The invention relates to a 3T tandem solar cell, a tandem solar cell module and a method of manufacturing the same. The 3T tandem solar cell according to the invention comprises at least a first solar cell (11, 11) comprising a first absorber layer (11-2, 11-2) disposed between a first electrode (11-1, 11-1) on a side of the first solar cell (11, 11) facing the incident light (100), and a first transparent conductive layer (11-3, 11-3) on a side of the first solar cell (11, 11) facing away from the incident light (100), wherein the first solar cell (11, 11) is disposed on a solar cell (12, 12) having a second absorber layer (12-2, 12-2) disposed between a second electrode (12-1, 12-1) on a side of the second solar cell (12, 12) facing away from the incident light (100) and a second transparent conductive layer (12-3, 12-3) on a side of the second solar cell facing the incident light (100). According to the invention, a connecting layer (13) is arranged between the first and the second solar cell (11, 11, 12, 12), wherein the connecting layer (13) forms an electrically conductive connection between the first and the second solar cell (11, 11, 12, 12), and wherein the connecting layer (13) comprises an electrically conductive one-piece conductive element (13-3, 13-3) configured and arranged to form the electrically conductive connection and wherein the conductive element (13-3, 13-3) is embedded in an embedding means (13-2) while maintaining contact points (K1, K2, K3, K4, K5) respectively to the first and to the second transparent conductive layer (11-3, 11-3, 12-3, 12-3) and is connected to or integrally forms a third electrode (13-1, 13-1) of the at least one tandem solar cell (10, 10).

The invention relates to a 3T tandem solar cell, a tandem solar cell module and a method of manufacturing the same. The 3T tandem solar cell according to the invention comprises at least a first solar cell (11, 11) comprising a first absorber layer (11-2, 11-2) disposed between a first electrode (11-1, 11-1) on a side of the first solar cell (11, 11) facing the incident light (100), and a first transparent conductive layer (11-3, 11-3) on a side of the first solar cell (11, 11) facing away from the incident light (100), wherein the first solar cell (11, 11) is disposed on a solar cell (12, 12) having a second absorber layer (12-2, 12-2) disposed between a second electrode (12-1, 12-1) on a side of the second solar cell (12, 12) facing away from the incident light (100) and a second transparent conductive layer (12-3, 12-3) on a side of the second solar cell facing the incident light (100). According to the invention, a connecting layer (13) is arranged between the first and the second solar cell (11, 11, 12, 12), wherein the connecting layer (13) forms an electrically conductive connection between the first and the second solar cell (11, 11, 12, 12), and wherein the connecting layer (13) comprises an electrically conductive one-piece conductive element (13-3, 13-3) configured and arranged to form the electrically conductive connection and wherein the conductive element (13-3, 13-3) is embedded in an embedding means (13-2) while maintaining contact points (K1, K2, K3, K4, K5) respectively to the first and to the second transparent conductive layer (11-3, 11-3, 12-3, 12-3) and is connected to or integrally forms a third electrode (13-1, 13-1) of the at least one tandem solar cell (10, 10).

Transport layers with clusters and a gap fill layer are described. In an embodiment, a solar cell includes a hole transport layer, a perovskite absorber layer and an electron transport layer. In such an embodiment, the electron transport layer includes clusters and a gap fill layer to improve the overall cohesion and mechanical strength of the transport layer while also maintaining good electrical performance.

The invention relates to the technical field of solar cells, in particular to a three-dimensional framework silicon/perovskite tandem solar cell and its preparation method. The three-dimensional framework silicon/perovskite tandem solar cell comprises a formal structure or a trans structure; a p-type amorphous silicon layer, a top electrode light-transmitting layer, an n-type transmission layer, a perovskite thin film, a p-type transmission layer, a buffer layer and a transparent electrode which are sequentially laminated on a substrate from bottom to top; when it is in a trans structure, it comprises a p-type silicon nanowire, an i-type intrinsic amorphous silicon layer, an n-type amorphous silicon layer, a top electrode light-transmitting layer, a p-type transmission layer, a perovskite thin film. The present invention can improve the absorption efficiency of the cell for incident light, broaden the absorption spectrum, and further improve the photoelectric conversion efficiency of the solar cell.

The present disclosure provides a MULTIJUNCTION solar cell structure including a substrate and a plurality of subcells stacked on the substrate. The plurality of subcells include an InGaAs subcell, the InGaAs subcell includes an InjGaAs base region and an InjGaAs emitter region disposed in a direction away from the substrate, and a multiple quantum well (MQW) structure disposed between the InjGaAs base region and the InjGaAs emitter region. The InjGaAs base region and the InjGaAs emitter region are respectively doped with a first and second conductivity types. The MQW structure includes alternately stacked InxGaAs quantum well layers and InkGaAsPy barrier layers, and a InwGaAsPz step barrier layer disposed between a InxGaAs quantum well layer and a InkGaAsPy barrier layer. A bandgap of the InwGaAsPz step barrier layer lies between a bandgap of the InxGaAs quantum well layer and a bandgap of the InkGaAsPy barrier layer.

The present disclosure provides a MULTIJUNCTION solar cell structure including a substrate and a plurality of subcells stacked on the substrate. The plurality of subcells include an InGaAs subcell, the InGaAs subcell includes an InjGaAs base region and an InjGaAs emitter region disposed in a direction away from the substrate, and a multiple quantum well (MQW) structure disposed between the InjGaAs base region and the InjGaAs emitter region. The InjGaAs base region and the InjGaAs emitter region are respectively doped with a first and second conductivity types. The MQW structure includes alternately stacked InxGaAs quantum well layers and InkGaAsPy barrier layers, and a InwGaAsPz step barrier layer disposed between a InxGaAs quantum well layer and a InkGaAsPy barrier layer. A bandgap of the InwGaAsPz step barrier layer lies between a bandgap of the InxGaAs quantum well layer and a bandgap of the InkGaAsPy barrier layer.

A photovoltaic system comprises a photovoltaic cell, a substrate, and a light-conversion layer. The photovoltaic cell converts incident light into electricity and is responsive to a range of frequencies of incident light that is less than all frequencies of the incident light. The substrate is disposed between the photovoltaic cell and the incident light so that the incident light passes through the substrate to illuminate the photovoltaic cell. The light-conversion layer is disposed on the substrate so that incident light illuminates the light-conversion layer and the light-conversion layer converts a broad frequency band of incident light outside the range to light within the range and is emitted toward the photovoltaic cell to illuminate the photovoltaic cell with converted light.

A photovoltaic device includes a plurality of photovoltaic cells coupled in series, the photovoltaic cells including a first contact layer disposed over a first substrate, a first charge transport layer (CTL) disposed over the first contact layer, an absorber layer disposed over the first CTL, a second CTL disposed over the absorber layer, and an ultraviolet (UV) blocking layer comprising a first layer formed on a first side of the first substrate and a second layer formed over the first layer, wherein a refractive index (RI) between the first layer and the first substrate is less than or equal to 1.3, and an RI between the second layer and the first layer is from about 0.75 and about 1.5

The embodiments of the present disclosure relate to the field of photovoltaics, and provide a solar cell, a preparing method for the same, and a photovoltaic module, which can at least improve cell efficiency. The solar cell comprises: a substrate having a front surface and a back surface opposite each other; a doped region formed in the front surface of the substrate, where the doped region comprises first doped regions in the front surface corresponding to the metal regions; first electrodes disposed over the substrate corresponding to the metal regions and electrically connected to the first doped regions; a passivation contact structure disposed on the back surface of the metal regions; second electrodes disposed over the passivation contact structure corresponding to the metal regions and electrically connected to the passivation contact structure.

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell has a stacked structure in the first direction including: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a selective passivation layer, and one or more electrodes. The selective passivation layer covers a portion of a surface of the substrate away from the intrinsic amorphous silicon layer and includes a plurality of passivation contact structures arranged at intervals in a second direction. Each passivation contact structure includes a tunneling layer and a second doped conductive layer stacked in the first direction. The electrodes are formed on a surface of the selective passivation layer away from the substrate and are in ohmic contact with second doped conductive layers.