Bidirectional thyristor device with asymmetric characteristics

Abstract

Bidirectional thyristor device comprising a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, is specified, wherein the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer. The first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the bidirectional thyristor device. The bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element.

Claims

1. A bidirectional thyristor device comprising a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, and a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, wherein the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer, the first main electrode acts as a cathode for a first thyristor functional element of the bidirectional thyristor device and as an anode for a second thyristor functional element of the bidirectional thyristor device, the first main electrode adjoins at least one first emitter region of the second conductivity type and a plurality of first emitter short regions of the first conductivity type, the second main electrode adjoins at least one second emitter region of the second conductivity type and a plurality of second emitter short regions of the first conductivity type, an arrangement of the plurality of first emitter short regions at the first main surface differs at least in regions from an arrangement of the plurality of second emitter short regions at the second main surface when seen along the vertical direction, so that the bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element, and the bidirectional thyristor device comprises one or more of: (i) a first gate electrode on the first main surface, wherein the first main electrode comprises a plurality of first segments that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode when seen along the vertical direction; and (ii) a second gate electrode on the second main surface, wherein the second main electrode comprises a plurality of second segments that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode when seen along the vertical direction.

2. The bidirectional thyristor device according to claim 1, wherein a local charge carrier recombination lifetime at a p-n junction between the first base layer and the third base layer differs from a local charge carrier recombination lifetime at a p-n junction between the second base layer and the third base layer.

3. The bidirectional thyristor device according to claim 1, wherein at least one first emitter region overlaps with a second emitter short region when seen along the vertical direction.

4. The bidirectional thyristor device according to claim 1, wherein centers of at least some of the first emitter short regions are arranged beside the plurality of the second emitter short regions when seen along the vertical direction.

5. The bidirectional thyristor device according to claim 1, wherein for one of the plurality of first emitter short regions and an associated closest one of the plurality of second emitter short regions when seen along the vertical direction at least one of the following criteria applies: (i) a maximum lateral extent of the first emitter short region differs from a maximum lateral extent of the associated closest second emitter short region; and (ii) a center-to-center distance between the first emitter short region and its closest neighbor of the plurality of first emitter short regions differs from a center-to-center distance between the associated closest second emitter short region and its closest neighbor of the plurality second emitter short regions.

6. The bidirectional thyristor device according to claim 1, wherein a proportion of an area of the first main surface formed by the first emitter short regions differs from a proportion of an area of the second main surface formed by the second emitter short regions.

7. The bidirectional thyristor device according to claim 1, wherein the first thyristor functional element and the second functional element are configured to have different electrical ratings.

8. The bidirectional thyristor device according to claim 1, wherein on only one of the first main surface and the second main surface a gate electrode in form of the first gate electrode or the second gate electrode is provided.

9. The bidirectional thyristor device according to claim 8, wherein one of the first thyristor functional element and the second functional element is configured as a protection device against cosmic rays failure or external faults causing an overload during operation.

Description

(1) In the exemplary embodiments and figures similar or similarly acting constituent parts are provided with the same reference signs. Generally, only the differences with respect to the individual embodiments are described. Unless specified otherwise, the description of a part or aspect in one embodiment applies to a corresponding part or aspect in another embodiment as well.

(2) In the figures:

(3) FIGS. 1A to 1C show an exemplary embodiment of the bidirectional thyristor device in a cross-sectional view (FIG. 1A), in a view onto a first main surface (FIG. 1B), and in a view onto a second main surface (FIG. 1C);

(4) FIG. 2 shows an exemplary embodiment of the bidirectional thyristor device in a cross-sectional view;

(5) FIG. 3 shows an exemplary embodiment of a bidirectional thyristor device in a top view;

(6) FIGS. 4A and 4B show measurement results of the turn-off time tq at a current of 2 kA as a function of the ON state voltage VT at a current of 1.5 kA for samples with different proportions of the main surfaces covered by the emitter short regions and different irradiation doses;

(7) FIGS. 4C and 4D show measurement results of (di/dt).sub.max at a current of 2 kA as a function of the ON state voltage VT at a current of 1.5 kA for samples with different proportions of the main surfaces covered by the emitter short regions and different irradiation doses;

(8) FIG. 4E shows the anode current as a function of the ON state voltage VT for two samples having different sizes of the emitter short regions;

(9) FIGS. 4F and 4G shows the turn-off behavior for the current I and the voltage V as a function of time for a sample having a large distance between emitter short regions (FIG. 4F) and for a sample having a small distance between emitter short regions (FIG. 4G);

(10) FIG. 5A shows a detail of an exemplary embodiment of a bidirectional thyristor device in top view;

(11) FIG. 5B shows a cross-sectional view of the bidirectional thyristor device of FIG. 5A;

(12) FIG. 6 shows measurement results for the charge recovery Qrr as a function of di/dt for samples treated with different irradiation doses.

(13) The elements illustrated in the figures and their size relationships among one another are not necessarily true to scale. Rather, individual elements or layer thicknesses may be represented with an exaggerated size for the sake of better representability and/or for the sake of better understanding.

(14) FIGS. 1A, 1B and 1C illustrates an exemplary embodiment of a bidirectional thyristor device 1. The bidirectional thyristor device 1 comprises a semiconductor body 2 extending between a first main surface 21 and a second main surface 22.

(15) The semiconductor body 2 comprises a first base layer 51 of a first conductivity type, a second base layer 52 of the first conductivity type and a third base layer 53 of a second conductivity type different than the first conductivity type arranged between the first base layer 51 and the second base layer 52 in vertical direction. A first main electrode 31 is arranged on the first main surface 21 and a second main electrode 32 is arranged on the second main surface 22. For instance, the first conductivity type is p-type and the second conductivity type is n-type or vice versa.

(16) The first main electrode 31 acts as a cathode for a first thyristor functional element 11 and as an anode for a second thyristor functional element 12. For the second thyristor functional element 12 the first main electrode 31 acts as an anode via the first emitter short region 71. The first thyristor functional element 11 and the second thyristor functional element 12 are illustrated in FIG. 1A using four thyristor symbols for each thyristor functional element, wherein the thyristor symbols belonging to one functional thyristor element are connected electrically in parallel. The first thyristor functional element 11 and the second thyristor functional element 12 represent two thyristor structures connected in antiparallel and arranged within the same semiconductor body 2.

(17) The bidirectional thyristor device 1 is configured asymmetrically with respect to the first thyristor functional element 11 and the second thyristor functional element 12.

(18) The first main electrode 31 adjoins at least one first emitter region 61 of the second conductivity type and a plurality of first emitter short regions 71 of the first conductivity type.

(19) The second main electrode 32 adjoins at least one second emitter region 62 of the second conductivity type and at a plurality of second emitter short region 72 of the first conductivity type. The first thyristor functional element 11 is formed in this embodiment by the second emitter short region 72 acting as an anode, the second base layer 52, the third base layer 53, the first base layer 51 and the first emitter region 61.

(20) Accordingly, the second thyristor functional element 12 is formed by the first emitter short region 71 acting as an anode, the first base layer 51, the third base layer 53, the second base layer 52 and the second emitter region 62. Consequently, the emitter short regions 71, 72 also fulfil the function of an anode for the associated antiparallel thyristor functional element.

(21) Between the first base layer 51 and the third base layer 53 as well as between the third base layer 53 and the second base layer 52 p-n junctions extending over the entire area of the semiconductor body 2 are formed. Both the first thyristor functional element 11 and the second thyristor functional element 12 may thus use the entire area of these p-n junctions. A high surge current capability close to that of a single thyristor of the same size may be obtained in this manner.

(22) The semiconductor body 2 comprises silicon, for example. However, other semiconductor materials may also be used, for instance SiC (silicon carbide).

(23) The bidirectional thyristor device 1 further comprises a first gate electrode 41 on the first main surface 21 and a second gate electrode 42 on the second main surface 22. A bidirectional thyristor device 1 having two gate electrodes may be turned on with respect to both current directions.

(24) However, one of the first and second gate electrodes 41, 42 may also be dispensed with.

(25) The first gate electrode 41 forms an ohmic contact with the first base layer 51 via a first gate contact region 91 of the semiconductor body 2 adjoining the first main surface 21. The second gate electrode 42 forms an ohmic contact with the second base layer 52 via a second gate contact region 92 of the semiconductor body 2 adjoining the second main surface 22. The first gate contact region 91 and the second gate contact region 92 are of the same conductivity type as the first base layer 51.

(26) In the exemplary embodiment shown an amplifying gate structure 8 is integrated into the first gate electrode 41 and the second gate electrode 42. The amplifying gate structure 8 comprises a section 80 of the first gate electrode 41. For example, the section 80 is formed as a ring extending around a first gate electrode pad 410. The first gate electrode pad 410 is configured as an external contact for the application of an external trigger current to the first gate electrode 41. The section 80 overlaps with a first partial region 81 of the first conductivity type and a second partial region 82 of the second conductivity type. This results in an amplification of current pulses applied to the first gate electrode 41 via the first gate electrode pad 410. In principle, this is a Darlington configuration of two bipolar transistors integrated within a thyristor body.

(27) Likewise, the second gate electrode 42 has an amplifying gate structure 8 with a section 80 extending around the second gate electrode pad 420.

(28) In the exemplary embodiment shown the bidirectional thyristor device 1 is formed asymmetrically by means of different configurations for the first emitter short regions 71 and the second emitter short regions 72. Exemplarily the second emitter short regions 72 are larger than the first emitter short regions 71. The first emitter short region 71 and the second emitter short regions 72 may differ from one another over the entire area of the bidirectional thyristor device 1 or only in one or more partial regions, for example near the first and second gate electrodes 41, 42.

(29) For example, a maximum lateral extent E2 of the second emitter short regions 72 is by at least 10% or at least 20% or at least 50% or at least by a factor of 2 larger than a maximum lateral extent E1 of the first emitter short regions.

(30) A proportion of an area of the first main surface 21 covered by the first emitter short region 71 is thus smaller than a proportion of an area of the second main surface 22 covered by the second emitter short region 72. For example, the proportion is by a factor of at least 1.5 or at least 2 or at least 5 larger on one of the main surfaces than on the other one. Alternatively or in addition, the proportions may differ by at least 5 percentage points or at least 10 percentage points or at least 20 percentage points and/or at most 50 percentage points.

(31) The impact of the proportion of the first and second emitter short regions 71, 72 on the turn-off time is illustrated in FIGS. 4A and 4B. For curve 931 the coverage at the cathode side amounts to 5% and the coverage at the anode side amounts to 30%. For curve 932 the coverage for the cathode side amounts to 30% and at the anode side to 5%. For comparison curve 939 shows the case where the coverage is 30% on both the cathode side and the anode side.

(32) The measurement points on the respective curves represent samples with different proton irradiation doses. As shown in FIG. 4A very short turn-off times tq may be obtained regardless of the proton irradiation dose if the difference between the coverage of the short regions on the cathode side and the anode side is comparably large.

(33) FIG. 4B illustrates that this is not the case if the coverage and the difference between the coverages is smaller. Curve 941 represents a coverage of 5% at the cathode side and 17% at the anode side whereas curve 942 belongs to samples with a coverage of 17% at the cathode side and 5% at the anode side. For comparison curve 949 corresponds to a coverage of 17% on both the cathode side and the anode side.

(34) Consequently different turn-off times may be obtained for the first thyristor functional element 11 and the second thyristor functional 12 element using an asymmetric configuration of the first emitter short regions 71 on the first main surface and the second emitter short regions 72 on the second main surface.

(35) Measurement results for (di/dt).sub.max at a current of 2 kA are illustrated in FIGS. 4C and 4D for the samples described in connection with FIGS. 4A and 4B, respectively.

(36) The curves 951, 952 and 959 of FIG. 4C refer to the same samples as curves 931, 932 and 939 respectively. As illustrated by curves 951 and 952 a high (di/dt).sub.max capability during commutation turn-off is obtained.

(37) The curves 961, 962 and 969 of FIG. 4D refer to the same samples as curves 941, 942 and 949 respectively.

(38) The curves in FIG. 4D illustrate that for smaller coverages and smaller differences an even better (di/dt).sub.max capability may be obtained for the samples of curve 962 compared to sample 969 having the same coverage of 17% both for the cathode side and the anode side. For curve 961 with a coverage of 5% at the cathode side and 17% at the anode side the capability to turn off at high di/dt is reduced compared to the samples 962 having the inverse coverage.

(39) Thus, the dynamic behavior of the bidirectional thyristor device 1 may differ for the first and second thyristor functional element.

(40) FIG. 4E further illustrates that the size of the emitter short regions also has an impact on the anode current. The size of the emitter short regions for curve 971 is larger than that of those for curve 972. For the larger emitter short regions the same anode currents are obtained at a significantly lower on-state voltage VT.

(41) In addition or alternatively an asymmetric behavior may also be obtained by different distances between the first and second emitter short regions 71, 72.

(42) FIGS. 4F and 4G show the turn-off characteristics as a function of time for the current I and the voltage V for emitter short regions having a comparably large distance (FIG. 4F) and for closely spaced emitter short regions (FIG. 4G). In the case of FIG. 4F a voltage commutation does not result in a turn-off of the device. It is merely the current direction that changes.

(43) For the sample shown in FIG. 4G in contrast, the device turns off and there is no significant current flow in negative direction.

(44) Thus, the bidirectional thyristor device 1 may be configured such that the first thyristor functional element 11 and the second thyristor functional element 12 differ from one another with respect to the turn-off capability.

(45) In the exemplary embodiment shown in FIG. 1A, the semiconductor body 2 is a full wafer with a beveled junction termination. However, the semiconductor body 2 may also be a part of a wafer, so that the bidirectional thyristor device 1 is a chip obtained by singulation of a processed wafer into individual devices. In this case, the bidirectional thyristor device 1 may comprise a planar p-n junction termination, for example using guard rings or a variation lateral doping (VLD). At the same time deep p-type sinks may be provided for reverse blocking capability. This also applies for the subsequent exemplary embodiments.

(46) In the exemplary embodiments shown in FIGS. 2 and 3, the first emitter short regions 71 and the second emitter short regions 72 differ from one another with respect to their relative position when seen along the vertical direction.

(47) As shown in FIG. 2, a first emitter short region 71 overlaps with a second emitter region 62. Thus, a length of a direct current path between a first emitter short region 71 and the closest second emitter region 62 is reduced compared to an arrangement where the first emitter short regions 71 and the second emitter short regions 72 have the same lateral position.

(48) As shown in FIG. 3, the centers 710 of the first emitter short regions 71 may be arranged laterally beside the second emitter short regions 72. Likewise the centers 720 of the second emitter short regions 72 may be arranged laterally beside the first emitter short regions 71. The first and second emitter short regions 71, 72 may be arranged such that there is no overlap between them when seen along the vertical direction. The first emitter short regions 71 and the second emitter short regions 72 are arranged in an alternating manner along two directions. In the Figure an angle between the two directions is 90. However, the angle may also differ from 90. For example, an angle between the two directions is between 45 and 90 inclusive.

(49) The exemplary embodiment of a bidirectional thyristor device 1 shown in FIGS. 5A and 5B essentially corresponds to that described in connection with FIGS. 1A to 1C.

(50) In departure therefrom, the first main electrode 31 comprises a plurality of first segments 310 that are spaced apart from one another. At least some of the first segments 310, for instance at least 50%, or at least 90% or all of the first segments are completely surrounded by the first gate electrode 41 in a view onto the first main surface 21.

(51) The first gate electrode 41 comprises a first grid structure 411 connected to a first gate electrode pad 410 (cf. FIG. 1A).

(52) Each of the first segments 310 of the first main electrode 31 adjoin at least one first emitter region 61 of the second conductivity type and at least one first emitter short region 71 of the first conductivity type.

(53) In the exemplary embodiments shown in FIG. 5A the first grid structure 411 comprises a plurality of first cells 4110 of hexagonal shape thereby forming a honeycomb structure. However, other polygonal first cells may also apply for the first grid structure 411, for example tetragons or octagons.

(54) As illustrated in the cross-sectional view of FIG. 5B, a second main electrode 32 and a second gate electrode 42 are arranged on a second main surface 22 of the semiconductor body. Like the first main electrode 31, the second main electrode 32 is split into a plurality of second segments 320. At least some of the second segments 320, for instance at least 50%, or at least 90% or all of the second segments 320 are completely surrounded by the second gate electrode 42 in a view onto the second main surface 22.

(55) Each of the second segments 320 of the second main electrode 32 adjoins at least one second emitter region 62 of the second conductivity type and at least one second emitter short region 72 of the first conductivity type.

(56) During operation of the bidirectional thyristor device 1 the first segments 310 of the first main electrode 31 may be electrically contacted to the same electrical potential, for instance by pressing a conductive plate or conductive wafer against the first main electrode 31. As shown in FIG. 5B, the thickness of the first gate electrode 41 within the first grid structure 411 is smaller than that of the first main electrode 31. Thus, the first grid structure 411 does not form an electrical contact to the plate or wafer. This applies to the second main electrode 32 as well.

(57) The number of first cells 4110 may vary in wide limits depending on the intended application of the bidirectional thyristor device 1, for instance between 10 and 5000. For example, a device with a diameter of 100 mm may comprise several hundred first cells formed by the first grid structure 411.

(58) A view onto the first main surface 21 may correspond to a view onto the second main surface 22. Therefore, views onto the second main surface 22 are not explicitly shown in the Figures. Features and parameters described in connection with the configuration on the first main surface 21, for example in connection with the first main electrode 31, the first gate electrode 41, the first grid structure 411, the first cells 4110, the first emitter region 61 and the first emitter short region 71 may likewise also apply for the corresponding element on the second main surface 22, for example for the second main electrode 32, the second gate electrode 42, the second grid structure 421, the second cells 4210, the second emitter region 62, and the second emitter short region 72, respectively. However, the parameters may also differ between the first main surface 21 and the second main surface 22, so that the bidirectional thyristor device is asymmetric.

(59) A length L1 of one side 4111 of the first cells 4110 is between 500 m and 5000 m or between 900 m and 3000 m inclusive, for instance. The larger the length L1, the larger the contiguous area of the first segments 310 of the first main electrode 31.

(60) A width W1 of one side of at least one of the first cells 4110 is between 100 m and 2000 m inclusive, for instance between 100 m and 500 m. The width of the sides together with their thickness define the cross-section of the first grid structure 411. The thickness of the first grid structure 411 is between 3 m and 30 m inclusive or between 5 m and 12 m inclusive, for instance. For instance, using these parameters the cross-section of the first grid structure 411 is big enough to avoid a significant voltage drop along the gate path from the first gate electrode pad to the outermost areas of the first grid structure 411.

(61) The terms length and width refer to extensions in lateral direction. Thicknesses refer to the extent in vertical direction, i.e. perpendicular to the first main surface.

(62) A maximum lateral extent E1 of the first emitter short regions 71 is between 50 m and 1000 m or between 100 m and 500 m inclusive, for instance.

(63) An edge-to-edge distance D1 between two emitter short regions 71 within the same first cell is between 200 m and 1000 m inclusive or between 300 m and 500 m inclusive, for instance. The distance between the emitter short regions may be chosen appropriately to provide sufficiently high dV/dt.

(64) An edge-to-edge distance D2 between the first grid structure 411 and the first emitter short region arranged closest to the first grid structure is between 50 m and 400 m or between 100 m and 200 m inclusive, for instance.

(65) The above parameters may take into account design rules that do not apply for existing device concepts. For instance this is because the emitter short regions on the cathode side of one thyristor functional element act as anode regions for the antiparallel thyristor functional element at the same time.

(66) Differing from FIG. 5A, for instance, first emitter short regions 71 arranged within one first cell may also have different values for the maximum lateral extent. For example the emitter short regions arranged closer to the edge of the first segments may be smaller than the maximum lateral extent of a first emitter short region arranged closer to the center of the respective first segment.

(67) Alternatively or in addition, the first emitter short region 71 in the center may be replaced by several smaller first emitter short regions 71.

(68) For example, first emitter short regions 71 arranged close to the edge of the first cell may have a diameter between 100 m and 250 m inclusive wherein first emitter short region 71 arranged closer to the center of the cell may have a diameter between 150 m and 500 m inclusive.

(69) In the example shown in FIG. 5B, each first segment 310 overlaps with a plurality of first emitter short regions 71 wherein one first emitter short region 71 is arranged in the center of the first segment 310, whereas the further first emitter short regions 71 are arranged along the circumference of the first segments 310. However, a single emitter short region 71 may also be sufficient.

(70) The described device structure provides a high di/dt capability due to the massively increased interface area between the gate electrodes and the main electrodes on the first and second main surfaces. Compared to conventional devices, short turn-on times after application of a gate current pulse may be obtained.

(71) In conventional devices, the distance of a short region from a main electrode edge is kept low since it is inversely proportional to the dV/dt capability. This reduces the di/dt capability. In contrast, high values for dV/dt and di/dt may be obtained at the same time for the described bidirectional thyristor device 1, for example due to the massively increased gate-cathode area.

(72) In the exemplary embodiment shown in FIG. 5B the size and the position of the first emitter short region 71 and the second emitter short regions 72 is the same for the first main surface 21 and the second main surface 22.

(73) An asymmetric behavior of the bidirectional thyristor device 1 with respect to the first thyristor functional element 11 and the second thyristor functional element 12 may be obtained by configuring the semiconductor body 2 such that the turn-off times of the first and second thyristor functional element differ from one another.

(74) This may be obtained by subjecting the regions of the semiconductor body 2 at a p-n junction between the first base layer 51 and the third base layer 53 to different irradiation doses than a region at a p-n junction between the second base layer 52 and the third base layer 53.

(75) The impact of the irradiation doses is illustrated in FIG. 6 showing curves 981, 982 and 983 belonging to three samples being treated with different irradiation doses. For each curve the value for (di/dt).sub.crit representing the critical value for these samples is illustrated.

(76) Above this critical value there is no turn-off during voltage commutation. Above this critical value the device operates without physical destruction and when di/dt gets back below the critical value (di/dt).sub.crit in some of the next AC voltage waves, the turn-off capability recovers provided that the device was not overheated. FIG. 6 illustrates that the value for (di/dt).sub.crit can be adjusted by the irradiation doses during the fabrication of the device. Consequently different values may be obtained for the first thyristor functional element 11 and the second thyristor functional element 12.

(77) Devices irradiated with a lower irradiation dose further show a lower voltage drop in the ON-state reflected in lower electrical losses. If for example one of the thyristor functional elements operates in a circuit with a lower commutation di/dt due to a higher inductance in series, this thyristor functional element may require a lower irradiation dose and may be less lossy in the ON-state. The ON-state voltage VT drop also reflects in the magnitude of the surge current I.sub.TSM. The lower the value for VT, the higher the magnitude of I.sub.TSM.

(78) Thus, one of thyristor functional elements may work as a crowbar failing at comparably low surge currents, whereas the other thyristor functional element acts as a bypass that is capable of withstanding high surge currents.

(79) Different irradiation doses may also be applied for the devices described in connection with the previous exemplary embodiments.

(80) Alternatively or in addition to different charge carrier recombination lifetimes, the bidirectional thyristor device of the exemplary embodiment shown in FIGS. 5A and 5B may be configured asymmetrically by changing the arrangement of the first emitter short region 71 and the second emitter short region 72 as described in the previous exemplary embodiments.

(81) Furthermore, as in the previous exemplary embodiments, one of the first and second gate electrodes 41, 42 may be omitted.

(82) Various combinations of the above ways to obtain an asymmetric behavior of the bidirectional thyristor device may be used to obtain different thyristor functional elements integrated in one semiconductor body.

(83) The invention described herein is not restricted by the description given with reference to the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the claims, even if this feature or this combination is not itself explicitly indicated in the claims or exemplary embodiments.

LIST OF REFERENCE SIGNS

(84) 1 thyristor device 11 first thyristor functional element 12 second thyristor functional element 2 semiconductor body 21 first main surface 22 second main surface 31 first main electrode 310 first segments 32 second main electrode 320 second segments 41 first gate electrode 410 first gate electrode pad 411 first grid structure 4110 first cells 4111 side 42 second gate electrode 420 second gate electrode pad 421 second grid structure 4210 second cells 51 first base layer 52 second base layer 53 third base layer 61 first emitter region 62 second emitter region 71 first emitter short region 710 center of first emitter short region 72 second emitter short region 720 center of second emitter short region 8 amplifying gate structure 80 section 81 first partial region (first conductivity type) 82 second partial region (second conductivity type) 91 first gate contact region 92 second gate contact region 931, 932, 939 curve 941, 942, 949 curve 951, 952, 959 curve 961, 962, 969 curve 971, 972 curve 981, 982, 983 curve L1 length of side W1 width of side (covered by first/second gate electrode) E1 maximum lateral extent of first emitter short region E2 maximum lateral extent of second emitter short region D1 edge-to-edge distance D2 edge-to-edge distance