A semiconductor device includes a semiconductor structure including a semiconductor substrate having an active zone with a channel; a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal; and a keep-out zone located a predetermined distance away from the TSV structure and bounded by the active zone. The TSV structure penetrates the semiconductor substrate. The keep-out zone includes a first element area a first distance away from the power TSV, and a second element area a second distance away from the signal TSV.

The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

A solid source-diffused junction is described for fin-based electronics. In one example, a fin is formed on a substrate. A glass of a first dopant type is deposited over the substrate and over a lower portion of the fin. A glass of a second dopant type is deposited over the substrate and the fin. The glass is annealed to drive the dopants into the fin and the substrate. The glass is removed and a first and a second contact are formed over the fin without contacting the lower portion of the fin.

An integrated circuit includes a first transistor having a first source region, a first drain region, a first channel region, a first gate electrode, and a first layer of a first stress-creating material, the first stress-creating material providing a stress that is variable in response to a signal acting on the first stress-creating material, wherein the first layer of the first stress-creating material is arranged to provide a first variable stress in the first channel region of the first transistor, the first variable stress being variable in response to a first signal acting on the first stress-creating material. The integrated circuit also includes a second transistor having a second source region, a second drain region, a second channel region, and a second gate electrode.

A semiconductor device includes a semiconductor structure including a semiconductor substrate having an active zone with a channel; a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal; and a keep-out zone located a predetermined distance away from the TSV structure and bounded by the active zone. The TSV structure penetrates the semiconductor substrate. The keep-out zone includes a first element area a first distance away from the power TSV, and a second element area a second distance away from the signal TSV.

A semiconductor device includes a semiconductor structure including a semiconductor substrate having an active zone with a channel; a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal; and a keep-out zone located a predetermined distance away from the TSV structure and bounded by the active zone. The TSV structure penetrates the semiconductor substrate. The keep-out zone includes a first element area a first distance away from the power TSV, and a second element area a second distance away from the signal TSV.

A pressure-sensitive structure and an electronic device are provided in the present application, in the structure of the pressure-sensitive structure, a first elastic carrier is arranged on a first mounting surface of the substrate, a semiconductor film is arranged on the first elastic carrier. When the substrate is deformed, the first elastic carrier is bent and deformed with a deformation of the substrate, a strain signal is amplified by the substrate, so that the semiconductor film can detect an amount of bending deformation of the substrate, and a signal measurement circuit of the semiconductor film is configured to output a recognizable electric signal. The pressure-sensitive structure is a sensor structure being small in size, being high in precision, and being high in reliability and sensitivity. The pressure-sensitive structure is attached to a panel or a side frame of the electronic device.

A pressure-sensitive structure and an electronic device are provided in the present application, in the structure of the pressure-sensitive structure, a first elastic carrier is arranged on a first mounting surface of the substrate, a semiconductor film is arranged on the first elastic carrier. When the substrate is deformed, the first elastic carrier is bent and deformed with a deformation of the substrate, a strain signal is amplified by the substrate, so that the semiconductor film can detect an amount of bending deformation of the substrate, and a signal measurement circuit of the semiconductor film is configured to output a recognizable electric signal. The pressure-sensitive structure is a sensor structure being small in size, being high in precision, and being high in reliability and sensitivity. The pressure-sensitive structure is attached to a panel or a side frame of the electronic device.

A fast recovery diode may include: a first semiconductor structure including a first layer having a first conductivity type; a first electrode contacting a bottom surface of the first layer; a second semiconductor structure including a second layer having a second conductivity type, the second layer contacting the first semiconductor structure to form a junction; a second electrode of the diode, the second electrode overlying the second semiconductor structure; and a resistive semiconductor region providing a current path between the second electrode and the second semiconductor structure. The resistive semiconductor region may be formed in the second layer with an underlying buried layer defining a current path through the resistive semiconductor region or may be formed of polysilicon with insulating layers defining a current path through the resistive semiconductor region.

A nitride-based bidirectional switching device is provided for working with a battery protection controller having a power input terminal, a discharge over-current protection (DO) terminal, a charge over-current protection (CO) terminal, a voltage monitoring (VM) terminal and a ground terminal. The nitride-based bidirectional switching device comprises a nitride-based bidirectional switching element and an adaption module configured for receiving a DO signal and a CO signal from the battery protection controller and generating a main control signal for controlling the bidirectional switching element. By implementing the adaption circuit, the nitride-based bidirectional switching element can work with conventional battery protection controller for battery charging and discharging management. Therefore, a nitride-based battery management system can be realized with higher operation frequency as well as a more compact size.