Various embodiments of the present disclosure are directed towards an integrated chip including a well region in a substrate and comprising a first dopant type. A dielectric layer is over the well region. A conductive structure is over the dielectric layer. A first doped region and a second doped region are in the substrate and comprise the first dopant type. The conductive structure is spaced laterally between the first and second doped regions. A depletion enhancement region is in the substrate and is below the well region. The depletion enhancement region comprises a second dopant type different from the first dopant type and buts a bottom of the well region.

Semiconductor structures and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a doped region in a substrate and comprising a first-type dopant, a plurality of nanostructures disposed directly over the doped region, a gate structure wrapping around each nanostructure of the plurality of nanostructures, a first epitaxial feature and a second epitaxial feature coupled to the plurality of nanostructures, wherein each of the first epitaxial feature and the second epitaxial feature comprises the first-type dopant, a first insulation feature disposed between the first epitaxial feature and the doped region, and a second insulation feature disposed between the second epitaxial feature and the doped region.

A semiconductor device includes: fin structures on a well region; gate structures on the fin structures and spaced apart from one another; a buffer structure contacting each of the gate structures; at least one terminal on the buffer structure; source/drain (S/D) electrodes on the fin structures, wherein: the S/D electrodes alternate with the gate structures, and the S/D electrodes include two outermost S/D electrodes and at least one S/D electrode between the two outermost S/D electrodes; a first interconnection structure electrically connected to each of the gate structures, wherein: the first interconnection structure is electrically connected to the gate structures through the at least one terminal and the buffer structure; and a second interconnection structure electrically connected to the two outermost S/D electrodes, and being free of a connection to the at least one S/D electrode between the two outermost S/D electrodes.

A semiconductor device includes: fin structures on a well region; gate structures on the fin structures and spaced apart from one another; a buffer structure contacting each of the gate structures; at least one terminal on the buffer structure; source/drain (S/D) electrodes on the fin structures, wherein: the S/D electrodes alternate with the gate structures, and the S/D electrodes include two outermost S/D electrodes and at least one S/D electrode between the two outermost S/D electrodes; a first interconnection structure electrically connected to each of the gate structures, wherein: the first interconnection structure is electrically connected to the gate structures through the at least one terminal and the buffer structure; and a second interconnection structure electrically connected to the two outermost S/D electrodes, and being free of a connection to the at least one S/D electrode between the two outermost S/D electrodes.

The present application relates to a multi-layer ceramic capacitor and a method for producing the same. Internal electrode layers and ceramic dielectric layers are firstly formed, and the internal electrode layers and the ceramic dielectric layers are alternately laminated to form a laminated stack. The internal electrode layers are formed from specific metal particles. Next, a sintering process is performed to the laminated stack to form a laminated ceramic body, and then end electrodes are formed on two ends of the laminated ceramic body, thereby producing the multi-layer ceramic capacitor of the present application with excellent continuity of the internal electrode and better capacitor properties and reliability.

The present application relates to a multi-layer ceramic capacitor and a method for producing the same. Internal electrode layers and ceramic dielectric layers are firstly formed, and the internal electrode layers and the ceramic dielectric layers are alternately laminated to form a laminated stack. The internal electrode layers are formed from specific metal particles. Next, a sintering process is performed to the laminated stack to form a laminated ceramic body, and then end electrodes are formed on two ends of the laminated ceramic body, thereby producing the multi-layer ceramic capacitor of the present application with excellent continuity of the internal electrode and better capacitor properties and reliability.

Structures for a varactor diode and methods of forming same. The structure comprises a first semiconductor layer including a section on a substrate, a second semiconductor layer on the section of the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, and a doped region in the section of the first semiconductor layer. The section of the first semiconductor layer and the doped region have a first conductivity type, and the second semiconductor layer comprises silicon-germanium having a second conductivity type opposite to the first conductivity type, and the third semiconductor layer has the second conductivity type. The doped region contains a higher concentration of a dopant of the first conductivity type than the section of the first semiconductor layer. The second semiconductor layer abuts the first section of the first semiconductor layer along an interface, and the doped region is positioned adjacent to the interface.

Structures for a varactor diode and methods of forming same. The structure comprises a first semiconductor layer including a section on a substrate, a second semiconductor layer on the section of the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, and a doped region in the section of the first semiconductor layer. The section of the first semiconductor layer and the doped region have a first conductivity type, and the second semiconductor layer comprises silicon-germanium having a second conductivity type opposite to the first conductivity type, and the third semiconductor layer has the second conductivity type. The doped region contains a higher concentration of a dopant of the first conductivity type than the section of the first semiconductor layer. The second semiconductor layer abuts the first section of the first semiconductor layer along an interface, and the doped region is positioned adjacent to the interface.

Described herein are switches with asymmetrical anti-series varactor pairs to improve switching performance. The disclosed switches can include asymmetrical varactor pairs to reduce distortions. The asymmetry in the varactor pairs can be associated with geometry of each varactor in the pair. The disclosed switches can stack both symmetrical and asymmetrical varactor pairs. The disclosed switches with asymmetrical anti-series varactor pairs can be configured to improve both H2 and H3 simultaneously.

Described herein are switches with asymmetrical anti-series varactor pairs to improve switching performance. The disclosed switches can include asymmetrical varactor pairs to reduce distortions. The asymmetry in the varactor pairs can be associated with geometry of each varactor in the pair. The disclosed switches can stack both symmetrical and asymmetrical varactor pairs. The disclosed switches with asymmetrical anti-series varactor pairs can be configured to improve both H2 and H3 simultaneously.