A display device is disclosed. The display device includes a substrate having a plurality of pixels, wherein each of the plurality of pixels includes at least one light emitting chip, and a structure on one side of at least one of the plurality of pixels. A base material of the light emitting chip is the same as a base material of the structure.

A light-emitting diode is provided, including: a first layer of n-doped Al.sub.X1Ga.sub.(1-X1-Y1)In.sub.Y1N, with X1>0 and X1+Y11; a second layer of p-doped Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N, with X2>0 and X2+Y21; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

Light emitting nanowire devices, in accordance with aspects of the present technology, can include a short period superlattice (SPSL) region underlaying an N-polar multiple quantum well (MQW) region. The short period superlattice (SPSL) region can relax strain in the multiple quantum well (MQW) region. The nanowires can be submicron scale and characterized by red electroluminescence.

A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material, beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 510.sup.17 cm.sup.3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

A red light emitting apparatus includes a first conductivity type semiconductor layer; an active region including a barrier layer and a well layer; a strain-control layer disposed between the first conductivity type semiconductor layer and the active region; a superlattice layer disposed between the strain-control layer and the active region; a second conductivity type semiconductor layer disposed on the active region; and an electron-blocking layer disposed between the active region and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer and the well layer are expressed by a given formula, and an index value representing a band gap of the well layer and an index value representing a band gap of the first conductivity type semiconductor layer a given equation.

The disclosure relates to a light emitting diode and a light emitting device. The light-emitting diode includes an epitaxial structure, a P-type window layer, a transparent conductive layer, and an N-type electrode. The epitaxial structure includes a P-type semiconductor layer, a light emitting layer, and an N-type semiconductor layer stacked in sequence. The P-type window layer is disposed under the P-type semiconductor layer, the transparent conductive layer is disposed under the P-type window layer, and the N-type electrode is disposed on the N-type semiconductor layer, in which a current density of the light-emitting diode is defined as J A/cm.sup.2, a minimum spacing between a projection of the N-type electrode on the N-type semiconductor layer and a projection of the P-type window layer on the N-type semiconductor layer is L m, and a range of L:J is 0.3 to 1.5. The wall-plug-efficiency and quality of the light-emitting diode can be improved.

A light emitting device according to an embodiment of the present disclosure includes: a first electrically-conductive layer (10) that is of a first electrically-conductive type; a first high resistance part (51) that is provided in the first electrically-conductive layer (10) and that includes first atoms; a second electrically-conductive layer (20) that is of a second electrically-conductive type; a second high resistance part (52) that is provided in the second electrically-conductive layer (20) and that includes second atoms; and an active layer (30) that is provided between the first electrically-conductive layer (10) and the second electrically-conductive layer (20). A concentration of the first atoms inside the first high resistance part (51) is greater than a concentration of the first atoms in a first surface (11S1) of the first electrically-conductive layer (10).

A preparation method for a resonant cavity light-emitting diode comprises: forming a first mirror and a first semiconductor layer on a substrate in sequence; forming an active layer on the first semiconductor layer; and forming a second semiconductor layer and a second mirror on the active layer in sequence. The preparation method further comprises: planarizing at least one of a first contact surface between the first semiconductor layer and the first mirror, and a second contact surface between the second semiconductor layer and the second mirror. Since the first contact surface between the first semiconductor layer and the first mirror, and/or the second contact surface between the second semiconductor layer and the second mirror is planarized, the light emission uniformity of the resonant cavity light-emitting diode can be improved.

A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer comprising Al and being provided between the active layer and the p-type semiconductor layer. The electron blocking layer partially includes a high Al composition portion in at least one cross section orthogonal to a stacking direction, the high Al composition portion having an Al composition ratio higher than a surrounding portion.

A nitride semiconductor light-emitting element includes a substrate including a growth surface that is a c-plane having an off angle, an AlN buffer layer comprising AlN and being formed on the growth surface, an n-type semiconductor layer formed on the AlN buffer layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, and a p-type semiconductor layer formed on the active layer. An upper surface of the AlN buffer layer includes a step-and-terrace structure including a plurality of terraces and a plurality of steps connecting between the terraces. An average of heights of the plurality of steps is not more than 7.1 nm. An average of widths of the plurality of terraces is not more than 350 nm.