A display panel includes: a substrate including a first substrate layer which includes a glass material and a second substrate layer contacting the first substrate layer and which includes a polymer material; a thin film transistor disposed on the substrate; and a light emitting element disposed on the thin film transistor.

A method of manufacturing a display apparatus includes: preparing a substrate including a pixel circuit region and a driving circuit region; forming a first active layer at the pixel circuit region; forming a second active layer at the driving circuit region; forming gate electrodes that overlap the first active layer and the second active layer, respectively, with a gate insulating layer disposed therebetween; forming a first insulating layer covering the first and second active layers; forming a first contact hole that passes through the first insulating layer until a portion of the first active layer is exposed; heat-treating the substrate where the first insulating layer, in which the first contact hole is formed, is formed; and forming a second contact hole that passes through the first insulating layer disposed on the heat-treated substrate until a portion of the second active layer is exposed.

Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.

A manufacturing method of a thin film transistor array panel according to an exemplary embodiment of the present invention includes forming an amorphous silicon thin film on a substrate. A lower region of the amorphous silicon thin film is crystallized to form a polycrystalline silicon thin film by irradiating a laser beam with an energy density of from about 150 mj/cm.sup.2 to about 250 mj/cm.sup.2 to the amorphous silicon thin film.

A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Embodiments of the disclosure disclose a transistor with floating gate electrode, a manufacturing method thereof, an application method thereof and a display driving circuit. The transistor with floating gate electrode includes a substrate (1), and a floating gate electrode (3), a source electrode (4), a drain electrode (5) and a control gate electrode (6) disposed on the substrate (1). The transistor with floating gate electrode further comprises a first insulating film (7) and a polysilicon film (8) that are sequentially disposed on the substrate (1), and a channel region (2) is formed in the polysilicon film (8) at a position corresponding to the floating gate electrode (3).

According to one embodiment, a method of manufacturing a semiconductor device comprises forming a semiconductor layer on a substrate, forming a first insulating film on the semiconductor layer, forming a metal layer on the first insulating film, forming a first portion and a second portion in the metal layer, implanting an impurity into the semiconductor layer by using the first portion and the second portion as masks, forming a gate electrode by reducing the second portion in addition to removing the first portion, and implanting an impurity into the semiconductor layer by using the gate electrode as a mask.

An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching transistor and a driving transistor. The switching transistor includes a first insulating layer between a first gate electrode and an oxide semiconductor layer. The driving transistor includes a second gate electrode on an active layer. The first insulating layer is between the active layer and the second gate electrode.

The present invention provides a Low Temperature Poly-silicon TFT substrate structure and a manufacture method thereof. By providing the amorphous silicon layers in the drive TFT area and the display TFT area with different thicknesses, of which the thickness of the amorphous silicon layer in the drive TFT area is smaller, and the thickness of the amorphous silicon layer in the display TFT area is larger, and thus, in the Excimer Laser Annealing process, different crystallization results are generated with the amorphous silicon layers in the drive TFT area and the display TFT area under the function of the laser with the same energy to achieve the control to the grain diameters of the crystals. The polysilicon layer with larger lattice dimension is formed in the drive TFT area in the crystallization process to raise the electron mobility. The fractured crystals of polysilicon layer in the display TFT area can be obtained in the crystallization process for ensuring the uniformity of the grain boundary and raising the uniformity of the current. Accordingly, the electrical property demands for the different TFTs can be satisfied to raise the light uniformity of the OLED.

A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.