A protective covering configured for use with a mobile electronics device, including a front wall and a plurality of side walls defining a primary cavity. A back wall is disposed within the primary cavity separating the primary cavity into a protective covering electronics housing cavity and a mobile electronic device housing cavity. One or more apertures are disposed within the front wall. A light source is disposed within the protective covering electronics housing cavity, wherein at least a portion of the light source is disposed outside of the protective covering electronics housing cavity and through at least one of the one or more apertures in the front wall. A heat sink is disposed within the protective covering electronics housing cavity and in contact with the light source.

The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.

A composite substrate configured for epitaxial growth of a semiconductor layer thereon is provided. The composite substrate includes multiple substrate layers formed of different materials having different thermal expansion coefficients. The thermal expansion coefficient of the material of the semiconductor layer can be between the thermal coefficients of the substrate layer materials. The composite substrate can have a composite thermal expansion coefficient configured to reduce an amount of tensile stress within the semiconductor layer at room temperature and/or an operating temperature for a device fabricated using the heterostructure.

In one embodiment, the disclosure relates to a system of stacked and connected layers of circuits that includes at least one pair of adjacent layers having very few physical (electrical) connections. The system includes multiple logical connections. The logical interconnections may be made with light transmission. A majority of physical connections may provide power. The physical interconnections may be sparse, periodic and regular. The exemplary system may include physical space (or gap) between the a pair of adjacent layers having few physical connections. The space may be generally set by the sizes of the connections. A constant flow of coolant (gaseous or liquid) may be maintained between the adjacent pair of layers in the space.

A light emitting device includes a wiring board, a light emitting element, and a protection film. The wiring board includes a base member, and positive and negative wiring layer parts. The positive and negative wiring layer parts are arranged on or above the upper surface of the base member. The light emitting element is mounted on the wiring layer parts in a flip-chip manner. The protection film covers the base member, the wiring layer parts and the light emitting element, and is formed of an inorganic material for serving as the exterior surface of the light emitting device. Each of the wiring layer parts has a curved outer-side edge. The curvature of the outer-side edge is substantially constant.

A heat sink can include a fin using graphite, and a base with a high heat dissipation film formed on its surface to be provided with a high heat dissipation performance. The heat sink can include a base made of metal and a fin fixed to the base. The fin can include a graphite sheet. The base has a surface coated with a film having a higher heat dissipation property than that of the metal constituting the base. The film of the base is removed from at least the region where the fin is fixed, so that the fin is fixed to the metal constituting the base.

An atomic oscillator includes: a gas cell sealing alkali metal atoms; a light source emitting light to the gas cell; and a light detection unit detecting a light amount of light transmitted through the gas cell, in which the light source includes a substrate, a first mirror layer disposed on an upper portion of the substrate, an active layer disposed on an upper portion of the first mirror layer, a second mirror layer disposed on an upper portion of the active layer, a first contact layer disposed on an upper portion of the second mirror layer, a light absorption layer disposed on an upper portion of the first contact layer, and a second contact layer disposed on an upper portion of the light absorption layer.

An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). The nanowire semiconductor layer can include sub-layers of varying composition, at least one of which is an active layer that can include quantum wells and barriers. A heterostructure can include n-type and p-type semiconductor contact layers adjacent to the nanowire semiconductor layer containing the active layer.

An ultraviolet ray emitting package includes: a substrate having an upper portion defining a recess; an ultraviolet ray emitting element provided within the recess of the substrate; an ultraviolet ray transmitting window member provided on the upper portion of the substrate to cover the recess of the substrate; a resin adhesive layer provided between the upper portion of the substrate and the ultraviolet ray transmitting window member; and an optical shielding layer provided between the resin adhesive layer and the ultraviolet ray transmitting window member.