A display device includes plurality of light-emitting elements. A plurality of pixel drivers are respectively connected to the light-emitting elements. Each of the plurality of pixel drivers includes a first transistor including a first oxide semiconductor pattern, a second transistor electrically connected to the first transistor and including a second oxide semiconductor pattern, and a capacitor electrically connected to a gate of the first transistor. The first oxide semiconductor pattern has a crystalline structure and the second oxide semiconductor pattern has an amorphous structure.

A display device includes an active layer disposed on a substrate, the active layer including a channel region and a first conductive region, the first conductive region including a first sub-conductive region disposed on a first side of the channel region, and a second sub-conductive region disposed between the first sub-conductive region and the channel region. The first conductive region further includes a first doped layer disposed on the substrate in the first sub-conductive region, a second doped layer disposed on the first doped layer in the first sub-conductive region, disposed on the substrate in the second sub-conductive region, and a third doped layer disposed on the second doped layer in the first sub-conductive region and the second sub-conductive region.

A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

A method of manufacturing a display device includes forming a first amorphous silicon layer on a substrate on which a first area and a second area are defined, forming a mask in the second area on the first amorphous silicon layer, forming a preliminary second amorphous silicon layer on the first amorphous silicon layer and the mask, forming a second amorphous silicon layer by removing a portion of the preliminary second amorphous silicon layer on the mask, removing the mask, and forming a polycrystalline silicon layer by crystallizing the first amorphous silicon layer and the second amorphous silicon layer.

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100 C./hour and to a heat treatment at 600 C. for 80 minutes, and then to a cooling to the room temperature at 100 C./hour.

A semiconductor device includes a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer having a polycrystalline structure over the gate insulating layer, a source electrode and a drain electrode over the oxide semiconductor layer, and an interlayer insulating layer covering the source electrode and the drain electrode and in contact with the oxide semiconductor layer. An S value is greater than or equal to 1.5 V/dec and less than or equal to 2.5 V/dec.