An integrated circuit is provided that comprises a first substrate having a plurality of conductive contact pads spaced apart from one another on a surface of the first substrate, a dielectric layer overlying the first substrate and the plurality of conductive contact pads, and a second substrate overlying the dielectric layer. A plurality of superconducting contacts extend through the second substrate and the dielectric layer to the first substrate, wherein each superconducting contact of the plurality of superconducting contacts is aligned with and in contact with a respective conductive contact pad of the plurality of conductive contact pads.

Techniques for designing and fabricating quantum circuitry, including a coplanar waveguide (CPW), for quantum applications are presented. With regard to a CPW, a central conductor and two return conductor lines can be formed on a dielectric substrate, with one return conductor line on each side of the central conductor and separated from it by a space. The central conductor can have bridge portions that can be raised a desired distance above the substrate and base conductor portions situated between the bridge portions and in contact with the surface of the substrate; and/or portions of the substrate underneath the bridge portions of the central conductor can be removed such that the bridge portions, whether raised or unraised, can be the desired distance above the surface of the remaining substrate, and the base conductor portions can be in contact with other portions of the surface of the substrate that were not removed.

One example includes a superconducting current control system. The system includes an inductive coupler comprising a load inductor and a control inductor. The inductive coupler can be configured to inductively provide a control current from the control inductor to a superconducting circuit device based on a load current being provided through the load inductor. The system also includes a current control element comprising a superconducting quantum interference device (SQUID) array comprising a plurality of SQUIDs. The current control element can be coupled to the inductive coupler to control an amplitude of the load current through the load inductor, and thus to control an amplitude of the control current to the superconducting circuit device.

A vertical Josephson junction device includes a substrate, and an epitaxial stack formed on the substrate. The vertical Josephson junction device includes a first superconducting electrode embedded in the epitaxial stack, and a second superconducting electrode embedded in the epitaxial stack, the second superconducting electrode being separated from the first superconducting electrode by a dielectric layer. In operation, the first superconducting electrode, the dielectric layer, and the second superconducting electrode form a vertical Josephson junction.

A bistable device allows supercurrent to flow when functioning in one regime, wherein magnetization directions of different magnetic layers are antiparallel, but restricts supercurrent when switched to function in a resistive regime, wherein the magnetization directions are parallel. In the first regime, the device acts as a Josephson junction, which allows it to be used in superconducting quantum interference devices (SQUIDs) and other circuits in which quantization of magnetic flux in a superconducting loop is desired. In the second, resistive regime, flux quantization is effectively eliminated in loops containing the device, and current is diverted to parallel superconducting components. The bistable device thereby acts as a superconducting switch, useful for a variety of circuit applications, including to steer current for memory or logic circuits, adjust logical circuit functionality at runtime, or to burn off stray flux during cooldown.

Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing an adhesion layer onto a superconducting resonator and a silicon substrate that are comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the adhesion layer can comprise a chemical compound having a thiol functional group.

A hard mask includes a silicon oxide layer provided on a bare silicon wafer; and a silicon nitride layer provided on the silicon oxide layer, wherein the silicon nitride is provided with a first pattern, the silicon oxide layer is provided with a second pattern corresponding to the first pattern, the first pattern and the second pattern have different shapes, and the first pattern and the second pattern are configured to assist in forming a Josephson junction on the bare silicon wafer.

High-saturation power Josephson ring modulators and fabrication of the same are provided. A Josephson ring modulator can comprise a plurality of matrix junctions. Matrix junctions of the plurality of matrix junctions can comprise respective superconducting parallel branches that can comprise a plurality of Josephson junctions operatively coupled in a series configuration. A method can comprise forming a first matrix junction comprising arranging a first group of Josephson junctions as first parallel branches. The method can also comprise forming a second matrix junction comprising arranging a second group of Josephson junctions as second parallel branches. Further, the method can comprise forming a third matrix junction comprising arranging a third group of Josephson junctions as third parallel branches. In addition, the method can comprise forming a fourth matrix junction comprising arranging a fourth group of Josephson junctions as fourth parallel branches.

This disclosure relates to Superconducting Quantum Interference Apparatuses, such as SQUID arrays and SQUIFs. A superconducting quantum interference apparatus comprises an array of loops each loop constituting a superconducting quantum interference device. The array comprises multiple columns, each of the columns comprises multiple rows connected in series, each of the multiple rows comprises a number of loops connected in parallel, and the number of loops connected in parallel in each row is more than two and less than 20 to improve a performance of the apparatus. It is an advantage that keeping the number of loops in parallel below 20 improves the performance of the apparatus. This is contrary to existing knowledge where it is commonly assumed that a larger number of parallel loops would increase performance.

A technique relates to a trilayer Josephson junction structure. A dielectric layer is on a base electrode layer that is on a substrate. A counter electrode layer is on the dielectric layer. First and second counter electrodes are formed from the counter electrode layer. First and second dielectric layers are formed from the dielectric layer. First and second base electrodes are formed from base electrode layer. The first counter electrode, first dielectric layer, and first base electrode form a first stack. The second counter electrode, second dielectric layer, and second base electrode form a second stack. A shunting capacitor is between first and second base electrodes. An ILD layer is deposited on the substrate, the first and second counter electrodes, and the first and second base electrodes. A contact bridge connects the first and second counter electrodes. An air gap is formed underneath the contact bridge by removing ILD.