A method for forming a vertical single electron transistor includes forming a heterostructured nanowire having a SiGe region centrally disposed between an upper portion and a lower portion in the nanowire. An oxide is deposited to cover the SiGe region, and a condensation process is performed to convert the SiGe to oxide and condense Ge to form an island between the upper portion and the lower portion of the nanowire. A bottom contact is formed about the lower portion, a first dielectric layer is formed on the bottom contact and a gate structure is formed about the island on the first dielectric layer. A second dielectric layer is formed on the gate structure, and a top contact is formed on the second dielectric layer.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes an insulating material to define multiple rows of quantum dot formation regions; and a gate that extends over multiple ones of the rows.

Passivated semiconductor nanoparticles and methods for the fabrication and use of passivated semiconductor nanoparticles is provided herein.

Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Semiconductor element, method of reading out a quantum dot device and system. The present document relates to a semiconductor element for providing a source reservoir for a charge sensor of a quantum dot device. The element comprises a semiconductor heterostructure (2, 3, 5) including a quantum well layer (5) contiguous to a semiconductor functional layer (3), one or more ohmic contacts (9) for providing charge carriers, and a first accumulation gate electrode (13) located opposite the quantum well layer and spaced apart therefrom at least by the semiconductor functional layer for enabling to form a two dimensional charge carrier gas (14) in a first area of the quantum well layer upon applying a first biasing voltage to the first accumulation gate electrode. The device further comprises a second accumulation gate electrode (17) opposite the quantum well layer and electrically isolated from the first accumulation gate electrode (13), the second accumulation gate electrode enabling to be biased with a second biasing voltage, for enabling to extend the two dimensional charge carrier gas in a second area (18) contiguous to the first area. This document further relates to a method of determining a spin state in a quantum dot device, as well as a system comprising a quantum dot device and a semiconductor element.

Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.

A quantum rod includes a core of ZnS semiconductor particle having a rod shape; and a transition metal with which the core is doped and which is biased at one side of a length direction of the core.

Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.

A method for manufacturing an electronic circuit includes forming first electrodes distributed at a constant pitch; forming spacers against the first electrodes; forming a second electrode between two neighbouring spacers; and replacing each spacer with a third electrode. The first, second and third electrodes are thus distributed at an average pitch equal to R/4.

The present inventive concept relates to a spin qubit transistor (100) comprising a base layer (102), a first qubit comprising, a first computing semiconductor island (106) and a first readout semiconductor island (108) arranged with a distance in the range of 3-10 nm therebetween, a second qubit comprising, a second computing semiconductor island (110) and a second readout semiconductor island (112) arranged with a distance in the range of 3-10 nm therebetween, wherein each of said semiconductor islands has a size causing each of said semiconductor islands to exhibit 3-dimensional quantum confinement of a single electron hole, and wherein each of said semiconductor islands forms a semiconductor heterojunction with the base layer. Each of the semiconductor islands has a corresponding gate (G1-G4), for modulation of the computing islands or readout of the readout islands. Said first computing semiconductor island and said second computing semiconductor island are configured to have a unique resonance frequency respectively. A control electrode arrangement (B) between the computing and the readout islands controls the coupling between the qubits. The present inventive concept further comprises a method for forming a spin qubit transistor and a quantum computer comprising at least one spin qubit transistor.