A tiled array of hybrid assemblies and a method of forming such an array enables the assemblies to be placed close together. Each assembly comprises first and second dies, with the second die mounted on and interconnected with the first die. Each vertical edge of a second die which is to be located adjacent to a vertical edge of another second die in the tiled array is etched such that the etched edge is aligned with a vertical edge of the first die. Indium bumps are deposited on a baseplate where the hybrid assemblies are to be mounted, and the assemblies are mounted onto respective indium bumps using a hybridizing machine, enabling the assemblies to be placed close together, preferably 10 m. The first and second dies may be, for example. a detector and a readout IC, or an array of LEDs and a read-in IC.

In one embodiment of a superluminescent diode, a first diode adapted on a semiconductor die is to be forward-biased to output optical energy in response to a bias signal, and a second diode adapted on the semiconductor die is to be reverse-biased, the second diode to receive and absorb back propagating optical energy from the first diode and output a measure of the back propagating optical energy as an absorber feedback current. A comparator may be configured to compare the absorber feedback current to a reference current and output a comparison signal, and a driver control circuit coupled to the comparator may provide the bias signal based at least in part on the comparison signal. Other embodiments are described and claimed.

A light source module (100) with integrated wavemeter components (460, 494, 495) for stabilizing the output power and wavelength of a superluminescent diode or other broadband semiconductor light source (121) outputting a broadband output beam. A portion of the source output beam is directed to an optical edge filter (460) with a cross-over wavelength lying within the bandwidth of the output beam. The edge filter (460) divides the light it receives into a short-wavelength component and a long-wavelength component. These two components are then directed onto respective photodetectors (494, 495) that output respective signals to a wavemeter controller. The controller adjusts the drive current and/or temperature of the source to maintain the mean wavelength of the source's output beam at a set constant value according to a control parameter determined from a combination of the photodetector signals such as their ratio or the ratio between their difference and sum.

A nitride semiconductor light-emitting element emits light and includes an N-type cladding layer, an N-side optical guide layer, an active layer, an electron blocking layer, a P-type interlayer, a P-side optical guide layer, and a P-type cladding layer. Average band gap energy of the electron blocking layer is higher than average band gap energy of the P-type cladding layer. Average band gap energy of the P-type interlayer is higher than average band gap energy of the P-side optical guide layer, and is smaller than the average band gap energy of the electron blocking layer. An average impurity concentration of the P-type interlayer is lower than an average impurity concentration of the electron blocking layer, and is higher than an average impurity concentration of the P-side optical guide layer. A peak wavelength of the light is less than 400 nm.

Integrated circuit chips may be optically interconnected using microLEDs. Some interconnections may be vertically-launched parallel optical links. Some interconnections may be planar-launched parallel optical links.

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps: providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation, producing a first recess in the semiconductor layer sequence, which fully penetrates the active region, producing a first structure in the first recess, whereinat least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, andthe first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.