A semiconductor light-emitting device including at least one n-type semiconductor layer, at least one p-type semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is disposed between the at least one p-type semiconductor layer and the at least one n-type semiconductor layer. A ratio of carbon concentration to aluminum concentration in any one semiconductor layer containing aluminum in the semiconductor light-emitting device ranges from 10.sup.4 to 10.sup.2.

A method for fabricating Complementary Metal Oxide Semiconductor (CMOS) compatible contact layers in semiconductor devices is disclosed. In one embodiment, a nickel (Ni) layer is deposited on a p-type gallium nitride (GaN) layer of a GaN based structure. Further, the GaN based structure is thermally treated at a temperature range of 350 C. to 500 C. Furthermore, the Ni layer is removed using an etchant. Additionally, a CMOS compatible contact layer is deposited on the p-type GaN layer, upon removal of the Ni layer.

A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.

An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.

A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.

An LED driving apparatus according to an exemplary embodiment of the present inventive concept may include a rectifier circuit rectifying alternating current (AC) power to generate driving power for operating a plurality of LED arrays; a controller integrated circuit (IC) including a plurality of internal switches connected to respective output terminals of the plurality of LED arrays and controlling a path of a current flowing in the plurality of LED arrays by adjusting operations of the plurality of internal switches according to a magnitude of the driving power; and a current controlling circuit connected to the output terminal of at least one of the plurality of LED arrays and controlling a current flowing in the at least one LED array.

An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer.

Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm.sup.2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

A light source includes a controller configured to turn on or off a plurality of light sources depending on a light period. The controller can be configured to turn on the light sources during each of a plurality of light periods such that the light sources emit a light having a spectrum with a plurality of peaks toward the plant. At least one light period can include a first period and a second period and the first period preceding or following the second period. The controller can adjust the spectrum of the light between the first period and the second period and/or during different light periods.