In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.

A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.

A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

The presently-disclosed subject matter relates generally to GaAs/GaAsSb core-shell nanowire grown on silicon substrate, methods of growing such nanowire, and the use of said nanowires in various applications, including but not limited to photodetection applications.

A field effect transistor including a substrate; a monolayer of a single crystal semiconducting transition metal dichalcogenide (TMD) on the substrate; a source contact and a drain contact to the strained monolayer; and a gate contact on the substrate; wherein the a gate voltage applied to the gate contact with respect to the source contact modulates a ferroelectric response of the monolayer when strained and a current through the monolayer between the source contact and the drain contact; and wherein the substrate is rigid and the monolayer experiences asymmetric lattice expansion when strained against the rigid substrate in response to an external magnetic field or the substrate is a strain engineered substrate inducing asymmetric lattice expansion of the monolayer.

A semiconductor structure for use in single molecule real time DNA sequencing technology is provided. The structure includes a semiconductor substrate including a first region and an adjoining second region. A photodetector is present in the first region and a plurality of semiconductor devices is present in the second region. A contact wire is located on a surface of a dielectric material that surrounds the photodetector and contacts a topmost surface of the photodetector and a portion of one of the semiconductor devices. An interconnect structure is located above the first region and the second region, and a metal layer is located atop the interconnect structure. The metal layer has a zero waveguide module located above the first region of the semiconductor substrate. A DNA polymerase can be present at the bottom of the zero waveguide module.

An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each semiconductor element partially extending into one of the openings and partially outside said opening, the height of each opening being at least 25 nm and at most 5 m and the ratio of the height to the smallest diameter of each opening being at least 0.5 and at most 15.

An organic light emitting diode device can be formed by imprinting a material layer to form an array of non-planar features selected from protrusions and via cavities. The array of non-planar features can be imprinted by moving the material layer under a rolling press or under a rolling die that transfers a pattern thereupon. A layer stack including a transparent electrode layer, an organic light emitting material layer, and a backside electrode layer is formed over the array of non-planar features such that convex sidewalls of the organic light emitting material layer contact concave sidewalls of the backside electrode layer. The layer stack can be encapsulated with a passivation substrate. Additionally or alternatively, an array of convex lenses can be imprinted on a transparent material layer to decrease total internal reflection of an organic light emitting diode device.

A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.