Patent classifications
H01L39/02
Method for producing an electronic component with double quantum dots
A process for fabricating an electronic component incorporating double quantum dots and split gates includes providing a substrate surmounted with a stack of a semiconductor layer and of a dielectric layer that is formed above the semiconductor layer. The process also includes forming a mask on the dielectric layer and etching the dielectric layer and the semiconductor layer with the pattern of the mask, so as to form a stack of a semiconductor nanowire and of a dielectric hard mask. Finally, the process includes depositing a gate material on all of the wafer and carrying out a planarization, until the dielectric hard mask is reached, so as to form first and second gates that are electrically insulated from each other on either side of said nanowire.
CIRCUIT MANUFACTURING METHOD AND SUPERCONDUCTING CIRCUIT
A circuit manufacturing method according to the present disclosure is a circuit manufacturing method by deposition, comprising performing first deposition for forming a first superconductor layer, oxidizing a surface of the first superconductor layer to form an oxide film, performing second deposition for forming a second superconductor layer, whereby a circuit in which Josephson junctions are aligned is generated. A mask includes two opening parts and an odd number of first-type opening parts. The width of a first-type opening part has such a length that the area of a Josephson junction formed based on the first superconductor layer and the second superconductor layer derived from the first-type opening part becomes larger than the area of a Josephson junction formed based on the first superconductor layer and the second superconductor layer derived from the two opening parts that are adjacent to each other.
QUANTUM DEVICE FACILITATING SUPPRESSION OF ZZ INTERACTIONS BETWEEN TWO-JUNCTION SUPERCONDUCTING QUBITS
Devices and/or computer-implemented methods facilitating static ZZ suppression and Purcell loss reduction using mode-selective coupling in two-junction superconducting qubits are provided. In an embodiment, a device can comprise a superconducting bus resonator. The device can further comprise a first superconducting qubit. The device can further comprise a second superconducting qubit, the first superconducting qubit and the second superconducting qubit respectively comprising: a first superconducting pad; a second superconducting pad; a third superconducting pad; a first Josephson Junction coupled to the first superconducting pad and the second superconducting pad; and a second Josephson Junction coupled to the second superconducting pad and the third superconducting pad. The first superconducting pad and the second superconducting pad of the first superconducting qubit and the second superconducting qubit are coupled to the superconducting bus resonator. The superconducting bus resonator entangles the first superconducting qubit and the second superconducting qubit based on receiving a control signal.
QUANTUM COUPLER FACILITATING SUPPRESSION OF ZZ INTERACTIONS BETWEEN QUBITS
Devices and/or computer-implemented methods to facilitate ZZ cancellation between qubits are provided. According to an embodiment, a device can comprise a coupler device that operates in a first oscillating mode and a second oscillating mode. The device can further comprise a first superconducting qubit coupled to the coupler device based on a first oscillating mode structure corresponding to the first oscillating mode and based on a second oscillating mode structure corresponding to the second oscillating mode. The device can further comprise a second superconducting qubit coupled to the coupler device based on the first oscillating mode structure and the second oscillating mode structure.
Superconductor interconnect system
One embodiment includes a computer interconnect system. The system includes a first cable comprising a first superconducting signal line formed from a superconductor material to propagate at least one signal and a second cable comprising a second superconducting signal line formed from the superconductor material to propagate the respective at least one signal. The system also includes an interconnect structure configured to contact each of the first and second cable and comprising a third superconducting signal line formed from the superconductor material and configured to propagate the respective at least one signal between the respective first and second superconducting signal line. The system further includes at least one interconnect contact disposed on the first, second, and third at least one superconducting signal line at a contact portion between each of the at least one first and third superconducting signal lines and the at least second and third superconducting signal lines.
Ferrimagnetic/ferromagnetic exchange bilayers for use as a fixed magnetic layer in a superconducting-based memory device
A magnetic Josephson junction (MJJ) device having a ferrimagnetic/ferromagnetic (FIM/FM) exchange-biased bilayer used as the magnetic hard layer improves switching performance by effectively sharpening the hysteresis curve of the device, thereby reducing error rate when the device is used in a Josephson magnetic random access memory (JMRAM) memory cell. Thus, the materials and devices described herein can be used to build a new type of MJJ, termed a ferrimagnetic Josephson junction (FIMJJ), for use in JMRAM, to construct a robust and reliable cryogenic computer memory that can be used for high-speed superconducting computing, e.g., with clock speeds in the microwave frequency range.
Semiconductor-superconductor hybrid device and its fabrication
A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
METHOD FOR THE IN SITU PRODUCTION OF MAJORANA MATERIAL SUPERCONDUCTOR HYBRID NETWORKS AND TO A HYBRID STRUCTURE WHICH IS PRODUCED USING THE METHOD
A method for producing a hybrid structure, the hybrid structure including at least one structured Majorana material and at least one structured superconductive material arranged thereon includes producing, on a substrate, a first mask for structured application of the Majorana material and a further mask for structured growth of the at least one superconductive material, which are aligned relatively to one another, and applying the at least one structured superconductive material to the structured Majorana material with the aid of the further mask. The structured application of the Majorana material and of the at least one superconductive material takes place without interruption in an inert atmosphere.
Layered Hybrid Quantum Architecture for Quantum Computing Applications
A quantum system includes a qubit array comprising a plurality of qubits. A bus resonator is coupled between at least one pair of qubits in the qubit array. A switch is coupled between the at least one qubit pair of qubits.
SUPERCONDUCTING QUBIT LIFETIME AND COHERENCE IMPROVEMENT VIA BACKSIDE ETCHING
A method for improving lifetime and coherence time of a qubit in a quantum mechanical device is provided. The method includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit having capacitor pads. The method further includes at least one of removing an amount of substrate material from the backside of the substrate at an area opposite the at least one qubit or depositing a superconducting metal layer at the backside of the substrate at the area opposite the at least one qubit to reduce radiofrequency electrical current loss due to at least one of silicon-air (SA) interface, metal-air (MA) interface or silicon-metal (SM) interface so as to enhance a lifetime (T1) and a coherence time (T2) in the at least one qubit.