A semiconductor device includes: a first well region in a substrate; at least one isolation region arranged in the substrate and defining an anode area, a cathode area and a bulk area of a Schottky diode device in the first well region; a first dielectric layer over the first well region; and a conductive layer over the first well region, the conductive layer forming a Schottky barrier interface, of the Schottky diode device, with the first well region. The first dielectric layer includes: a first portion including a first thickness; a second portion including a second thickness less than the first thickness and laterally surrounded by the first portion; and a sidewall arranged directly over one of the at least one isolation region and connecting the first portion and the second portion.

The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate. The well region is disposed within the semiconductor substrate. The well region includes a plurality of first regions separated by a plurality of second regions, where the plurality of first regions is of a first doping and the plurality of second regions are of a second doping different than the first doping. A gate electrode overlies the well region where the gate electrode is disposed laterally over a portion of the plurality of first regions and a portion of the plurality of second regions.

A semiconductor device includes a semiconductor substrate including a semiconductor element, a first surface-side electrode disposed on a first surface of the semiconductor substrate, and a second surface-side electrode disposed on a second surface of the semiconductor substrate. The semiconductor substrate includes a gallium nitride substrate and first column regions and second column regions disposed on a first principal surface of the gallium nitride substrate and alternately arranged along a c-axis direction in the first principal surface. The first column regions are formed of a first nitride semiconductor layer and the second column regions are formed of a second nitride semiconductor layer that is higher in band gap than the first nitride semiconductor layer. The semiconductor element is configured to enable a current to flow between the first surface and the second surface of the semiconductor substrate.

In a method of fabricating at least one IC, doped regions are formed on a semiconductor wafer using a first photolithography mask, including at least one doped region of a test structure. Active regions are formed on the semiconductor wafer using a second photolithography mask, including active regions of the test structure. Electrical contacts are formed on the active regions of the test structure. Electrical resistances are measured between pairs of active regions of the test structure using the electrical contacts. At least one metric is determined indicating whether the doped regions are spatially aligned with the active regions based on the measured electrical resistances. In response to the at least one metric indicating the doped regions are spatially aligned with the active regions, completing fabrication of the at least one integrated circuit.

A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate structure of a first gate pitch, a first channel region, and a first source/drain (S/D) feature contacting the first channel region and having a first S/D depth. The second transistor includes a second gate structure of a second gate pitch, a second channel region, and a second S/D feature contacting the second channel region and having a second S/D depth. The semiconductor device also includes a first contact plug overlapping the first S/D feature and having a first width, and a second contact plug overlapping the second S/D feature and having a second width. The first gate pitch is different from the second gate pitch. The first S/D depth is different from the second S/D depth. The second width is larger than the first width.

A transistor includes a first well region doped with second type dopants, a second well region doped with first type dopants, and a third well region. The transistor also includes a first isolation structure neighboring the first well region, a second isolation structure neighboring the the second well region and the third well region, a drain region doped with the first type dopants disposed in the third well region, a source region doped with the first type dopants disposed in the first well region, and a gate disposed at least partially over the second isolation structure. The transistor can be configured as a depletion mode transistor.

A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.

An integrated circuit (IC) device includes a substrate, first and second semiconductor devices correspondingly in different first and second doped regions in the substrate. A gate of the first semiconductor device is electrically coupled to a source/drain of the second semiconductor device. The IC device further includes a first reverse diode electrically coupled between the substrate and a doped well. The doped well is in the first doped region and a source/drain of the first semiconductor device is in the doped well. Alternatively, the doped well is in the second doped region, and the source/drain of the second semiconductor device is in the doped well.

A semiconductor device includes a first well region laterally separated from a second well region in a substrate, a shallow trench isolation (STI) structure laterally between the first well region and the second well region in the substrate, a first implant region of a dopant type opposite to a dopant type of the first well region in the substrate, disposed vertically lower than the STI structure and laterally between the first well region and a lateral center of the STI structure, and a second implant region of a dopant type opposite to a dopant type of the second well region in the substrate, disposed vertically lower than the STI structure and laterally between the second well region and the lateral center of the STI structure.

A semiconductor assembly and a method for manufacturing the same are provided. The semiconductor assembly includes a first substrate, a first well in the first substrate and having a first doping type, a second substrate, a second well in the second substrate and having a second doping type, a first dielectric layer between the first substrate and the second substrate, and a second dielectric layer between the first substrate and the second substrate. The first doping type is different from the second doping type. The second dielectric layer is bonded to the first dielectric layer. The first well overlaps with the second well in a vertical direction.