There is provided a multi junction photovoltaic device comprising a first sub-cell comprising a photoactive region comprising a layer of perovskite material, a second sub-cell comprising a photoactive silicon absorber. and an intermediate region disposed between and connecting the first sub-cell and the second sub-cell. The intermediate region comprises an interconnect layer, the interconnect layer comprising a two-phase material comprising elongate (i.e. filament like) silicon nanocrystals embedded in a silicon oxide matrix.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode 15a and a second electrode 18 facing each other; and a photoelectric conversion layer 17 provided between the first electrode 15a and the second electrode 18, and including a first quinacridone derivative represented by a formula (1). ##STR00001##

A photoelectric conversion device includes a first electrode and a second electrode facing each other, an organic photoelectric conversion layer between the first electrode and the second electrode, and a charge auxiliary layer between the first electrode and the organic photoelectric conversion layer. The organic photoelectric conversion layer is configured to absorb light in at least a portion of a wavelength spectrum of incident light and to convert the absorbed light into an electrical signal. The charge auxiliary layer includes a metal and an oxide. The oxide may be an oxide material that excludes silicon oxide such that the charge auxiliary layer does not include silicon oxide.

A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.

A photovoltaic device includes a first group of photovoltaic cells of a first cell type, the first group of photovoltaic cells operable to produce a first current and a first voltage, and a second group of photovoltaic cells of a second cell type that is different than the first cell type, the second group of photovoltaic cells operable to produce a second current and a second voltage. A first power electronics unit is connected to the first group of photovoltaic cells, and a second power electronics unit is connected to the second group of photovoltaic cells. The second power electronics unit is separate from and not communicating with the first power electronics unit. A control device is operable to vary a first property of the first power electronics unit to vary the first current and the first voltage and to vary a second property of the second power electronics unit to vary the second voltage and the second current independent of the first voltage and the first current.

A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 μm or less than 2 μm. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.

An imaging sensor includes a photoelectric conversion element, and a plurality of transistors connected to the photoelectric conversion element. The plurality of transistors are configured to transmit charges generated by the photoelectric conversion element. The plurality of transistors includes at least one transistor that includes a silicon semiconductor layer and at least one other transistor that includes an oxide semiconductor layer.

A light conversion package for a semiconductor light source includes a light conversion block, a substrate, and an interconnector. The light conversion block is positioned to receive incident light from the semiconductor light source and acts to convert the incident light to light having a different spectral distribution. The interconnector attaches the light conversion block to the substrate and limits a thermal resistance between the light conversion block and the substrate so that the substrate can efficiently sink heat from the light conversion block. The interconnector and the substrate together may still provide high reflectivity.

A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.