A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.

A tiled array of hybrid assemblies and a method of forming such an array enables the assemblies to be placed close together. Each assembly comprises first and second dies, with the second die mounted on and interconnected with the first die. Each vertical edge of a second die which is to be located adjacent to a vertical edge of another second die in the tiled array is etched such that the etched edge is aligned with a vertical edge of the first die. Indium bumps are deposited on a baseplate where the hybrid assemblies are to be mounted, and the assemblies are mounted onto respective indium bumps using a hybridizing machine, enabling the assemblies to be placed close together, preferably 10 m. The first and second dies may be, for example. a detector and a readout IC, or an array of LEDs and a read-in IC.

A light emitting device includes an active layer capable of producing light when current is injected thereinto, a first cladding layer and a second cladding layer that sandwich the active layer, a first electrode electrically connected to the first cladding layer, and a second electrode electrically connected to the second cladding layer. The active layer forms an optical waveguide that guides the light produced in the active layer. The optical waveguide has a window section that is provided in an end portion of the optical waveguide and has a band gap wider than the band gap of the active layer. The carrier concentration of a first layer provided between the window section and the second electrode is lower than the carrier concentration of the second cladding layer.

A portable lighting apparatus is provided with a gallium-and-nitrogen containing laser diode based white light source combined with an infrared illumination source which are driven by drivers disposed in a printed circuit board assembly enclosed in a compact housing and powered by a portable power supply therein. The portable lighting apparatus includes a first wavelength converter configured to output a white-color emission and an infrared emission. A beam shaper may be configured to direct the white-color emission and the infrared emission to a front aperture of a compact housing of the portable lighting apparatus. An optical transmitting unit is configured to project or transmit a directional light beam of the white light emission and/or the infrared emission for illuminating a target of interest, transmitting a pulsed sensing signal or modulated data signal generated by the drivers therein. In some configurations, detectors are included for depth sensing and visible/infrared light communications.

A light emitting device includes a semiconductor light emitting element; a mounting substrate; a support substrate; a joining layer which joins the semiconductor light emitting element and the mounting substrate together, is a sintered body of metal particles, and has a pore; and a joining layer which joins the mounting substrate and the support substrate together, is a sintered body of metal particles, and has a pore, in which a porosity of the joining layer is lower than a porosity of the joining layer.

In a light emitting device, a ridge section has first and second tapered sections respectively increasing in width from a center position toward first and second light exiting surfaces, and a connection area has third and fourth tapered sections respectively increasing in width from the center position toward the first and second light exiting surfaces. The outer edge angle of the connection area that specifies the third tapered section's width relative to the center line of an optical waveguide is greater than the outer edge angle of the ridge section that specifies the first tapered section's width relative to the center line. The outer edge angle of the connection area that specifies the fourth tapered section's width relative to the center line is greater than the outer edge angle of the ridge section that specifies the second tapered section's width relative to the center line.

A semiconductor optical device includes: a ridge stripe structure portion 20 in which a first compound semiconductor layer 31, an active layer 32, and a second compound semiconductor layer 32 are stacked and which has a first end surface 21 which emits light and a second end surface 22 opposite to the first end surface 21; and a current regulation region 41 provided to be adjacent to at least one of ridge stripe adjacent portions 40 positioned at both sides of the ridge stripe structure portion 20, at the second end surface side, and to be away from the ridge stripe structure portion 20. A bottom surface of the current regulation region 41 is under the active layer 33, and a top surface of the ridge stripe adjacent portion 40 excluding the current regulation region 41 is above the active layer 33.

In a luminescent diode and a method for manufacturing the same, a planar buried heterostructure (PBH) and a ridge waveguide structure are combined, so that the luminescent diode can be operated to generate a high output of 100 mW or more at low current. Further, it is possible to reduce electro-optic loss. In addition, the luminescent diode is applied to a wavelength tunable external cavity laser, so that it is possible to provide an external cavity laser having excellent output characteristics.

A light emitting device, particularly a super luminescent diode, includes an active layer provided between upper and lower electrodes for injecting electric current into the active layer. The active layer functions as an optical waveguide and has first and second edge faces for emitting light. The device further includes first and second light receiving sections for receiving light emitted from the first and second edge faces respectively and generating first and second pieces of optical information respectively and a control section for controlling the current injection amount into the active layer from the upper electrode according to the first and second pieces of optical information. The optical output and the spectral shape of the device can be easily, accurately and reliably controlled in a short period of time.

A light emitting device includes a laminated body having an active layer constituting a light waveguide, and first and second clad layers, and first and second electrodes. The light waveguide has first and second light emission surfaces from which light is emitted. The laminated body has a connection area connected to the second electrode. A width of the connection area is smallest at a central position where distances to the first and second light emission surfaces are equal, and increases toward end portion sides in an extending direction of the light waveguide. An outer edge of the connection area is provided with a first portion on the first light emission surface side, a second portion on the second light emission surface side, and third and fourth portions connecting the first and second portions. The third and fourth portions are smooth when viewed from the stacking direction.