The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1<(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev)/2.

Methods and apparatus for processing a photonic device are provided herein. For example, methods include etching, using a plasma etch process that uses a first gas, a first epitaxial layer of material of the photonic device comprising a base layer comprising at least one of silicon, germanium, sapphire, aluminum indium gallium arsenide (Al.sub.xIn.sub.yGa.sub.1-x-yAs), aluminum indium gallium phosphide (Al.sub.xIn.sub.yGa.sub.1-x-yP), aluminum indium gallium nitride (Al.sub.xIn.sub.yGa.sub.1-x-yN), aluminum indium gallium arsenide phosphide (Al.sub.xIn.sub.yGa.sub.1-x-yAs.sub.zP.sub.1-z), depositing, using a plasma deposition process that uses a second gas different from the first gas, a first dielectric layer over etched sidewalls of the first epitaxial layer of material, etching, using the first gas, a second epitaxial layer of material of the photonic device, and depositing, using the second gas, a second dielectric layer over etched sidewalls of the second epitaxial layer of material.

In an embodiment a device includes a carrier substrate with a first contact region and therefrom electrically insulated a second contact region, a light-emitting component arranged on the carrier substrate and electrically coupled to the first and second contact regions, a reflective encapsulation arranged on the carrier substrate, wherein the reflective encapsulation surrounds the light-emitting component and forms a cavity above a light-emitting surface of the light-emitting component, and a light conversion layer arranged directly on the light-emitting component in the cavity, wherein the light-emitting surface is smaller than a top surface of the light-emitting component, wherein the light conversion layer is substantially congruent with the light-emitting surface, wherein the cavity has a bottom lying in the same plane as the light-emitting surface, and wherein the cavity has side surfaces which are arranged at least partially at a distance from the light conversion layer so that a gap exists between the light conversion layer and the reflective encapsulation.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A light emitting device comprising a germanium first layer; a nucleation layer; a buffer layer comprising a III-V composition; and an active layer. The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.

A light emitting element includes an emission stacked pattern and an insulating film. The emission stack pattern includes a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer. The insulating film surrounds an outer surface of the emission stacked pattern and has a non-uniform thickness.

The present application discloses a semiconductor structure including: a base, the base being made of an amorphous material and including at least one trench; a monocrystalline layer, at least part of the monocrystalline layer being provided in the trench; and an epitaxial structure layer, located on the side of the monocrystalline layer away from the base. The semiconductor structure disclosed in the present application includes the monocrystalline layer formed in the at least one trench of the base, and an amorphous material with a thermal expansion coefficient similar to that of the monocrystalline layer is selected as the base, which can relieve the tensile stress generated by the monocrystalline layer during the epitaxial process. At the same time, the epitaxial structure layer is grown on an independent monocrystalline layer, and the size is small, which alleviates the problem of semiconductor film cracking on the large-size substrate.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.

Example methods, compositions and structures are presented whereby sub-10-nm-thick strain-relieving Si.sub.1-xGe.sub.x layers can be realized by Ge ion implantation, into, and selective oxidation of, Si(111) wafers. The resulting Ge-rich layers are fully strain relaxed via a network of misfit dislocations at the Si/Si.sub.1-xGe, interface, which do not propagate through the Si.sub.1-xGe.sub.x film. The dislocation network has been found to coincide with a periodic variation in the composition at the Si/Si.sub.1-xGe.sub.x interface and is believed to result from the defect-medicated diffusion of Si atoms from the Si substrate through the Si.sub.1-xGe.sub.x layer to the above SiO.sub.2 layer. The epitaxial growth of GaAs on such ultra-thin substrates is demonstrated, presenting a promising approach for solving the long-standing challenge of local, monolithic integration of III-V optoelectronics on the Si platform.

In an embodiment a method for manufacturing a plurality of semiconductor chips includes providing an epitaxial semiconductor layer sequence having a plurality of epitaxial semiconductor layer stacks, the epitaxial semiconductor layer stacks having active regions configured for generating electromagnetic radiation, applying a plurality of logical chips on or over the epitaxial semiconductor layer sequence, the logical chips including at least one integrated circuit configured for controlling the active regions, wherein the logical chips are at least partially provided separately from each other, and wherein the logical chips are CMOS chips, the CMOS chips including at least one p-channel MOSFET and at least one n-channel MOSFET being part of the at least one integrated circuit, and embedding the plurality of logical chips in a mold compound.