A semiconductor device and a power conversion device each comprise a drift layer, a gate electrode to face a well region and a source region via a gate insulating film, a source electrode provided on an interlayer insulating film covering the gate electrode and connected to the well region and the source region, a first separation region provided in an active region in which a plurality of MOSFETs each including the well region, the source region, and the gate electrode are arranged in the drift layer, the first separation region being provided to be connected to the drift layer and forming Schottky connection with the source electrode, and a surge current conduction region provided in the active region, and blocks connection between the source electrode and the drift layer, thereby enabling the achievement of a semiconductor device and a power conversion device that exhibit high surge tolerance.

A trench-gate planar-gate semiconductor device with monolithically integrated Schottky barrier diode and Junction Schottky barrier diode, where the semiconductor device includes at least one semiconductor cell. The semiconductor cell includes: a substrate arranged at a bottom surface of the semiconductor cell; a vertical channel section placed above the substrate; a planar channel section formed above the substrate and below a trench that is formed on both sides of the vertical channel section; a Schottky section placed above the substrate; and a Junction Schottky section placed above the substrate. The vertical channel section and the Schottky section are placed in a mesa section of the semiconductor device along a first direction parallel to the bottom surface. The planar channel section and the Junction Schottky section are placed below the trench along the first direction parallel to the bottom surface.

Disclosed is a trench-type power device and a manufacturing method thereof. The trench-type power device comprises: a semiconductor substrate; a drift region located on the semiconductor substrate; a first trench and a second trench located in the drift region; a gate stack located in the first trench; and Schottky metal located on a side wall of the second trench, wherein the Schottky metal and the drift region form a Schottky barrier diode. The trench-type power device adopts a double-trench structure, which combines a trench-type MOSFET with the Schottky barrier diode and forms the Schottky metal on the side wall of the trench, so that the performance of the power device can be improved, and the unit area of the power device can be reduced.

A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and Q.sub.RR may be achieved, leading to lower switching losses.

A semiconductor device having a termination structure is provided that is useful for trench semiconductor devices, such as trench Schottky diodes. The device includes a termination structure having a primary termination trench including a first insulating layer arranged on a sidewall and bottom, and a first polysilicon region spaced apart from the sidewall and bottom by the first insulating layer; and a secondary termination trench arranged further away from the active region than the primary termination trench. The secondary termination trench includes a second insulating layer arranged on a sidewall and bottom, and polysilicon spacers separated from the sidewall and bottom by the second insulating layer. The polysilicon spacers are spaced apart and arranged on opposing ends of the secondary termination trench in an outward direction with respect to the active region, and a width of the primary termination trench is less than a width of the secondary termination trench.

A silicon carbide semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a plurality of trenches, a plurality of gate electrodes respectively provided in the trenches, a first conductive film, a first electrode, a second electrode, a plurality of first high-concentration regions, a plurality of second high-concentration regions, and a second conductive film. The first semiconductor region has a first portion and a plurality of second portions respectively at positions facing the plurality of second high-concentration regions in a depth direction. The second conductive film forms a Schottky contact with the plurality of second portions of the first semiconductor region, such that each junction surface between the second conductive film and the first semiconductor region forms a Schottky barrier of a Schottky barrier diode.

This application is directed to integrating a field-effect transistor (FinFET) and a Schottky barrier diode on a substrate. A first fin structure and a second fin structure are formed on the substrate. The first fin structure includes a channel portion extending to two stressor portions on two opposite sides of the channel portion, and the second fin structure includes a junction portion. A source structure and a drain structure of the FinFET are formed on the two stressor portions of the first fin structure, respectively. A source metallic material, a drain metallic material, a first metallic material are formed to electrically couple to the source structure, the drain structure, and the junction portion of the second fin structure, respectively, thereby providing a Schottky junction between the junction portion of the second fin structure and the first metallic material.

A device including a trench metal oxide field-effect transistor and a Schottky barrier diode physically and functionally integrated into a single, continuous structure, and a method of making such a device. A first transistor includes a first trench, a first channel on one side of the first trench, and a first doped region on the opposite side of the first trench. An optional second transistor is a mirror-image of the first and includes a second trench, a second channel on one side of the second trench, and a second doped region on the opposite side of the second trench. The Schottky barrier diode is shared by the first and second trench transistors and includes a Schottky material located adjacent to and overlapping the first and second doped regions. An electrical terminal may connect first and second sources and the Schottky barrier diode.

A semiconductor structure includes a Schottky diode structure, which includes: a first trench extending through a first N-type semiconductor layer and being disposed in the first N-type semiconductor layer; a first insulating layer disposed in the first trench; two polysilicon layers or metal silicide layers disposed in the first trench, wherein an upper one and a lower one of the polysilicon layers or metal silicide layers are disposed in parallel; a first P-type protective layer, which is grounded and disposed on a bottom of the first trench, and contacts the first insulating layer and a bottom surface of the lower one of the polysilicon layers or metal silicide layers; a metal layer respectively disposed as a top surface and a lower bottom surface of the semiconductor structure to form a source and a drain as electrodes for the semiconductor structure to be connected to an external device.

A semiconductor device according to an embodiment includes a semiconductor chip having a transistor region and a diode region, a first conductor, and a second conductor. The semiconductor chip includes a first electrode, a second electrode, a silicon carbide layer between the first electrode and the second electrode, and a gate electrode. The transistor region is provided with a third electrode spaced apart from the first electrode and close to the diode region. One end of the first conductor is in contact with the first electrode, and one end of the second conductor is in contact with the third electrode.