A semiconductor device includes a substrate; a fin structure disposed over the substrate; a gate structure disposed over the substrate, wherein an extension direction of the fin structure intersects an extension direction of the gate structure; and a first well disposed under the gate structure, corresponding to an emitter region of the semiconductor device, and having a first conductivity type, wherein the first well is adjacent to a well block layer, and the well block layer is disposed under the gate structure in the emitter region; wherein the well block layer has a first doping concentration of a well implant, the first well has a second doping concentration of the well implant, and the first doping concentration is less than the second doping concentration.

A bipolar junction transistor includes an emitter region, a base region, a collector region and a plurality of fin structures. The emitter region is disposed on a substrate. The base region surrounds the emitter region. The collector region surrounds the base region. The plurality of fin structures are disposed in the base region and surround the emitter region, and the plurality of fin structures fixedly extend along a direction and parallel to each other.

An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate having an upper substrate surface, an active well region, a first terminal well region, and a second terminal well region. The active well region is in the substrate, and the first terminal well region and the second terminal well region are in the active well region. The second terminal well region is spaced apart from the first terminal well region. The first terminal well region and the second terminal well region each includes a first doped region, a first contact region having at least a portion in the first doped region, and a second contact region spaced apart from the first doped region.

An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate having an upper substrate surface, an active well region, a first terminal well region, and a second terminal well region. The active well region is in the substrate, and the first terminal well region and the second terminal well region are in the active well region. The second terminal well region is spaced apart from the first terminal well region. The first terminal well region and the second terminal well region each includes a first doped region, a first contact region having at least a portion in the first doped region, and a second contact region spaced apart from the first doped region.

The semiconductor device includes an n-type first semiconductor region 11 formed on a surface side of a p-type semiconductor substrate 10 and serving as a common path for currents flowing through a switching element and a protection element, an n-type common contact region 12 formed on the first semiconductor region 11 with a high impurity concentration and connected to a common electrode 21 serving as both a first main electrode and a protection element side first electrode, a p-type second semiconductor region 13 and a p-type third semiconductor region 14 locally formed in the first semiconductor region 11 at locations separated from the common contact region 12, and an n-type fourth semiconductor region 15 locally formed in the second semiconductor region 13 in plan view. A second main electrode 22 is connected to the fourth semiconductor region 15, and a protection element side second electrode 26 is provided inside the third semiconductor region 14.

The semiconductor device includes an n-type first semiconductor region 11 formed on a surface side of a p-type semiconductor substrate 10 and serving as a common path for currents flowing through a switching element and a protection element, an n-type common contact region 12 formed on the first semiconductor region 11 with a high impurity concentration and connected to a common electrode 21 serving as both a first main electrode and a protection element side first electrode, a p-type second semiconductor region 13 and a p-type third semiconductor region 14 locally formed in the first semiconductor region 11 at locations separated from the common contact region 12, and an n-type fourth semiconductor region 15 locally formed in the second semiconductor region 13 in plan view. A second main electrode 22 is connected to the fourth semiconductor region 15, and a protection element side second electrode 26 is provided inside the third semiconductor region 14.

A semiconductor device includes a semiconductor substrate, a base region, an emitter region, a collector region, and an element isolation insulating film. The semiconductor substrate has a main surface. The base region has a first conductivity type and is disposed in a surface layer of the semiconductor substrate that is close to the main surface. The emitter region has a second conductivity type and is disposed in a surface layer of the base region. The collector region has the second conductivity type and is disposed at a portion in the surface layer of the semiconductor substrate apart from the emitter region. The element isolation insulating film is disposed on the main surface, and has a thermal oxide film being in contact with a junction interface between the base region and the emitter region.

A semiconductor device includes a semiconductor substrate, a base region, an emitter region, a collector region, and an element isolation insulating film. The semiconductor substrate has a main surface. The base region has a first conductivity type and is disposed in a surface layer of the semiconductor substrate that is close to the main surface. The emitter region has a second conductivity type and is disposed in a surface layer of the base region. The collector region has the second conductivity type and is disposed at a portion in the surface layer of the semiconductor substrate apart from the emitter region. The element isolation insulating film is disposed on the main surface, and has a thermal oxide film being in contact with a junction interface between the base region and the emitter region.

Semiconductor devices, integrated circuits containing such semiconductor devices, and related methods are described. For example, a semiconductor device includes a field effect transistor comprising a gate and source and drain regions, wherein the source and drain regions extend parallel to one another in a first direction. The semiconductor device further includes a first metallization layer including first source and drain metal lines extending parallel to one another in the first direction, and a second metallization layer including second source and drain metal lines connected to the respective first source and drain metal lines. The second source and drain metal lines comprise a set of source metal lines that extend outward from an additional source metal line that extends in a second direction perpendicular to the first direction, and a set of drain metal lines that extend outward from an additional drain metal line that extends in the second direction.

Semiconductor devices, integrated circuits containing such semiconductor devices, and related methods are described. For example, a semiconductor device includes a field effect transistor comprising a gate and source and drain regions, wherein the source and drain regions extend parallel to one another in a first direction. The semiconductor device further includes a first metallization layer including first source and drain metal lines extending parallel to one another in the first direction, and a second metallization layer including second source and drain metal lines connected to the respective first source and drain metal lines. The second source and drain metal lines comprise a set of source metal lines that extend outward from an additional source metal line that extends in a second direction perpendicular to the first direction, and a set of drain metal lines that extend outward from an additional drain metal line that extends in the second direction.