disclosed.

A method for forming a graphene quantum dot product includes adding an organic starting material to a vessel and heating the organic starting material to a temperature within 20 C. of the organic starting material's boiling temperature for a time no longer than ten minutes to form graphene quantum dots. A method for sensing a graphene quantum dot includes forming a graphene quantum dot, exciting the graphene quantum dot with light having a first wavelength, measuring light emitted by the excited graphene quantum dot at a second wavelength different from the first wavelength. A graphene quantum dot includes carbon atoms and nitrogen atoms where the nitrogen atoms are present within the graphene quantum dot at a level between 6.0% and 11.0% of a level of carbon atoms present in the graphene quantum dot.

The present invention provides a method for forming a quantum well device having high mobility and high breakdown voltage with enhanced performance and reliability. A method for fabrication of a Vertical Cylindrical GaN Quantum Well Power Transistor for high power application is disclosed. Compared with the prior art, the method of forming a quantum well device disclosed in the present invention has the beneficial effects of high mobility and high breakdown voltage with better performance and reliability.

In various embodiments of the present disclosure, there is provided a method of manufacturing a monolayer graphene photodetector, the method including forming a graphene quantum dot array in a graphene monolayer, and forming an electron trapping center in the graphene quantum dot array. Accordingly, a monolayer graphene photodetector is also provided.

Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions. In a second example, the quantum dots are incorporated into epitaxially doped source and drain regions.

Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrode 5A and an other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes.