In a light emitting device, luminance irregularities caused by fluctuation in threshold of TFTs for supplying a current to EL elements among pixels hinder the light emitting device from improving the image quality. A voltage equal to the threshold of a TFT 110 is held in capacitor means 111 in advance. When a video signal is inputted from a source signal line, the voltage held in the capacitor means is added to the signal, which is then applied to a gate electrode of the TFT 110. Even when threshold is fluctuated among pixels, each threshold is held in the capacitor means 111 of each pixel, and therefore, influence of the threshold fluctuation can be removed. Since the threshold is stored in the capacitor means 111 alone and the voltage between two electrodes is not changed while a video signal is written, fluctuation in capacitance value has no influence.

A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.

Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.

A display panel including pixels disposed on a substrate, where each of the pixels includes a light emitting element, and a capacitor. The capacitor of a first one of the pixels is partially overlapped, in a vertical direction, by respective pixel areas of two of the pixels. The anode of the capacitor of the first one of the pixels may be disposed closer to the substrate than a cathode of the capacitor, thereby reducing a parasitic capacitance between the capacitor and an anode of the light emitting element of one of the two pixels overlapping the capacitor.

To provide a semiconductor device with large storage capacity and low power consumption. The semiconductor device includes an oxide semiconductor, a first transistor, a second transistor, and a dummy word line. A channel formation region in the first transistor and a channel formation region in the second transistor are formed in different regions in the oxide semiconductor. The dummy word line is provided to extend between the channel formation region in the first transistor and the channel formation region in the second transistor. By applying a predetermined potential to the dummy word line, the first transistor and the second transistor are electrically isolated in a region of the oxide semiconductor which intersects the dummy word line.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

A highly reliable semiconductor device suitable for miniaturization and high integration is provided. The semiconductor device includes a first transistor, a first insulator over the first transistor, a second transistor over the first insulator, a second insulator over the second transistor, and a capacitor over the second insulator. The first insulator has a barrier property against oxygen and hydrogen. The second transistor includes an oxide semiconductor. The second insulator includes an oxygen-excess region. The capacitor includes a first electrode, a second electrode, and a dielectric between the first electrode and the second electrode. The dielectric includes a third insulator having a barrier property against oxygen and hydrogen. The first insulator and the third insulator are in contact with each other on an outer edge of a region where the second transistor is located so that the second transistor and the second insulator are enclosed by the first insulator and the third insulator.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

A method includes forming an insulating carrier substrate, forming a shallow trench isolation region within the insulating carrier substrate, and forming a plurality of gate recesses on the shallow trench isolation region. The plurality of gate recesses is formed by forming a plurality of dummy gates on the shallow trench isolation region and etching the plurality of dummy gates. The method further includes depositing a metal resistor layer within the plurality of gate recesses.

An integrable electrochemical capacitor and methods for manufacturing the same are disclosed. The electrochemical capacitor comprises a first electrode comprising a first rigid piece having a first porous portion, a second electrode comprising a second rigid piece having a second porous portion, and an electrolyte in contact with the first porous portion and the second porous portion. The structure allows the electrochemical capacitor to be manufactured without a separator film between the electrodes and is compatible with semiconductor manufacturing technologies. The electrochemical capacitor can also be manufactured within a SOI layer 8.