A contact image sensor having an illumination source; a first SBG array device; a transmission grating; a second SBG array device; a waveguiding layer including a multiplicity of waveguide cores separated by cladding material; an upper clad layer; and a platen. The sensor further includes: an input element for coupling light from the illumination source into the first SBG array; a coupling element for coupling light out of the cores into output optical paths coupled to a detector having at least one photosensitive element.

The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

Implementations of semiconductor packages may include: a substrate coupled to one or more die and to one or more connectors, a glass lid coupled over one or more die by an adhesive and a housing comprising one or more sides and a bottom opening and a top opening. The substrate may be coupled to the housing at the bottom opening and the glass lid may be coupled under the housing at the top opening.

An electronic device may include: a display panel comprising a pixel flexible substrate, a driving circuit, a display medium formed from an organic light-emitting material, and a plurality of shielding units; and a plurality of micro photoelectric units adjacent to a protection layer and away from the display panel. The plurality of micro-photoelectric units may comprise respective micro-photoelectric elements, and at least one of the micro-photoelectric elements may be, or may include, a sensor element. The protection layer may serve to protect the plurality of micro-photoelectric units while being located at one side of the plurality of micro-photoelectric units. Each of the plurality of micro photoelectric units may be configured to emit light toward an object, and to receive the light reflected, scattered, refracted, or diffracted by, or penetrating through, the object, or receive a signal generated from the light after being reflected, scattered, refracted, or diffracted by, or penetrating through, the object.

A texture recognition device and a display apparatus are provided, the texture recognition device has a plurality of pixel units, and includes a base substrate, a driving circuit layer, a first electrode layer and a photosensitive element layer; at least one of the plurality of pixel units includes a pixel driving circuit in the driving circuit layer, a first electrode in the first electrode layer, and a plurality of photosensitive elements spaced apart from each other in the photosensitive element layer, the pixel driving circuit is electrically connected with the first electrode, the plurality of photosensitive elements are on a side of the first electrode away from the base substrate, and are electrically connected to the pixel driving circuit through the first electrode.

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

A chip package included a chip, a first though hole, a laser stop structure, a first isolation layer, a second though hole and a conductive layer. The first though hole is extended from the second surface to the first surface of the chip to expose a conductive pad, and the laser stop structure is disposed on the conductive pad exposed by the first through hole, which an upper surface of the laser stop structure is above the second surface. The first isolation layer covers the second surface and the laser stop structure, and the first isolation layer has a third surface opposite to the second surface. The second though hole is extended from the third surface to the second surface to expose the laser stop structure, and a conductive layer is on the third surface and extended into the second though hole to contact the laser stop structure.

Implementations of semiconductor packages may include: a substrate coupled to one or more die and to one or more connectors, a glass lid coupled over one or more die by an adhesive and a housing comprising one or more sides and a bottom opening and a top opening. The substrate may be coupled to the housing at the bottom opening and the glass lid may be coupled under the housing at the top opening.

In a photoelectric changing unit, a photoelectric conversion unit converts light into electric charge, and an electric charge accumulation unit accumulates the electric charge in a polygonal area whose plurality of sides are adjacent to the photoelectric conversion unit on a light receiving surface. A voltage generation unit accumulates the electric charge and generates a voltage according to an amount of the accumulated electric charge. A first transfer unit transfers the electric charge from the photoelectric conversion unit to the electric charge accumulation unit when an instruction on a transfer to the electric charge accumulation unit is issued. A second transfer unit transfers the electric charge from the electric charge accumulation unit to the voltage generation unit when an instruction on a transfer to the voltage generation unit is issued.

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.