An optoelectronic device is manufactured by an epitaxial growth, on each first layer of many first layers spaced apart from each other on a first support, wherein the first is made of a first semiconductor material, of a second layer made of a second semiconductor material. A further epitaxial growth is made on each second layer of a stack of semiconductor layers. Each stack includes a third layer made of a third semiconductor material in physical contact with the second layer. Each stack is then separated from the first layer by removing the second layer using an etching that is selective simultaneously over both the first and third semiconductor materials. Each stack is then transferred onto a second support. Each of the first and third semiconductor materials is one of a III-V compound or a II-VI compound.

The present invention is a method for producing a light emitting device, the method includes the steps of growing an epitaxial layer including at least a light emitting layer having (Al.sub.xGa.sub.1-x).sub.yIn.sub.1-yP (0x<1, 0.4y0.6) as an active layer above a starting substrate, and forming an isolation groove to form a device in the light emitting layer by an ICP dry etching method using inductively coupled plasma, in which a temperature of a substrate including the epitaxial layer at the time of processing to form the isolation groove by the ICP dry etching method is 40 C. or less. Thereby, the method for producing a light emitting device can be provided, in which luminance decrease can be prevented when the light emitting device having a micro-LED size is formed by processing the epitaxial layer having the AlGaInP-based light emitting layer using the ICP dry etching method.

A light emitting element includes a light emitting element core extending in a direction and including first and second semiconductor layers and an element active layer disposed between the first and second semiconductor layers. The light emitting element includes an element electrode layer on the second semiconductor layer of the light emitting element core, and an element insulating film surrounding a side surface of the light emitting element core and a side surface of the element electrode layer. The element electrode layer overlaps the second semiconductor layer in the direction the light emitting element core extends, an area of the element electrode layer in plan view is smaller than an area of the second semiconductor layer in plan view, and the element insulating film completely exposes a surface of the element electrode layer, the surface being opposite to another surface of the element electrode layer facing the second semiconductor layer.

A LED structure includes a first color light-emitting unit, a second color light-emitting unit, a third color light-emitting unit and an optical bonding layer. The first color light-emitting unit and the second color light-emitting unit are located in the same layer and on a light emission side of the third color light-emitting unit. The optical bonding layer is located between the first color light-emitting unit and the third color light-emitting unit and between the second color light-emitting unit and the third color light-emitting unit and is configured to bond the first color light-emitting unit to the third color light-emitting unit and bond the second color light-emitting unit to the third color light-emitting unit. The optical bonding layer is configured to transmit light from the third color light-emitting unit and reflect light from the first color light-emitting unit and the second color light-emitting unit to the light emission side.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly reflective structures for LED chips and related methods are disclosed. Reflective structures include arrangements of a first metal and a second metal within a metal reflective layer. The second metal may have a nonuniform distribution throughout a thickness of the metal reflective layer relative to the first metal. The first metal may promote increased reflectivity relative to the second metal, and the second metal may promote increased mechanical stability, increased adhesion, and reduced electromigration. An exemplary metal reflective layer includes increased concentrations of the second metal near interfaces between the metal reflective layer and other layers of the LED chip. The second metal may also form concentration gradients in directions away from the interfaces. Related methods include sequentially forming discrete layers of the first and second metals, followed by annealing to form the metal reflective layer.

A light emitting element includes an emission stacked pattern and an insulating film. The emission stack pattern includes a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer. The insulating film surrounds an outer surface of the emission stacked pattern and has a non-uniform thickness.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A method for processing an optoelectronic device includes providing a growth substrate having one of a [111], [110] or [100] surface with a (Ga.sub.xAl.sub.1x).sub.yIn.sub.1yP buffer layer located on the growth substrate having a parameter x between 0.2 and 0.8, inclusive, and a parameter y between 0.3 and 0.7, inclusive, and re-growing a doped (Ga.sub.xAl.sub.1x).sub.yIn.sub.1yP layer with a parameter x between 0.4 and 0.6, inclusive, and a parameter y between 0.3 and 0.7, inclusive, on exposed surfaces of an AlInP layer deposited on the buffer layer, the exposed surfaces surrounded by a structured hard mask comprising an amorphous material on non-exposed surfaces of the AlInP layer, wherein edges of the hard mask adjacent to at least one exposed portion of the of a surface of the AlInP layer extend along the [111] B lateral surfaces when the substrate has a [111] surface, or extend along the [110] lateral surfaces when the substrate has a [100] surface, or extend along the [100] lateral surfaces when the substrate has a [110] surface.

A light-emitting diode and a manufacturing method thereof are provided. The light-emitting diode includes a substrate, a reflective mirror layer, an epitaxial composite layer and a plurality of conductive plugs. The reflective mirror layer is disposed on the substrate, and the epitaxial composite layer has a light-emitting layer and a quaternary compound semiconductor layer. The quaternary compound semiconductor layer directly contacts and electrically connects the reflective mirror layer. There is no dielectric material arranged between the quaternary compound semiconductor layer and the reflective mirror layer. The plurality of conductive plugs are alloyed and diffused within the quaternary compound semiconductor layer and do not protrude above the upper surface of the quaternary compound semiconductor layer, and form ohmic contact with the reflective mirror layer.