A quantum device capable of improving a cooling effect while securing the number of terminals is provided. A quantum device according to an example embodiment includes a quantum chip 10, and an interposer 20 on which the quantum chip 10 is mounted, in which the interposer 20 includes a conductive wiring line CL1 electrically connected to the quantum chip 10, and a metal film 70 disposed in a part of the interposer 20 that is in contact with a sample stage 30 having a cooling function, and a mounting surface 21 of the interposer 20 on which the quantum chip 10 is mounted or an opposite surface 22 opposite to the mounting surface 21 includes a first area AR11 and a second area AR12 different from the first area AR11 as viewed in a direction perpendicular to the mounting surface 21 or the opposite surface 22.

A quantum device according to an example embodiment includes a quantum chip 10, and an interposer 20 on which the quantum chip 10 is mounted, in which the interposer 20 includes a conductive wiring line CL1 electrically connected to the quantum chip 10, a mounting surface 21 of the interposer 20 on which the quantum chip 10 is mounted or an opposite surface 22 opposite to the mounting surface 21 includes a first area AR11 and a second area AR12 different from the first area AR11 as viewed in a direction perpendicular to the mounting surface 21 or the opposite surface 22, the conductive wiring line CL1 is disposed in the first area AR11 on the mounting surface 21 or the opposite surface 22, and a movable member 60 is in contact with the second area AR12 of the interposer 20.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

A device comprising: a portion of semiconductor; a portion of superconductor arranged to a enable a topological phase having a topological gap to be induced in a region of the semiconductor by proximity effect; and a portion of a non-magnetic material comprising an element with atomic number Z greater than or equal to 26, arranged to increase the topological gap in the topological region of the semiconductor.

A quantum-mechanical photon-pair generator includes first, second, third, and fourth Josephson junctions electrically connected in a bridge circuit having first, second and third resonance eigenmodes, and a source of magnetic flux configured to provide, during operation, a magnetic flux through the bridge circuit to cause coupling between the first, second and third resonance eigenmodes when the third resonance eigenmode is excited. The photon-pair generator further includes first, second and third electromagnetic resonators having eigenmodes in resonance with the first, second and third resonance eigenmodes of the bridge circuit, respectively. The third frequency of the third resonance eigenmode is equal to a sum of a first frequency of the first resonance eigenmode plus a second frequency of the second resonance eigenmode such that, during operation, a photon having the third frequency is split into two quantum-mechanically entangled photons having the first and second frequencies, respectively.

Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.

Systems and techniques that facilitate mode-selective couplers for frequency collision reduction are provided. In various embodiments, a device can comprise a control qubit. In various aspects, the device can comprise a first target qubit coupled to the control qubit by a first mode-selective coupler. In various instances, the first mode-selective coupler can facilitate A-mode coupling between the control qubit and the first target qubit. In various embodiments, the device can comprise a second target qubit coupled to the control qubit by a second mode-selective coupler. In various aspects, the second mode selective coupler can facilitate B-mode coupling between the control qubit and the second target qubit. In various embodiments, the first mode-selective coupler can comprise a capacitor that capacitively couples a middle capacitor pad of the control qubit to a middle capacitor pad of the first target qubit. In various embodiments, the second mode-selective coupler can comprise a first capacitor that capacitively couples an end capacitor pad of the control qubit to an end capacitor pad of the first target qubit and can comprise a second capacitor that capacitively couples the end capacitor pad of the control qubit to a middle capacitor pad of the second target qubit.

Methods, systems, and apparatus for parallel optimization of continuously running quantum error correction by closed-loop feedback. In one aspect, a method includes continuously and effectively optimizing qubit performance in-situ whilst an error correction operation on the quantum system is running. The method directly monitors the output from error detection and provides this information as feedback to calibrate the quantum gates associated with the quantum system. In some implementations, the physical qubits are spatially partitioned into one or more independent hardware patterns, where the errors attributable to each hardware pattern are non-overlapping. The one or more different sets of hardware patterns are then temporarily interleaved such that all physical qubits and operations are optimized. The method allows for the optimization of each section of a hardware pattern to be performed individually and in parallel, and can result is O(1) scaling.

A quantum processor comprises a plurality of tiles, the plurality of tiles arranged in a first grid, and where a first tile of the plurality of tiles comprises a number of qubits (e.g., superconducting qubits). The quantum processor further comprises a shift register comprising at least one shift register stage communicatively coupled to a frequency-multiplexed resonant (FMR) readout, a qubit readout device, a plurality of digital-to-analog converter (DAC) buffer stages, and a plurality of shift-register-loadable DACs arranged in a second grid. The quantum processor may further include a transmission line comprising at least one transmission line inductance, a superconducting resonator, and a coupling capacitance that communicatively couples the superconducting resonator to the transmission line. A digital processor may program at least one of the plurality of shift-register-loadable DACs. Programming the first tile may be performed in parallel with programming a second tile of the plurality of tiles.

Techniques for creating an offset embedded ground plane cutout for a qubit device to facilitate frequency tuning of the qubit device are presented. A qubit device can comprise a first substrate and second substrate in a flip-chip assembly. The qubit chip assembly can comprise a qubit component fabricated on the first substrate. The qubit component can comprise a Josephson junction (JJ) circuit that can be offset from a center point of the qubit component. The qubit chip assembly can comprise an embedded ground plane situated on a surface of the qubit chip assembly. A cutout section can be formed in the ground plane and positioned over the JJ circuit. The cutout section can enable access of an optical signal or magnetic flux to the JJ circuit. A frequency of the qubit component can be tuned based on application of the optical signal or magnetic flux to the JJ circuit.