A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. A light generating structure formed over the n-type semiconductor contact layer has a set of quantum wells and barriers configured to emit or absorb target radiation. An ultraviolet transparent semiconductor layer having a non-uniform thickness is formed over the light generating structure. A p-type contact semiconductor layer having a non-uniform thickness is formed over the ultraviolet transparent semiconductor layer.

A method for fabricating an optically transparent conductor including depositing a plurality of metal nanowires on a substrate, annealing or illuminating the plurality of metal nanowires to thermally or optically fuse nanowire junctions between metal nanowires to form a metal nanowire network, disposing a graphene layer over the metal nanowire network to form a nanohybrid layer comprising the graphene layer and the metal nanowire network, depositing a dielectric passivation layer over the nanohybrid layer, patterning the dielectric passivation layer using lithography, printing, or any other method of patterning to define an area for the optically transparent conductor, and etching the patterned dielectric passivation layer to define the optically transparent conductor.

A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0Al+Ga0.5 and 0As1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength is 2.5 m or more at room temperature.

A system and method are provided for forming body structures including energy filters/shutter components, including energy/light directing/scattering layers that are actively electrically switchable. The filters or components are operable between at least a first mode in which the layers, and thus the presentation of the shutter components, appear substantially transparent when viewed from an energy/light incident side, and a second mode in which the layers, and thus the presentation of the energy filters or shutter components, appear opaque to the incident energy impinging on the energy incident side. The differing modes are selectable by electrically energizing, differentially energizing and/or de-energizing electric fields in a vicinity of the energy scattering layers, including electric fields generated between a paid of transparent electrodes sandwiching an energy scattering layer. Refractive indices of transparent particles, and the transparent matrices in which the particles are fixed, are tunable according to the applied electric fields.

Optoelectronic device including: a plurality of diodes each including a portion of a stack of first and second semiconductor layers doped according to opposite types, a portion of the first layer of each diode being coupled to a first electrode; trenches running through the stack; a conductive layer arranged against side walls of the trenches, insulated from the stack, coupled to the second electrodes and which is interrupted in such a way that portions of the conductive layer arranged around each of the diodes are insulated from other portions of the conductive layer arranged around the other diodes; conductive portions arranged in the trenches, insulated from the electrically conductive layer and coupled to one another and to a third electrode; bottom walls of the trenches being formed at least by the second electrodes.

The invention provides a silicon-based room-temperature infrared hot-electron photodetector, preparation method and use thereof. The photodetector includes a base and a planar multi-layer structure. The planar multi-layer structure includes a bottom conductive electrode, a silicon film, a transition metal film, and a transparent dielectric film. The electrode and the silicon film form an ohmic contact and constitute an optical reflector. The silicon film and the transition metal film form a Schottky contact, the thickness of the silicon film is smaller than the depletion layer width of a Schottky junction formed by the silicon film and the transition metal film, the transition metal film absorbs near infrared light and generates hot electrons to be injected into the silicon film, and the hot electrons are collected by the electrode to form a photocurrent. The transparent dielectric film is used as an antireflection layer and can reduce reflection of incident light.

A semiconductor stack includes a first-conductivity-type layer, a multiplication layer, a light absorption layer and a second-conductivity-type layer. The first-conductivity-type layer, the multiplication layer, the light absorption layer, and the second-conductivity-type layer are stacked in this order. The multiplication layer is a superlattice layer including a first element layer and a second element layer. The first element layer is an InP layer and the second element layer is a GaAs.sub.1-xSb.sub.x layer where x is 0.3 to 1, or the first element layer is an Al.sub.uGa.sub.1-uAs.sub.1-xSb.sub.x layer and the second element layer is an In.sub.yGa.sub.1-yAs layer where u is 0.2 to 1, x is 0.3 to 1, and y is 0.3 to 1, or the first element layer is an Al.sub.uGa.sub.1-uAs.sub.1-xSb.sub.x layer and the second element layer is a GaAs.sub.1-zSb.sub.z layer where u is 0.2 to 1, x is 0.3 to 1, and z is 0.3 to 1.