An assembly comprising at least an electrical component mounted on a substrate. The component includes at least a first electrode and a second electrode. The substrate includes at least a first electrical conductor and a second electrical conductor. The first electrode is electrically connected to the first electrical conductor and the second electrode is electrically connected to the second electrical conductor. In a direction perpendicular to the substrate, the first electrode is located between the first electrical conductor and the second electrode. The second electrode is connected to the second electrical conductor by a connecting element extending between the second electrode and the second electrical conductor.

A structure of an integrated crystal oscillator package has a first quartz crystal resonator, a second quartz crystal resonator, and application-specific integrated circuit chip (ASIC) combined in a package. The ASIC has a switch control for receiving audio formats of 44.1 kHz and 48 kHz with different hi-fidelity (hi-fi). The first quartz crystal resonator has a first clock rate corresponding to the 44.1 kHz frequency and the second quartz crystal resonator has a second clock rate corresponding to the 48 kHz frequency to be switched by the present invention in operation.

The invention relates to a piezoceramic sensor in a housing having a layer (3), preferably a PZT layer, made of a piezoelectric material, on both sides of which there is a respective sensor electrode (2), both sensor electrodes (2) being connected in each case to a pole (5, 6). In order that no potential difference, which would allow for the charge to be dissipated by way of the surface, is formed between the housing and the sensor electrodes (2), it is proposed according to the invention that the layer (3) protrudes beyond the sensor electrode (2) on at least one side of the layer (3), and a protective electrode (1) which encompasses the sensor electrode (2) at an insulating distance (7) is arranged on that part of the layer (3) which protrudes beyond the sensor electrode (2).

A piezoelectric element includes a laminate including first and second piezoelectric layers with respective polarization directions in a thickness direction and an elastic layer provided between the first piezoelectric layer and the second piezoelectric layer, first and second terminal electrodes that are provided on an external surface of the laminate, a first detection electrode provided on a positive polar surface of the first piezoelectric layer, a second detection electrode provided on a negative polar surface of the first piezoelectric layer, a third detection electrode provided on a positive polar surface of the second piezoelectric layer, and a fourth detection electrode provided on a negative polar surface of the second piezoelectric layer. The first detection electrode and the fourth detection electrode are connected to the first terminal electrode. The second detection electrode and the third detection electrode are connected to the second terminal electrode.

A fingerprint sensor device includes a sensor substrate, a plurality of sensor circuits over a first surface of the sensor substrate, and a transceiver layer located over the plurality of sensor circuits and the first surface of the sensor substrate. The transceiver layer includes a piezoelectric layer and a transceiver electrode positioned over the piezoelectric layer. The piezoelectric layer and the transceiver electrode are configured to generate one or more ultrasonic waves or to receive one or more ultrasonic waves. The fingerprint sensor device may include a cap coupled to the sensor substrate and a cavity formed between the cap and the sensor substrate. The cavity and the sensor substrate may form an acoustic barrier.

The ultrasound probe includes a piezoelectric element including a piezoelectric composition and an electrode that applies a voltage to the piezoelectric composition. The piezoelectric composition has piezoelectric characteristics expressed by any coordinates included in a region formed by a polyhedron having a plurality of predetermined points as vertexes in Cartesian coordinates (k.sub.eff, ε.sub.33.sup.S, E.sub.c) including variables k.sub.eff, ε.sub.33.sup.S and E.sub.c.

An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.

A piezoelectric transformer that includes a piezoelectric body having driving portions and a power generating portion, an input electrode, and an output electrode. The driving portions and the power generating portion are arranged in the lengthwise direction of the piezoelectric body. The driving portions are disposed symmetrically relative to a plane that passes through a center of the piezoelectric body in the lengthwise direction and is orthogonal to the lengthwise direction, occupy no less than half of the regions in the piezoelectric body, and are include two or more adjacent polarized regions.

A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.

An elastic wave device in which a recess is provided on an upper side of a support, a piezoelectric thin film covers the recess, and an IDT electrode is provided on an upper surface of the piezoelectric thin film. A plate wave of an S0 mode or SH0 mode is used. A plurality of grooves are provided in the upper surface or lower surface of the piezoelectric thin film at a portion of the piezoelectric thin film that is positioned on a hollow section.