Disclosed are devices for optical sensing and manufacturing method thereof. In one embodiment, a device for optical sensing includes a substrate, a photodetector and a reflector. The photodetector is disposed in the substrate. The reflector is disposed in the substrate and spaced apart from the photodetector, wherein the reflector has a reflective surface inclined relative to the photodetector that reflects light transmitted thereto to the photodetector.

Gas detecting devices and in particular volatile substance sensors such as breath alcohol devices sensors. The semiconductor gas sensor device includes a laser structure and an optical waveguide resonator formed in a same compound semiconductor which includes at least one optical emission layer and one optical propagation layer. The optical waveguide resonator is formed in the optical propagation layer and is to its greater part separated from the remaining portion of the optical propagation layer. The laser structure is provided adjacent to a portion of the optical waveguide resonator and arranged to transmit electromagnetic radiation at a specific wavelength band to the optical waveguide resonator arranged to resonate at that specific wavelength band.

Various embodiments of the present disclosure are directed towards an optoelectronic device. The device includes a substrate, and a germanium photodiode region extending into an upper surface of the substrate. The germanium photodiode region has a curved upper surface that extends past the upper surface of the substrate. A silicon cap overlies the curved upper surface of the germanium photodiode region. There is an absence of oxide between the curved upper surface of the germanium photodiode region and an upper surface of the silicon cap.

Various embodiments of the present disclosure are directed towards an optoelectronic device. The device includes a substrate, and a germanium photodiode region extending into an upper surface of the substrate. The germanium photodiode region has a curved upper surface that extends past the upper surface of the substrate. A silicon cap overlies the curved upper surface of the germanium photodiode region. There is an absence of oxide between the curved upper surface of the germanium photodiode region and an upper surface of the silicon cap.

The present application relates to an avalanche infrared detector and a preparation method thereof. In the present application, a homogeneous structure is constructed based on an atomic layer number-dependent energy band structure of a two-dimensional van der Waals material, which can solve problems such as lattice mismatch and defects of the traditional heterojunction avalanche photodetectors and can inhibit the generation of main dark current components such as recombination current and tunneling current by detectors. A peak electric field at a stepwise homojunction interface is adopted to enhance a coulomb interaction between carriers, inhibit the hot carrier-phonon coupling, and reduce an energy loss caused by a relaxation process. The avalanche infrared detector provided by the present application can exhibit advantages such as high-speed response, high sensitivity, low avalanche threshold, and high gain under room-temperature working conditions, which expands an application range of the avalanche infrared detector.

A photodiode and a related method of manufacture are disclosed. The photodiode includes a transfer gate and a floating diffusion adjacent to the transfer gate. In addition, the photodiode includes an upper terminal; an intrinsic semiconductor region in contact with the upper terminal, the intrinsic semiconductor region in a trench in a substrate adjacent to the transfer gate; and a lower terminal in contact with the intrinsic semiconductor region. An insulator layer is along an entirety of a sidewall of the intrinsic semiconductor region and between the intrinsic semiconductor region and the transfer gate. A p-type well may also optionally be between the insulator layer and the transfer gate.

A single-photon detection pixel comprises a substrate, a first well provided on the substrate and having a first conductivity type, a plurality of heavily doped regions provided within an upper portion of the first well having a second conductivity type different from the first conductivity type and positioned separately from each other, a plurality of guard rings each surrounding the plurality of heavily doped regions connected to each other and having the second conductivity type, and an isolation region extending along an edge of the first well to surround the plurality of heavily doped regions and the plurality of guard rings and comprising an insulating material.

A multi-level semiconductor device, the device comprising: a first level comprising integrated circuits; a second level comprising at least one electromagnetic wave receiver, wherein said second level is disposed above said first level, wherein said integrated circuits comprise single crystal transistors; and an oxide layer disposed between said first level and said second level, wherein said device comprises at least one read out circuit, wherein said second level is bonded to said oxide layer, and wherein said bonded comprises oxide to oxide bonds.

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a first dopant having a first doping type. A deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type. An isolation structure is disposed within the semiconductor substrate. The isolation structure extends from the back-side surface of the semiconductor substrate to a point below the back-side surface. A doped liner is disposed between the isolation structure and the second doped region. The doped liner comprises the second dopant.

A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.