An imaging system includes a light source that, in operation, emits an emitted light containing a near-infrared light in a first wavelength region, an image sensor, and a double-band pass filter that transmits a visible light in at least a part of a wavelength region out of a visible region and the near-infrared light in the first wavelength region. The image sensor includes light detection cells, a first filter that selectively transmits the near-infrared light in the first wavelength region, second to fourth filters that selectively transmit lights in second to fourth wavelength regions, respectively, which are contained in the visible light, and an infrared absorption filter. The infrared absorption filter faces the second to fourth filters and absorbs the near-infrared light in the first wavelength region.

An image sensor array formed on a flexible first substrate is supported by a flexible second substrate attached thereto. The second substrate has a top surface with an adhesive thereon for attaching the substrates together. The adhesive is on a portion of the second substrate directly beneath the image sensor array to allow selective formation of the second substrate.

An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate that includes a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type different from the first conductivity type; and a first transistor that includes, as a source or a drain, a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region that is an impurity region of the second conductivity type, the charge accumulation region being configured to accumulate the signal charge; and a blocking structure that is located between the charge accumulation region and the first transistor, and the blocking structure includes a second impurity region of the second conductivity type.

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.

The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.

A sensor unit detects beams. The sensor unit has organic photoreceptors, and at least one computing unit. Respective photoreceptors of the organic photoreceptors are configured to generate a voltage depending on a type and intensity of an incident radiation. The respective photoreceptors of the organic photoreceptors are directly connected to the at least one computing unit as a respective signal source. The at least one computing unit is configured to generate an image from information ascertained from the photoreceptors or from electric pulses.

The present disclosure relates to a solid-state imaging device and a manufacturing method, and an electronic apparatus that allow the reduction of manufacturing steps to reduce costs. The solid-state imaging device includes a sensor substrate in which a plurality of pixels is formed, and a logic substrate in which at least a logic circuit is formed. Then, the sensor substrate and the logic substrate form a stacked structure by a step of picking out and bonding the sensor substrate that is a non-defective product to a logic wafer in which a plurality of the logic circuits is formed before the logic substrate is separated as an individual piece. The present technology can be applied to, for example, a back-illuminated stacked CMOS image sensor.

An imaging device includes pixels. Each of the pixels includes a counter electrode, a pixel electrode, and a photoelectric conversion layer that includes carbon nanotubes. The pixels include a first pixel and a second pixel adjacent to the first pixel. The pixel electrode of the first pixel and the pixel electrode of the second pixel are isolated from each other. Carbon nanotubes included in the photoelectric conversion layer in at least one selected from the group consisting of the first pixel and the second pixel include at least one first carbon nanotube that satisfies A<B, where A denotes length of a carbon nanotube in a direction in which the pixel electrode of the first pixel and the pixel electrode of the second pixel are arranged and B denotes length of a gap between the pixel electrode of the first pixel and the pixel electrode of the second pixel.

An imaging element includes a photoelectric conversion section 23 including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked. An inorganic oxide semiconductor material layer 23B including a first layer 23C and a second layer 23D, from side of the first electrode, is formed between the first electrode 21 and the photoelectric conversion layer 23A, and ρ.sub.1≥5.9 g/cm.sup.3 and ρ.sub.1−ρ.sub.2≥0.1 g/cm.sup.3 are satisfied, where ρ.sub.1 is an average film density of the first layer 23C and ρ.sub.2 is an average film density of the second layer 23D in a portion extending for 3 nm from an interface between the first electrode 21 and the inorganic oxide semiconductor material layer 23B.

According to an aspect, a detection device includes: a substrate; an anode electrode provided on the substrate; a cathode electrode that is provided on the same layer as that of the anode electrode and is adjacent to the anode electrode; and an organic semiconductor layer that has a structure in which a p-type semiconductor layer and an n-type semiconductor layer coexist and that is provided so as to cover the anode electrode and the cathode electrode.

An imaging device includes a pixel. The pixel includes a charge accumulator containing an impurity of a first conductivity type, a first transistor, a second transistor, a first well region containing an impurity of a second conductivity type, and a second well region containing an impurity of the first conductivity type. The charge accumulator accumulates charge generated through photoelectric conversion. The first transistor includes a first gate electrode and a first diffusion region containing an impurity of the first conductivity type. The second transistor includes a second gate electrode and a second diffusion region containing an impurity of the second conductivity type. The first transistor and the charge accumulator are located in the first well region, and the second transistor is located in the second well region. A distance between the charge accumulator and the second transistor is larger than a distance between the charge accumulator and the first transistor.