The present disclosure relates to semiconductor structures and, more particularly, to silicon controlled rectifiers and methods of manufacture. The structure includes: a plurality of wells of a first conductivity type; a well of a second conductivity type which is different than the first conductivity type; an intrinsic semiconductor region between the well and the plurality of wells; and contacts within the plurality of wells.

A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.

A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.

Electronic components, more particularly triacs, are provided. An example triac is formed inside and on top of a semiconductor substrate. The triac comprising: on the side of a first surface of the substrate, a first doped region of a first conductivity type and connected to a first conduction terminal; on the side of a second surface of the substrate opposite to the first surface, a second doped region of the first conductivity type and connected to a second conduction terminal; and a gate region connected to a control terminal. The first and second regions respectively have first and second parallel lateral surfaces. Between the first and second parallel lateral surfaces is a separation region not covered by the first and second regions, the separation region shaped as a strip extending along a first direction inside of the gate region and exhibiting an inflection outside of the gate region.

Electronic components, more particularly triacs, are provided. An example triac is formed inside and on top of a semiconductor substrate. The triac comprising: on the side of a first surface of the substrate, a first doped region of a first conductivity type and connected to a first conduction terminal; on the side of a second surface of the substrate opposite to the first surface, a second doped region of the first conductivity type and connected to a second conduction terminal; and a gate region connected to a control terminal. The first and second regions respectively have first and second parallel lateral surfaces. Between the first and second parallel lateral surfaces is a separation region not covered by the first and second regions, the separation region shaped as a strip extending along a first direction inside of the gate region and exhibiting an inflection outside of the gate region.

Bidirectional thyristor device comprising a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, is specified, wherein the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer. The first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the bidirectional thyristor device. The bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element.

Bidirectional thyristor device comprising a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, is specified, wherein the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer. The first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the bidirectional thyristor device. The bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element.

A bidirectional thyristor device (1) comprising a semiconductor body (2) extending between a first main surface (21) and a second main surface (22), is provided wherein a first main electrode (31) and a first gate electrode (41) are arranged on the first main surface and a second main electrode (32) and a second gate electrode (42) are arranged on the second main surface. The first main electrode comprises a plurality of first segments (310) that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments (320) that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface.

A bidirectional thyristor device (1) comprising a semiconductor body (2) extending between a first main surface (21) and a second main surface (22), is provided wherein a first main electrode (31) and a first gate electrode (41) are arranged on the first main surface and a second main electrode (32) and a second gate electrode (42) are arranged on the second main surface. The first main electrode comprises a plurality of first segments (310) that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments (320) that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface.

A bidirectional thyristor capable of improving (dv/dt)c capability includes first and second first-conductivity-type semiconductor layers; first and second second-conductivity-type semiconductor layers; a plurality of carrier emitting portions disposed on a third second-conductivity-type semiconductor layer; a fourth second-conductivity-type semiconductor layer; first and second electrodes; a gate electrode; and a passivation film. The plurality of carrier emitting portions are configured such that an opening is formed in the third second-conductivity-type semiconductor layer and the first first-conductivity-type semiconductor layer is located in the opening. In plan view, the carrier emitting portions are disposed between a position away from the gate electrode by a predetermined distance and an outer edge of the first electrode. The plurality of carrier emitting portions are disposed in contact with the outer edge of the first electrode which is in contact with a passivation film.