H01L27/16

Methods of preparing single-walled carbon nanotube networks

Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.

Thermoelectric module

A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.

THERMOELECTRIC MODULE FOR POWER GENERATION AND PRODUCTION METHOD THEREFOR
20210057629 · 2021-02-25 ·

The invention relates to a thermoelectric module for thermoelectric current generation, in particular in an exhaust gas system of an internal combustion engine, with a base plate and a plurality of thermocouples each with two legs, the thermocouples being electrically connected in series and mounted on the base plate. The invention provides that the base plate consists of a metallic material. This enables a low-cost production, allows substantially larger formats and makes the thermoelectric module mechanically much less sensitive than a conventional base plate made of ceramic. Furthermore, the invention includes a corresponding production method.

Triboluminescence isotope battery

A triboluminescence isotope battery can include a housing defining a chamber, and one or more energy conversion devices. Each energy conversion device can include a holder, a cantilever beam, a triboluminescence component, a first photoelectric conversion component, a radioactive source, a first charge collecting component, a second charge collecting, a first thermoelectric conversion component, and a heat dissipation component.

THERMOCOUPLE STRUCTURE, HEAT TREATMENT APPARATUS, AND METHOD OF MANUFACTURING THERMOCOUPLE STRUCTURE

A thermocouple structure according to one aspect of the present disclosure includes a first element wire, second element wires formed of a material different from the first element wire, an insulating covering member covering at least one of the first element wire and the second element wires, and a protective tube accommodating the first element wire and the second element wire. Each of the second element wires is bonded to a different position on the first element wire.

Patterned focal plane arrays of carbon nanotube thin film bolometers with high temperature coefficient of resistance and improved detectivity for infrared imaging

A method of preparation of focal plane arrays of infrared bolometers includes processing carbon nanotubes to increase a temperature coefficient of resistance (TCR), followed by patterning to form focal plane arrays for infrared imaging.

Integrated circuit components incorporating energy harvesting components/devices, and methods for fabrication, manufacture and production of integrated circuit components incorporating energy harvesting components/devices
10896929 · 2021-01-19 · ·

An integrated circuit system, structure and/or component is provided that includes an integrated electrical power source in a form of a unique, environmentally-friendly energy harvesting element or component. The energy harvesting component provides a mechanism for generating autonomous renewable energy, or a renewable energy supplement, in the integrated circuit system, structure and/or component. The energy harvesting element includes a first conductor layer, a low work function layer, a dielectric layer, and a second conductor layer that are particularly configured to promote electron migration from the low work function layer, through the dielectric layer, to the facing surface of the second conductor layer in a manner that develops an electric potential between the first conductor layer and the second conductor layer. An energy harvesting component includes a plurality of energy harvesting elements electrically connected to one another to increase a power output of the electric harvesting component.

Reverse body biasing of a transistor using a photovoltaic source

A metal oxide semiconductor (MOS) transistor has a source terminal, a drain terminal, a gate terminal and a body terminal. The source terminal is connected to receive a supply voltage and the body terminal is connected to receive a reverse body bias voltage. A photovoltaic circuit has a first terminal connected to the source terminal of the MOS transistor and a second terminal connected to the body terminal of the MOS transistor. The photovoltaic circuit converts received photons from the environment to generate the reverse body bias voltage.

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
20210002129 · 2021-01-07 · ·

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Selective and direct deposition technique for streamlined CMOS processing

Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.