A polymeric piezoelectric film including an optically active helical chiral polymer (A) having a weight average molecular weight of from 50,000 to 1,000,000, wherein: a crystallinity obtained by a DSC method is from 20% to 80%; a standardized molecular orientation MORc measured by a microwave transmission-type molecular orientation meter based on a reference thickness of 50 μm is from 3.5 to 15.0; and in a waveform measured with an inline film thickness meter and representing a relationship between a position in a width direction on the film and a thickness of the film, a number of peaks A is 20 or less per 1,000 mm of a film width, wherein the peaks A have a peak height of 1.5 μm or more and a peak slope of 0.000035 or more.

A method for producing a porous piezoelectric polymer film with a dense surface, includes depositing a polymer solution onto a substrate to form a polymer film including a solvent; evaporating a portion of the solvent to form the dense surface away from the substrate; forming water droplets in interior of the polymer film; and substantially evaporating the water droplets and remaining solvent to form porous interior. A piezoelectric composition includes a piezoelectric material with a porous interior and a dense surface for interfacing with an electrode. A piezoelectric device includes a first electrode; a porous piezoelectric film with a dense surface and porous interior, wherein the porous piezoelectric film is deposited on the first electrode and the dense surface is away from the first electrode; and a second electrode deposited on the dense surface for, together with the first electrode, providing an electrical interface for the porous piezoelectric film.

A piezoelectric device includes a substrate that is flexible and thermally deformable, and a composite piezoelectric body disposed on the substrate. Output in accordance with deformation of the composite piezoelectric body is obtained. The composite piezoelectric body includes a piezoelectric layer containing an organic binder containing piezoelectric particles, a first electrode layer stacked on a first surface side of the piezoelectric layer, and a second electrode stacked on a second surface side of the piezoelectric layer. The substrate is insert molded and integrated with a molded resin body having a curved shape.

In an ultrasonic transducer manufacturing method, an ultrasonic device is mounted on a substrate, and a protective film having an acoustic matching layer thereon is prepared. Then, the protective film having the acoustic matching layer thereon is placed over the ultrasonic device such that the acoustic matching layer is in contact with the ultrasonic device.

A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.

A piezoelectric material contains a main component containing a perovskite-type metal oxide represented by general formula (1), a first sub-component containing Mn, and a second sub-component containing Bi or Bi and Li. A Mn content relative to 100 parts by weight of the metal oxide is 0.500 parts by weight or less (including 0 parts by weight) in terms of metal, a Bi content relative to 100 parts by weight of the metal oxide is 0.042 parts by weight or more and 0.850 parts by weight or less in terms of metal, and a Li content relative to 100 parts by weight of the metal oxide is 0.028 parts by weight or less (including 0 parts by weight) in terms of metal:
(Ba.sub.1−x−yCa.sub.xSn.sub.y).sub.α(Ti.sub.1−zZr.sub.z)O.sub.3 (where 0.020≦x≦0.200, 0.020≦y≦0.200, 0≦z≦0.085, 0.986≦α≦1.100)  General formula (1).

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.

Introduced here are methods and systems to create a relief on an electronic display. In one embodiment, the relief is created by micro-electromechanical systems (MEMS) placed above a cover layer of the electronic display. Each MEMS when activated can protrude or depress, thus creating the relief on the electronic display. In another embodiment, the relief is created by a plurality of resistors placed beneath the cover layer. The cover layer is made out of an elastically deformable material that, when heated, expands, thus creating a protrusion on the electronic display. Each resistor when activated heats a section of the cover layer, causing the cover layer to protrude.