A doping method for an array substrate and a manufacturing equipment. The doping method comprises: using a halftone mask to form a photoresist pattern layer on a gate insulation layer of a substrate; wherein, a polysilicon pattern layer is disposed on the substrate; the gate insulation layer covers the polysilicon pattern layer; the photoresist pattern layer corresponding to a heavily doping region forms a hollow portion; the photoresist pattern layer corresponding to a lightly doping region forms a first photoresist portion; the photoresist pattern layer corresponding to an undoped region forms a second photoresist portion; the first photoresist portion is thinner than the second photoresist portion; and performing one doping process to the polysilicon pattern layer such that the heavily doping region and the lightly doping region of the polysilicon pattern layer are formed simultaneously in order to reduce the manufacturing process of an LTPS array substrate.

A laser annealing apparatus includes: a substrate supporting unit which supports a substrate; a laser beam irradiating unit which irradiates a line laser beam extending in a first direction to an amorphous silicon layer provided on the substrate on the substrate supporting unit; a substrate moving unit which moves the substrate supporting unit in a second direction crossing the first direction; and a first beam cutter and a second beam cutter, which are disposed between the substrate supporting unit and the laser beam irradiating unit, where the first and second beam cutters move to increase or decrease a shielded area of the substrate, which is an area of the substrate overlapping the first or second beam cutter and the line laser beam, to shield from at least a portion of the line laser beam irradiated to a portion of the substrate at an outer portion of the amorphous silicon layer.

Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can include: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an excimer laser annealing process on the amorphous silicon layer to form a polysilicon layer; oxidizing partially the polysilicon layer so as to form an oxidation portion at an upper portion of the polysilicon layer; and removing the oxidation portion of the polysilicon layer to form a polysilicon thin film.

A backplane for an electro-optic display comprising pixels with reduced capacitance. The pixel architecture results in a backplane with some voltage spiking, but well-suited for use with electro-optic media having at least a small threshold for switching, for example, electrophoretic media comprising particles.

The present invention provides a method for manufacturing an assembly of a flexible display device and an assembly of a flexible display device manufactured therewith. The method includes: (1) providing a flexible base (22); (2) forming a graphene layer (24) on the flexible base (22); (3) forming a protective layer (26) on the graphene layer (24); (4) forming a low-temperature polysilicon layer (28) on the protective layer (26). The method for manufacturing an assembly of a flexible display device and the assembly of the flexible display device manufactured therewith according to the present invention are such that the graphene layer is formed on the flexible base to effectively conduct out heat generated in the process of forming the low-temperature polysilicon layer so as to protect the flexible base from being affected by the heat without increasing the thickness of the protective layer thereby reducing internal stress and facilitating the realization of thinning.

A method of manufacturing a substrate includes: irradiating, along a first path, a laser beam emitted from a source onto a substrate, wherein the substrate includes a target layer of the laser beam, and wherein the substrate is disposed on a stage; and irradiating, along a second path, a portion the laser beam, which was emitted from the source and reached the target layer, by reflecting the laser beam back onto the target layer using a reflection mirror. An area of a second region of the target layer is greater than an area of a first region of the target layer, wherein the laser beam is irradiated along the second path in the second region, and the laser beam is irradiated along the first path in the first region.

A method of forming an LTPS TFT substrate includes: Step 1: providing a substrate and depositing a buffer layer; Step 2: depositing an a-Si layer; Step 3: depositing and patterning a silicon oxide layer; Step 4: taking the silicon oxide layer as a photomask and annealing the a-Si layer with excimer laser, so that the a-Si layer crystalizes and turns into a poly-Si layer; Step 5: forming a first poly-Si region and a second poly-Si region; Step 6: defining a heavily N-doped area and a lightly N-doped area on the first and second poly-Si regions, and forming an LDD area; Step 7: depositing and patterning a gate insulating layer; Step 8: forming a first gate and a second gate; Step 9: forming via holes; and Step 10: forming a first source/drain and a second source/drain.

The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.

A laser system may include a plurality of laser apparatuses, a beam delivery device configured to bundle pulse laser beams emitted from respective laser apparatuses of the plurality of laser apparatuses to emit a bundled laser beam, and a controller configured to control operated laser apparatuses of the plurality of laser apparatuses such that, at a change in a number representing how many laser apparatuses are operated, a beam parameter of the bundled laser beam emitted from the beam delivery device approaches a beam parameter of the bundled laser beam emitted before the change.

One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.