The following configuration is adopted in order to provide a highly reliable optival sensor device which enhances the reliability of devices without making the devices unsuitable for size and thickness reductions. The light sensor comprises an element-mounting portion (3) having a cavity and a lid member closely attached thereinto, the lid member being composed of: a window (2) constituted of a phosphate-based glass to which properties approximate to a spectral luminous efficacy properties have been imparted by compositional control; and a frame (1) constituted of a phosphate-based glass having light-shielding properties. The lid member is a Laminated glass member obtained by cutting the phosphate-based glass having the spectral luminous efficacy properties into individual pieces, fitting the glass piece into the opening of the phosphate-based glass (1) having light-shielding properties, the opening having been formed so as to have a size approximately equal to the cavity size, and melting and integrating the glasses member.

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

A photodetector cell includes a substrate having a semiconductor surface layer, and a trench in the semiconductor surface layer. The trench has tilted sidewalls including a first tilted sidewall and a second tilted sidewall. A pn junction, a PIN structure, or a phototransistor includes an active p-region and an active n-region that forms a junction including a first junction along the first tilted sidewall to provide a first photodetector element and a second junction spaced apart from the first junction along the second tilted sidewall to provide a second photodetector element. At least a p-type anode contact and at least an n-type cathode contact contacts the active p-region and active n-region of the first photodetector element and second photodetector element. The tilted sidewalls provide an outer exposed or optically transparent surface for passing incident light to the first and second photodetector elements for detection of incident light.

An optical sensor arrangement, in particular an optical proximity sensor arrangement comprises a three-dimensional integrated circuit further comprising a first layer comprising a light-emitting device, a second layer comprising a light-detector and a driver circuit. The driver circuit is electrically connected to the light-emitting device and to the light-detector to control the operation of the light-emitting device and the light-detector. A mold layer comprising a first light-barrier between the light-emitting device and the light-detector configured to block light from being transmitted directly from the light-emitting device to the light-detector.

A two-terminal detector has a back-to-back p/n/p SWIR/MWIR stack structure, which includes P-SWIR absorber, N-SWIR, wide bandgap bather, N-MWIR absorber, and P-MWIR layers, with contacts on the P-MWIR and P-SWIR layers. The junction between the SWIR layers and the junction between the MWIR layers are preferably passivated. The detector stack is preferably arranged such that a negative bias applied to the top of the stack reverse-biases the MWIR junction and forward-biases the SWIR junction, such that the detector collects photocurrent from MWIR radiation. A positive bias forward-biases the MWIR junction and reverse-biases the SWIR junction, such that photocurrent from SWIR radiation is collected. A larger positive bias induces electron avalanche at the SWIR junction, thereby providing detector sensitivity sufficient to provide low light level passive amplified imaging. Detector sensitivity in this mode is preferably sufficient to provide high resolution 3-D eye-safe LADAR imaging.

To provide an imaging device capable of high-speed reading. The imaging device includes a photodiode, a first transistor, a second transistor, a third transistor, and a fourth transistor. The back gate electrode of the first transistor is electrically connected to a wiring that can supply a potential higher than a source potential of the first transistor and a potential lower than the source potential of the first transistor. The back gate electrode of the second transistor is electrically connected to a wiring that can supply a potential higher than a source potential of the second transistor. The back gate electrode of the third transistor is electrically connected to a wiring that can supply a potential higher than a source potential of the third transistor and a potential lower than the source potential of the third transistor.

A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

A photodetector according to an embodiment includes; at least one photodiode including: a first electrode; an n-type semiconductor layer disposed on the first electrode; a first p-type semiconductor layer disposed above the n-type semiconductor layer, the first p-type semiconductor layer including a first surface region and a second surface region; a second p-type semiconductor layer disposed in the first surface region of the first p-type semiconductor layer, the second p-type semiconductor layer having a higher p-type impurity concentration than the first p-type semiconductor layer; and a second electrode disposed on the second surface region of the first p-type semiconductor layer and on the second p-type semiconductor layer.