Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

The present invention provides a substrate structure, a semiconductor device, and a manufacturing method thereof. The substrate structure comprises: a semiconductor substrate; and a first isolation region, wherein the first isolation region comprises: a first trench extending through the semiconductor substrate; and a first dielectric layer filling the first trench. Due to the isolation region extending through the substrate, it is possible to make device structures on both surfaces of the substrate, so as to increase the utilization of the substrate and the integration degree of the devices.

A method including forming a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein forming ones of the plurality of first interconnects and a plurality of second interconnects includes embedding memory devices therein. An apparatus including a substrate including a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein ones of the plurality of first interconnects and a plurality of second interconnects includes memory devices embedded therein.

A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.

In an embodiment, a method includes forming a device layer over a first substrate; forming a first interconnect structure over a front-side of the device layer; attaching a second substrate to the first interconnect structure; forming a second interconnect structure over a back-side of the device layer, the second interconnect structure comprising back-side memory elements, wherein the back-side memory elements and a first plurality of active devices of the device layer provide a first memory array; and forming conductive connectors over the second interconnect structure.

An integrated circuit includes a first semiconductor substrate having a first surface and a second surface opposite to the first surface, at least one first trench extending into the first semiconductor substrate from the first surface and having a first depth, at least one second trench extending into the first semiconductor substrate from the first surface and having a second depth greater than the first depth, a thinned semiconductor region with a first recessed region extending in the first semiconductor substrate from the second surface and having a first thickness, a second recessed region in the first semiconductor substrate extending from the second surface to the first surface, and a bulk dielectric layer covering the second surface of the first semiconductor substrate.

A method of manufacturing an integrated circuit includes: growing an epitaxial layer on a process surface of a base substrate; forming, by processes applied to an exposed first surface of the epitaxial layer, first transistor cells in the epitaxial layer, each first transistor cell including a first gate electrode; and forming, by processes applied to a surface opposite to the first surface, second transistor cells, each second transistor cell including a second gate electrode.

A semiconductor device includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, a first electrode, a third semiconductor region of the second conductive type, a fourth semiconductor region of the first conductive type, and a conductive portion. The second semiconductor region is provided on the first semiconductor region. The first electrode is provided on the second semiconductor region. The third semiconductor region is provided on the first electrode. The fourth semiconductor region is provided on the third semiconductor region. The conductive portion is surrounded by the third semiconductor region and an intervening insulation portion and is electrically connected to the first electrode.

A semiconductor device, including: a first layer including monocrystalline material and first transistors, the first transistors overlaid by a first isolation layer; a second layer including second transistors and overlaying the first isolation layer, the second transistors including a monocrystalline material; where the second layer includes at least one through layer via to provide connection between at least one of the second transistors and at least one of the first transistors, where the at least one through layer via has a diameter of less than 200 nm; a first set of external connections underlying the first layer to connect the device to external devices; and a second set of external connections overlying the second layer to connect the device to external devices.

A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.