A flexible display device including a substrate; a driving element layer including a plurality of thin film transistors on the substrate; a display element layer including organic light-emitting diodes electrically connected to the thin film transistors on the driving element layer; a light transmissive layer on the display element layer and configured to adjust a neutral plane of the flexible display device to lie at the driving element layer and the display element layer when the flexible display device is bent; and a back plate film attached to a back side of the substrate and having a cut portion formed in a center region where the flexible display device is bent.

An object is to provide an imaging device in which a circuit for reading a signal is provided in a pixel region. The imaging device includes a first pixel and a second pixel. The first pixel is capable of outputting a first signal output from a pixel circuit included in the first pixel or a second signal input from the first pixel in the previous stage, to the first pixel or the second pixel in the next stage. The second pixel is capable of outputting, to the outside, the first signal or the second signal, which is input from the first pixel in the previous stage, or a third signal output from a pixel circuit included in the second pixel.

Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.

This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.

An imaging element which is formed by sequentially stacking at least an anode, an anode-side buffer layer, a photoelectric conversion layer, and a cathode, in which the anode-side buffer layer includes a material having structural formula

##STR00001##

in which thiophene and carbazole are combined.

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×10.sup.10 s.sup.−1 to 1×10.sup.16 s.sup.−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductors.

An optical detector (110) is disclosed. The optical detector (110) comprises: an optical sensor (112), having a substrate (116) and at least one photosensitive layer setup (118) disposed thereon, the photosensitive layer setup (118) having at least one first electrode (120), at least one second electrode (130) and at least one photovoltaic material (140) sandwiched in between the first electrode (120) and the second electrode (130), wherein the photovoltaic material (140) comprises at least one organic material, wherein the first electrode (120) comprises a plurality of first electrode stripes (124) and wherein the second electrode (130) comprises a plurality of second electrode stripes (134), wherein the first electrode stripes (124) and the second electrode stripes (134) intersect such that a matrix (142) of pixels (144) is formed at intersections of the first electrode stripes (124) and the second electrode stripes (134); and at least one readout device (114), the readout device (114) comprising a plurality of electrical measurement devices (154) being connected to the second electrode stripes (134) and a switching device (160) for subsequently connecting the first electrode stripes (124) to the electrical measurement devices (154).

The invention relates to a multi-junction device comprising a) a first photoactive region comprising a layer of a first photoactive material, b) a second photoactive region comprising a layer of a second photoactive material, and c) a charge recombination layer disposed between the first and second photoactive regions, wherein the charge recombination layer comprises a charge recombination layer material, wherein one of the first and second photoactive materials comprises at least one A/M/X material; wherein the other of the first and second photoactive materials comprises at least one A/M/X material or a compound which is a photoactive semiconductor other than an A/M/X material; wherein each A/M/X material is a crystalline compound of formula (I) [A].sub.a[M].sub.b[X].sub.c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and wherein the charge recombination layer material has a refractive index, η(λ), at a wavelength, λ, of at least 2, wherein λ is a wavelength of from 500 nm to 1200 nm.

An imaging element includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a first semiconductor material layer 23B.sub.1 and a second semiconductor material layer 23B.sub.2 are formed from the first electrode side, and the second semiconductor material layer 23B.sub.2 is in contact with the photoelectric conversion layer 23A. The photoelectric conversion unit further includes an insulating layer 82 and a charge accumulation electrode 24 disposed apart from the first electrode 21 so as to face the first semiconductor material layer 23B.sub.1 via the insulating layer 82. When the carrier mobility of the first semiconductor material layer 23B.sub.1 is represented by μ.sub.1, and the carrier mobility of the second semiconductor material layer 23B.sub.2 is represented by μ.sub.2, μ.sub.2<μ.sub.1 is satisfied.

Embodiments include radiative heat-blocking materials comprising one or more non-fullerene components and optionally one or more hole-scavenging components. Embodiments further include windows comprising a transparent photovoltaic device configured to transmit visible light and absorb infrared radiation, wherein an active layer of the photovoltaic device comprises the radiative heat-blocking material. Embodiments further include other devices based on the radiative heat-blocking materials.