An apparatus is provided for modulating the photon output of a plurality of free standing quantum dots. The apparatus comprises a first electron injection layer (210, 310, 410) disposed between a first electrode (212, 312, 412) and a layer (208, 308, 408) of the plurality of free standing quantum dots. A hole transport layer (206, 306, 406) is disposed between the layer (208, 308, 408) of the plurality of quantum dots and a second electrode (204, 304, 404). A light source (224, 324, 424) is disposed so as to apply light to the layer (208, 308, 408) of the plurality of free standing quantum dots. The photon output of the layer (208, 308, 408) of the plurality of free standing quantum dots is modulated by applying a voltage to the first and second electrodes (212, 312, 412, 204, 304, 404). Electrons excited to a higher energy state within layer (208, 308, 408) of the free standing quantum dots by the light source (224, 324, 424) are prevented from returning to a lower state by electrons from the electric field of the applied voltage, and therefore the free standing quantum dots are prevented from emitting a photon. The voltage source (216, 316, 416) may be modulated to vary the photon output.

The invention relates to a method for classifying a light-emitting semiconductor component (301) for an image sensor application, wherein the semiconductor component (301) is designed as a light source for an image sensor (302), comprising the following steps: providing the light-emitting semiconductor component (301); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component (301) during operation: R=qR().Math.S()d.Math.texp, G=qG().Math.S()d.Math.texp, B=qB().Math.S()d.Math.texp, wherein qR(), qG(), and qB() are spectral sensitivities of a red, green, and blue color channel of the image sensor (302), S() is the emission spectrum of the light-emitting semiconductor component (301), texp is an exposure time, and designates a wavelength; classifying the light-emitting semiconductor component (301) into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least one of the parameters R, G, and B. The invention further relates to an image sensor application.

An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.

A light emitting element includes a semiconductor layer; an upper electrode disposed on an upper surface of the semiconductor layer; and a lower electrode disposed on a lower surface of the semiconductor later. In a plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape along an outer periphery of the semiconductor layer, a first pad portion connected to a first side among four sides of the first extending portion, a second pad portion connected to a second side that is opposite to the first side, among the four sides of the first extending portion, and a second extending portion and a third extending portion, each disposed in a region surrounded by the first extending portion, the second extending portion and the third extending portion each connecting the first pad portion and the second pad portion.

The present disclosure relates to a method of making an optical assembly. An optical device is secured in a fixture, the optical device having an optical surface, wherein a silicone film is positioned with respect to the optical surface, the silicone film having a distal surface relative to the optical surface. The method includes, among other features, imprinting the distal surface of the silicone film to create a surface imprint in the distal surface of the silicone film.

A method and apparatus for measuring color coordinates of a light emitting device. The color coordinate measuring apparatus includes a rail on which a substrate is mounted, the substrate having a plurality of light emitting devices (LEDs) formed thereon, a transfer device disposed under the rail and configured to move toward or away from a target region of the substrate, a plurality of electrode pins disposed on the transfer device and configured to respectively contact electrodes of the plurality of light emitting devices in the target region at the same time when the transfer device approaches the target region, a controller configured to sequentially supply electric power to the plurality of electrode pins, and a measurement unit disposed above the rail and configured to be placed above the target region in which the plurality of electrode pins is brought into contact with the electrodes of the plurality of light emitting devices.

A method for forming a phosphor material on a surface of a target is provided, which includes the steps of: providing a chamber for receiving the phosphor material constituted by a plurality of particles, wherein a grid is disposed on or beneath a surface constituted by the phosphor material in the chamber, and the grid has a plurality of fine lines S.sub.N each having opposite first and second ends, N being a positive integer greater than 1; exposing the surface of the target to the phosphor material; and creating a charge on the plurality of particles, generating an electric field between the chamber and the surface of the target and oscillating the plurality of fine lines, so as to drive the plurality of particles toward the surface of the target and to be deposited on the surface of the target.

The present invention relates to a printed circuit board having an improved heat radiation performance, and a light-emitting device including the same. A printed circuit board according to an embodiment of the present invention comprises: a first electrode layer, a first insulation layer disposed on one surface of the first electrode layer, the first insulation layer including at least a cavity formed through a part thereof; and a second electrode layer disposed on the first insulation layer, wherein at least a part of the one surface of the first electrode layer can be exposed to the outside through the cavity.

According to one embodiment, a sensor includes a first light-emitting region, a second light-emitting region, and a light receiving element. At least one of at least a portion of a first light or at least a portion of a second light is incident on the light receiving element. The first light is emitted from the first light-emitting region. The second light is emitted from the second light-emitting region. A second position of the second light-emitting region in a first direction is between a first position of the first light-emitting region in the first direction and a light receiving position of the light receiving element in the first direction. The first direction is from the first light-emitting region toward the second light-emitting region.

A nitride semiconductor light-emitting element includes an N-type cladding layer, an N-side guide layer, an active layer, a P-type cladding layer, and a P-side guide layer (an upper P-side guide layer) and an electron blocking layer that are disposed between the active layer and the P-type cladding layer. The N-type cladding layer, the N-side guide layer, the P-side guide layer, the electron blocking layer, and the P-type cladding layer contains Al. The active layer includes an N-side barrier layer, a well layer disposed above the N-side barrier layer, and a P-side barrier layer disposed above the well layer. The average band gap energy of the P-side barrier layer is greater than the average band gap energy of the N-side barrier layer. A thickness of the P-side barrier layer is less than a thickness of the N-side barrier layer.