First and second modulation gates disposed adjacent a silicon photoconversion structure generate, throughout the exposure interval, alternating first and second electrostatic fields that compel photocharge generated within the silicon photoconversion structure to the first and second storage diodes, respectively. Upon conclusion of the exposure interval, accumulated photocharge within the first and second storage diodes is transferred to first and second floating diffusion nodes, respectively, as part of a correlated-double-sampling readout with respect to each of the floating diffusion nodes.

Disclosed is a circular interdigital array plasmon electrode photoelectric detector suitable for non-polarized light. The detector includes a substrate, a semiconductor layer and a circular interdigital array electrode, where rectangular electrodes on left side and right side of the circular interdigital array electrode respectively form a positive electrode and a negative electrode, the positive and negative electrodes are connected to the circular interdigital array electrode through electrode connecting wires, and a circular electrode array and the electrode connecting wires form a circular interdigital array electrode structure. A preparation method for a circular interdigital array plasmon electrode photoelectric detector is also provided. According to the present disclosure, by adjusting inner circle and outer circle radii and the arrangement manner of circular electrodes, the polarization-insensitive effect of the detector for incident light is achieved, and the absorption efficiency for the incident light and the bandwidth of the detector are increased.

An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a first dopant having a first doping type. A deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type. An isolation structure is disposed within the semiconductor substrate. The isolation structure extends from the back-side surface of the semiconductor substrate to a point below the back-side surface. A doped liner is disposed between the isolation structure and the second doped region. The doped liner comprises the second dopant.

A stacked (or vertically arranged) photodetector having at least one contact region on a germanium sensing region. Including the at least one contact on the germanium sensing region reduces the amount of surface area of the germanium sensing region that is interfaced with a substrate (e.g., a silicon substrate) in which the germanium sensing region is included. This reduces the amount of lattice mismatch reduces the amount of misfit defects for the germanium sensing region, which reduces the dark current for the photodetector. The reduced amount of dark current may increase the photosensitivity of the photodetector, may increase low-light performance of the photodetector, and/or may decrease noise and other defects in images and/or light captured by the photodetector, among other examples.

The present invention provides a silicon ultraviolet photodiode and a manufacturing method thereof. The silicon ultraviolet photodiode includes: an N-type region formed beneath and in contact with an upper surface of a silicon substrate; a P+ region formed beneath and in contact with the N-type region; a deep N-well region formed beneath and in contact with the P+ region; and an N-type conductive channel, which is connected to the deep N-well region, and is configured to operably drain a non-ultraviolet current caused by electron-hole pairs formed in the deep N-well region; wherein a depth of the N-type region is controlled to a predetermined depth to enhance an ultraviolet sensitivity by compensating N-type dopant impurities of an N-type implantation region by out-diffused P-type dopant impurities of a P+ implantation region through a thermal process step.

A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.

A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.

Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.