The present disclosure relates to large cell sheets, solar cells, shingled solar modules, and manufacturing method thereof. A top surface of a boundary portion of units of the large cell sheet is divided into a cutting area, top surface bonding areas and top surface electrically-conductive contact areas. The cutting area is configured in a way that the large cell sheet can be cut along the cutting area; the top surface bonding areas and the top surface electrically-conductive contact areas are provided alternately, the cutting area and the top surface electrically-conductive contact areas are formed as an overlapping edge of the solar cell, and after the splitting of the large cell sheet, the top surface electrically-conductive contact areas can directly contact the bottom surface of another solar cell to achieve electrically-conductive connection. The large cell sheet according to the present disclosure can be split conveniently, and the individual solar cells are provided with dedicated bonding areas and electrically-conductive contact areas. Such an arrangement can optimize the production process and use performance of the solar cells.

Provided are a back-contact battery and a manufacturing method thereof, and a photovoltaic module, which includes a silicon substrate with a front surface and a back surface; a first semiconductor layer with a second semiconductor opening region arranged back surface; and a second semiconductor layer. The back-contact battery further includes multiple insulating layers arranged at intervals along an X-axis direction of the back surface, wherein the insulating layers are arranged on the outer surface of the second semiconductor layer. In the X-axis direction, the insulating layer spans a side-surface edge of the second semiconductor opening region with both ends extending, respectively; the insulating layer has a span length W12 on the second semiconductor opening region, and the insulating layer has a span length W11 on the first semiconductor layer, satisfying a condition: W12:W11=0.1-10:1.

Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes a substrate, a tunneling dielectric layer formed on the substrate, a doped conductive layer formed on the tunneling dielectric layer, at least one conductive connection structure, a passivation layer over the doped conductive layer and the at least one conductive connection structure, and a plurality of finger electrodes. The doped conductive layer has a plurality of protrusions arranged along a first direction, each protrusion extends along a second direction perpendicular to the first direction. The at least one conductive connection structure is formed between two adjacent protrusions and connected with sidewalls of the two adjacent protrusions. Each finger electrode of the plurality of finger electrodes extends along the second direction to penetrate the passivation layer and connect to a respective protrusion.

An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

A solar cell having a P-type silicon substrate where one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes. The P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 .Math.cm or less; and a back surface electrode pitch P.sub.rm [mm] of contact areas in which the P-type silicon substrate is in contact with the back surface electrodes and the resistivity R.sub.sub [.Math.cm] of the substrate satisfy the relation represented by the following formula (1).
log(R.sub.sub)log(P.sub.rm)+1.0(1)

A modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell are provided. The modified tunnel oxide layer is SiO.sub.x subjected to plasma surface treatment, and a Si.sup.4+ content in the SiO.sub.x is greater than or equal to above 18%. The density of the interface state subjected to plasma surface treatment decreases, and compared with the silicon oxide layer prepared in the prior arts, boron has a low diffusion rate in the modified silicon oxide layer and hence the damaging effect of the boron on the tunnel oxide layer is reduced effectively, thereby improving the integrity of the silicon oxide layer and maintaining chemical passivation effect. The modified tunnel oxide layer significantly increases the performance indexes of the TOPCon structure.

Embodiments described herein may be related to apparatuses, processes, and techniques directed to a planar germanium photodetector that includes n-type and p-type amorphous silicon deposits on a germanium slab. During operation, a uniform electrical field is formed across the germanium bulk between the amorphous silicon deposits. Other embodiments may be described and/or claimed.

A solar cell is provided, including: a substrate having a first surface including first regions and second regions, a first passivation contact structure formed on the first and second regions, second passivation contact structures formed on the first passivation contact structure, first passivation films formed on the first passivation contact structure, and first electrodes extending in a second direction perpendicular to the first direction. Each second passivation contact structure has an orthographic projection on the first surface in a respective first region, and each first passivation film has an orthographic projection on the first surface in a respective second region. Each first electrode covers a top surface of a respective second passivation contact structure and at least part of two opposing sidewalls of the respective second passivation contact structure in the first direction, and is in electrical contact with the respective second passivation contact structure.

Embodiments of the present disclosure relate to the photovoltaic field, and provide a solar cell and a photovoltaic module. The solar cell includes a substrate, a tunneling dielectric layer formed on the substrate, a doped conductive layer formed on the tunneling dielectric layer, at least one conductive connection structure, a passivation layer over the doped conductive layer and the at least one conductive connection structure, and a plurality of finger electrodes. The doped conductive layer has a plurality of protrusions arranged along a first direction, and each protrusion extends along a second direction perpendicular to the first direction. The at least one conductive connection structure is formed between two adjacent protrusions and connected with sidewalls of the two adjacent protrusions. Each finger electrode of the plurality of finger electrodes extends along the second direction to penetrate the passivation layer and connect to a respective protrusion.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.