The present disclosure provides a method of fabricating a solar cell panel in an automated process by applying an adhesive pattern to a support, positioning a solar cell assembly over the pattern, and applying pressure to adhere the assembly to the support.

The invention relates to the photo-voltalic cell structure comprising semiconductor type-p substrate with bottom electric contact upon which the active ZnO film is present, with the transparent conductive layer upon it, preferably ZnO:Al film, with an electric contact, characterized in that the active ZnO layer consists of ZnO nanostructures film at least 50 nm thick, deposited on nucleating layer and covered with ZnO film at least 1 nm thick, and the method to produce the photovoltaic structure.

Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.

A plurality of space vehicles forming a satellite constellation, each space vehicle comprising a housing having a first side and an opposite side, and an axis; a first elongated, rectangular sheet including an array of transducer devices including multijunction solar cells mounted on, and extending from a surface of the first side of the housing, and a second elongated rectangular sheet including an array of transducer devices including multijunction solar cells mounted on and extending from a surface of the second side of the housing in a direction opposite to that of the first elongated rectangular sheet, wherein the selection of the composition of the subcells and their band gap of the multijunction solar cells maximizes the efficiency of the solar cell at the end-of-life EOL in the application of one of (i) a low earth orbit (LEO) satellite that typically experiences radiation equivalent to 510.sup.14 electron fluence per square centimeter (e/cm.sup.2) over a five year EOL, or (ii) a geosynchronous earth orbit (GEO) satellite that typically experiences radiation in the range of 510.sup.14 e/cm.sup.2 to 110.sup.15 e/cm.sup.2 over a fifteen year EOL, with the efficiency of the multijunction solar cells being less at the beginning-of-life (BOL) than the end-of-life (EOL).

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

A method for forming contacts on a photovoltaic device includes forming a heterojunction cell including a substrate, a passivation layer and a doped layer and forming a transparent conductor on the cell. A patterned barrier layer is formed on the transparent conductor and has openings therein wherein the transparent conductor is exposed through the openings in the barrier layer. A conductive contact is grown through the openings in the patterned barrier layer by a selective plating process.

A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.

A solar cell of the invention includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section. On the first principal surface of the photoelectric conversion section, an insulating layer is provided in a first electroconductive layer-non-formed region where the first electroconductive layer is not formed. The insulating layer includes a first insulating layer is in contact with the first electroconductive layer on the first principal surface of the photoelectric conversion section, and a second insulating layer that is formed so as to cover at least a part of the first insulating layer.

A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.