A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided in the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array, which is formed in the mesa structure, thereby realizing higher directional light emission, simpler structure and lower cost. Furthermore, the re-growth layer is formed on at least one part of the sidewall of mesa structure, which decreases the non-radiation recombination at the sidewall surface of the mesa structure, improving the light emission efficiency and the image quality.

An optoelectronic device includes at least one optoelectronic light source having an active region for generating light and a light emitting surface for emitting the generated light, an electrically conductive layer extending between the light emitting surface and the active region, and a photonic crystal structure. The photonic crystal structure is arranged in the electrically conductive layer. The at least one optoelectronic light source is a plurality of optoelectronic light sources. The optoelectronic light sources of the plurality of optoelectronic light sources are arranged in an array-like structure. Each of the optoelectronic light sources has an active region which is separate from the active regions of the other optoelectronic light sources. The electrically conductive structure extends over all optoelectronic light sources of the plurality of optoelectronic light sources.

An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.

In an embodiment a method for manufacturing a plurality of optoelectronic semiconductor chips includes providing a growth surface with a plurality of LED areas, which are separated from each other by reflector areas, epitaxial growing epitaxial semiconductor columns on the growth surface, epitaxial coalescing the epitaxial semiconductor columns so that a closed semiconductor surface is formed, epitaxial growing an active semiconductor layer on or over the closed semiconductor surface, wherein the active semiconductor layer is configured to generate electromagnetic radiation and removing the active semiconductor layer over the reflector areas such that a plurality of active semiconductor areas is generated over the LED areas.

In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.

A display apparatus is disclosed. The display apparatus includes a sub-pixel having a light emitting area. The sub-pixel includes a low-reflection layer disposed in the light emitting area. The low-reflection layer includes a first layer and a second layer disposed on the first layer. The second layer contains a low-resistance metal. The first layer includes a metal oxide containing an element M, and the element M includes a group 6B element.

A nano-structure layer is disclosed. The nano-structure layer includes a plurality of nano-photonic structures that are configured in a first configuration such that light incident upon the nanostructured layer below a cut-off angle passes through the nanostructured layer and light incident upon the nanostructured layer above the cut-off angle is reflected back in direction of the incidence.

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.10.7, and a ratio of the third area to the first area is less than 0.2.

A lighting device disclosed in an embodiment of the invention includes: a substrate; a plurality of light emitting devices disposed on the substrate; a first reflective member disposed on the substrate; a resin layer disposed on the first reflective member; a second reflective member disposed on the resin layer; and a wavelength conversion layer disposed on one surface of the resin layer opposite to the light emitting surface of the light emitting device, wherein a distance from the light emitting surface to the one surface may be 5 to 10 times a height of the resin layer.

The invention relates to an optoelectronic component, including the following features: an emitter, which is operated with an electrical input voltage and generates electromagnetic radiation during operation, a plurality of receivers, which form a receiver array, wherein the receiver array converts electromagnetic radiation emitted from the emitter during operation into an electrical output voltage, wherein radiation coupling-in surfaces of the receivers are located on a radiation coupling-out surface of the emitter, and a radiation-influencing element is disposed between the emitter and the receiver array, wherein the radiation-influencing element guides electromagnetic radiation generated by the emitter onto radiation coupling-out surfaces of the receivers.