An image capture device to produce images of an object in contact with or in immediate proximity to the device comprises a sensor and illumination means capable of emitting a first type of radiation to illuminate an object in order to obtain an image thereof, the sensor comprising pixels that are sensitive to a second type of radiation dependent on the first type of radiation emitted by the illumination means. The sensor is formed on a monolithic substrate comprising multiple passages that are transparent to the first type of radiation. The illumination means comprise at least one source of the first type of radiation positioned so as to face one of the passages. The invention also relates to a method for producing this device.

The present invention provides an X-ray detector comprising: a sensor panel which has flexibility; at least one first flexible circuit unit which is attached along a first edge of the sensor panel and has a gate IC mounted therein; at least one second flexible circuit unit which is attached along a second edge of the sensor panel and has a readout IC mounted therein; a third flexible circuit unit which is attached to one end of the first edge; and a main circuit unit which is connected to the third flexible circuit unit and has a timing controller mounted thereon, wherein a gate control signal output from the main circuit unit is provided to the gate IC via the third flexible circuit unit.

A detection device for a CT system comprises a low-energy detector assembly; and a high-energy detector assembly disposed under the low-energy detector assembly. The high-energy detector assembly comprises: a plurality of rows of high-energy detectors arranged at predetermined intervals. With the detection device, detectors and data acquisition units are greatly reduced. A high-resolution three-dimensional CT image is acquired while high-accuracy hazardous article alarm is achieved. The cost of manufacture of the system is greatly decreased while high system performance is ensured.

Disclosed is an improvement of strength of adhesion between a photoconductive layer and a substrate. The image sensor includes a first electrode and a protruding pattern formed around the first electrode on the substrate, a protective film having an protruded surface formed on the protruding pattern, the photoconductive layer formed on the protective film, and a second electrode formed on the photoconductive layer.

A semiconductor device includes a first semiconductor layer; an insulation member layer formed on the first semiconductor layer; a transistor disposed in an upper portion of the insulation member layer; a first interlayer insulation film covering the transistor; a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member. The first penetrating electrode is electrically connected only to the first semiconductor layer.

The disclosure is directed at a method and apparatus for producing a detector element. The detector element includes first and second electrodes located on opposites sides of a semiconductor layer. The first and second electrodes are staggered with respect to each other in a plane perpendicular to the semiconductor layer.

The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface of the sensing layer.

This invention relates to a panel for an X-ray detector comprising a bismuth oxyiodide (BiOI) single crystal material, or a material derived therefrom, as well as a bismuth oxyiodide single crystal material useful in such an X-ray detector, as well as a method for preparing the same. In one aspect, the present invention provides a bismuth oxyiodide (BiOI) single crystal material for use in a panel for an X-ray detector having a length (L) dimension of at least 1 mm, a width (W) dimension of at least 1 mm, and a thickness (T) dimension of at least 0.12 mm.

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode, a sensing layer and a second electrode. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode. The second electrode is disposed on the sensing layer. The sensing layer has a surface adjacent to the second electrode. In a cross-sectional view, the second electrode has a length smaller than a length of the surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The second electrode is formed on the sensing layer.