There is provided imaging devices and methods of forming the same, including a stacked structure body including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer, where the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten, and where the second electrode is transparent and electrically conductive and has absorption characteristics of 20% or more at a wavelength of 300 nm.

The present invention pertains to a material for a photoelectric conversion element for use in an imaging element, the material containing a compound represented by formula (1) (in formula (1), R.sub.1 and R.sub.2 independently represent a substituted or unsubstituted fused heterocyclic aromatic group). The material can provide a photoelectric conversion element having excellent hole and electron leakage preventing properties, hole and electron transport properties, heat tolerance to processing temperatures, and visible light transparency.

A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

The invention relates to different aspects of a photodetector (1-8) for detecting electromagnetic radiation in a spectrally selective manner, comprising a first optoelectronic component (100-106, 108) for detecting a first wavelength of the electromagnetic radiation. The first optoelectronic component (100-106, 108) has a first optical cavity and at least one detection cell (21, 21a, 22, 22a, 23) arranged in the first optical cavity. The first optical cavity is made of two mutually spaced parallel mirror layers (11, 11a, 11′, 12, 12a). The length of the first optical cavity is configured such that for the first wavelength, a resonant wave (13, 13a), which is associated with said wavelength, of the i-th order is formed in the first optical cavity. Each detection cell (21, 21a, 22, 22a, 23) has a photoactive layer (210, 220, 230), each photoactive layer being arranged within the first optical cavity such that precisely one vibration maximum of the resonant wave (13, 13a) lies within the photoactive layer (210, 220, 230). According to a first aspect of the invention, the order of the resonant wave (13, 13a) of the first optoelectronic component (100-106, 108) is greater than 1, and at least one optically absorbent intermediate layer (30, 31) and/or at least one optically transparent contact layer (50) is arranged in the optical cavity. According to a second aspect, the first optoelectronic component (110, 110′) has at least one optically transparent spacer layer (40) in addition to the detection cell (21, 21′), said spacer layer being arranged in the first optical cavity between one of the mirror layers (11, 12) and the detection cell (21, 21′), and at least one outer contact (60, 60′), which adjoins an outer surface of the detection cell (21, 21′) and consists of an electrically conductive material.

A lower electrode of a PIN diode and a second protective layer covering the PIN diode are formed not using separate mask processes, but using the same mask process using the same mask, thereby reducing the number of mask processes and thus increasing process efficiency. Further, the lower electrode of the PIN diode is patterned and then the second protective film covering the PIN diode is patterned such that both the former patterning and the latter patterning are carried out using a single mask process, thereby reduce increase in defects due to foreign materials or stains.

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

The present application provides a liquid crystal display panel and an liquid crystal display device, which includes an array substrate, a color film substrate, liquid crystals, and a fingerprint identification module, the array substrate is disposed on one side facing the user; the liquid crystal is positioned between the array substrate and the color film substrate; the fingerprint identification module is formed on one side of the array substrate facing the liquid crystal; the fingerprint identification module includes a thin film transistor and a photodiode for convert light energy into electrical energy, the thin film transistor is electrically connected to an output end of the photodiode.

A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

According to an aspect of the present disclosure, a detection device includes: a substrate; a plurality of first optical sensors provided in a detection area of the substrate and comprising an organic material layer having a photovoltaic effect; and at least one or more second optical sensors provided on the substrate and comprising an inorganic material layer having a photovoltaic effect.

The present disclosure provides an image sensor, which may include a driving layer, a negative electrode layer formed in the driving layer, a N-region layer formed above the negative electrode layer. The N-region layer includes multiple cylindrical structures formed of semiconductor materials. The image sensor may also include a light absorption layer formed above the N-region layer. The light absorption layer is composed of a multi-layer structure including a P-region layer formed using quantum dot semiconductor materials. The image sensor may further include a positive electrode layer formed above the light absorption layer and configured to receive incoming light signals.