A solid-state imaging device comprises a plurality of hybrid pixels. The hybrid pixel comprises a photodiode, which has a charge storage region and a photoelectric conversion region, and a transparent electrode. The transparent electrode applies a voltage to the charge storage region to modulate a potential with respect to a charge. Thereby the width of the charge storage region is reduced to form an effective charge storage region. Unless potentially modulated, the hybrid pixel functions as a normal pixel. Upon the potential modulation, the hybrid pixel functions as a phase detection pixel, which selectively stores the charge generated in a part of the photoelectric conversion region.

A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.

An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

A stacked light receiving sensor according to one embodiment includes a first substrate in a first layer, a second substrate joined with the first substrate and formed in a second layer, and a third substrate joined with the second substrate and formed in a third layer. An analog circuit reads a pixel signal from a pixel array. A logic circuit is connected to the analog circuit and outputs the pixel signal. A processing section executes processing based on a neural network computing model, on data based on the pixel signal. The pixel array is disposed on the first layer. The analog circuit is disposed on any one or more of the first to third layers. The logic circuit, the processing section, and a memory are disposed on any one or more of the second and third layers.

An image sensor includes a color filter array, a first photoelectric conversion device configured to absorb first light passing through the color filter array and convert the absorbed first light into electrical signals, and a second photoelectric conversion device configured to absorb second light passing through both the color filter array and the first photoelectric conversion device and convert the absorbed second light into electrical signals. The first photoelectric conversion device includes a first photoelectric conversion layer configured to selectively absorb a mixed light of the first and second colors. The second photoelectric conversion device comprises a second photoelectric conversion layer configured to absorb light including a third color. Each of the first to third colors is one of three primary colors. The image sensor combines the electrical signals converted from the first and second photoelectric conversion devices to obtain electrical signals of the first to third colors.

Novel imaging arrangements are detailed. One comprises an optical array sensor with plural photo-electron generating regions dispersed at two or more layers in the structure. Two of these photo-electron generating regions are vertically separated by at least 10 micronsmaking the sensor useful for sensing objects at focal distances ranging from less than ten inches, out to infinity. Another arrangement involves movement of a camera sensor, in a repetitive tracking/pop-back motion, to reduce motion blur in individual frames of a video sequence. In a further arrangement, a user signals interest in a scene by sweeping a phone camera along a path to a point where it is briefly held, after which the phone is swept back in a contrary direction. The position at which it is briefly held indicates the user's interest in the scene viewed by the camera from that position. A great number of other arrangements are also detailed.

An image sensor includes a first light detecting device configured to selectively sense or absorb first visible light, a second light detecting device configured to selectively sense or absorb second visible light having a longer wavelength region than the first visible light, and a third light detecting device on the first light detecting device and the second light detecting device. The first light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength less than about 440 nm, the second light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength greater than about 630 nm, and the third light detecting device is configured to selectively sense or absorb third visible light having a wavelength region between the first visible light and the second visible light.

A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.